Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP100N06S2L05AKSA1

Part No.:
IPP100N06S2L05AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP100N06S2L05AKSA1.pdf
Description:
MOSFET N-CH 55V 100A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,745

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP100N06S2L05AKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 100 A continuous drain current at TC = 25 °C, 55 V VDS, and ultra-low 4.4 mΩ RDS(on) at VGS = 10 V, with AEC-Q101 qualification and 175 °C operation-used in DC-DC converter primary-side switches and motor phase-leg drivers.

For engineers reviewing the IPP100N06S2L05AKSA1 datasheet, IPP100N06S2L05AKSA1 pinout, IPP100N06S2L05AKSA1 application, or IPP100N06S2L05AKSA1 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, avalanche energy rating (810 mJ), thermal resistance (RthJC = 0.5 K/W), diode reverse recovery performance (trr = 65–80 ns), and TO-220-3 package mechanical compatibility.

Technical Context

This OptiMOS® device employs trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching and robust avalanche capability. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from 3.3 V/5 V controllers, and its 100% avalanche-tested design supports unclamped inductive switching in motor control and power supply topologies.

The integrated body diode exhibits low forward voltage (VSD = 0.9–1.3 V at IF = 80 A) and controlled reverse recovery (Qrr = 125–160 nC), reducing switching losses and EMI in synchronous rectification and half-bridge configurations. Thermal design leverages a low RthJC of 0.5 K/W for efficient heat transfer to heatsinks.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 60 V transient clamping.
RDS(on) max @ VGS=10 V4.4 mΩ - Enables ≤0.44 W conduction loss at 100 A, critical for high-efficiency 1–3 kW power stages.
ID continuous @ TC=25 °C100 A - Sustained current handling with bondwire-limited rating; requires heatsink mounting per RthJC.
EAS single pulse810 mJ - Confirmed avalanche ruggedness for reliable operation during load dump or short-circuit events.
trr & Qrr65–80 ns / 125–160 nC - Fast, soft-recovery diode reduces voltage overshoot and snubber requirements in bridge circuits.
RthJC0.5 K/W - Direct junction-to-case thermal path enables compact thermal design with standard TO-220 heatsinks.
VGS(th)1.2–2.0 V - Logic-compatible gate threshold ensures full enhancement with 3.3 V microcontroller outputs.

Pinout & Package

IPP100N06S2L05AKSA1 is housed in a PG-TO220-3-1 package (standard through-hole TO-220AB variant), with drain-connected tab for direct heatsink mounting and insulated backside per JEDEC TO-220 standards.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or low-side switch node in half-bridge.
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring <25 nC total charge for full turn-on at 10 V.
Pin 3 (Drain)Power output / high-side connectionInternally bonded to metal tab; electrically connected to heatsink-requires isolation washer if heatsink is grounded.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood applications including engine control units and battery disconnect modules.
175 °C operating temperatureEnables deployment in high-ambient environments such as EV traction inverters and industrial motor drives without derating.
Ultra-low RDS(on) at 4.5 V5.6 mΩ (SMD version) - supports efficient operation with 5 V gate drivers and eliminates need for level-shifting circuitry.
100% avalanche testedGuarantees single-pulse ruggedness up to 810 mJ, eliminating need for external snubbers in inductive load switching.
Green package (lead-free)Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 reflow profile (260 °C peak).

Applications

Automotive DC-DC ConvertersIndustrial Motor Drives

Use Scenario: Primary-side switch in 12 V → 48 V bidirectional DC-DC converters for 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, high-frequency (100–300 kHz) synchronous buck/boost switch with low RDS(on) and fast diode recovery.

Use Value: Reduces conduction loss by >30% vs. legacy 6.5 mΩ MOSFETs, enabling >96% peak efficiency at 3 kW output.

Use Scenario: Phase-leg switch in 3-phase 230 V AC-fed servo drives for CNC machinery.

IC Role / Device Role / Timing Role: Low-loss, avalanche-rugged power stage element operating at 8–16 kHz PWM with regenerative braking.

Use Value: Withstands repeated unclamped inductive switching during emergency stop, eliminating external freewheeling diodes.

Onboard Battery ChargersUPS Inverters

Use Scenario: Isolated LLC resonant converter primary switch in 6.6 kW EV onboard chargers.

IC Role / Device Role / Timing Role: High-voltage, high-current switch rated for 55 V blocking and 100 A RMS current in ZVS topology.

Use Value: Low Coss (1330 pF) and Qgd/Qgs ratio enable clean zero-voltage switching across wide load range.

Use Scenario: Half-bridge output stage in line-interactive UPS delivering 1–3 kVA sine-wave output.

IC Role / Device Role / Timing Role: High-reliability power switch supporting 175 °C ambient and frequent overload conditions.

Use Value: Extended thermal margin allows sustained 120% overload for 30 s without thermal shutdown, meeting UL 1778 hold-time requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB100N06S2L05Same die, PG-TO263-3-2 surface-mount package; RthJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO-220.Preferred for automated SMT assembly and space-constrained board layouts; requires thermal pad layout.Select when volume production favors reflow assembly and PCB real estate is constrained.
IRFB7546PBFHigher RDS(on) (5.2 mΩ), lower ID (90 A), no AEC-Q101 qualification; TO-220 package.Suitable for industrial non-automotive use only; lacks automotive reliability validation and extended temperature support.Choose only for cost-sensitive non-automotive designs where 175 °C operation and AEC-Q101 are not required.

Compared with IPB100N06S2L05 and IRFB7546PBF, IPP100N06S2L05AKSA1 uniquely combines AEC-Q101 qualification, 175 °C operation, and 4.4 mΩ RDS(on) in a through-hole TO-220 package-making it optimal for prototyping, service replacement, and low-volume automotive subsystems requiring manual assembly and field-replaceable heatsinking.

Availability

IPP100N06S2L05AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and onboard battery chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPP100N06S2L05AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS® 60 V product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive electrification and industrial automation systems.

FAQ

Is IPP100N06S2L05AKSA1 pin-compatible with IPB100N06S2L05?

No-IPP100N06S2L05AKSA1 uses a PG-TO220-3-1 package with through-hole leads, while IPB100N06S2L05 uses PG-TO263-3-2 (D²PAK) surface-mount packaging. Pin numbering and mechanical footprint differ; PCB layout and assembly process are not interchangeable.

What is the maximum safe operating temperature for continuous operation?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature. At Tj = 175 °C, RDS(on) increases to ~7.2 mΩ (typical), and derating of ID is required per the SOA curve on page 4 of the datasheet-maximum continuous current drops to ~65 A at TC = 100 °C.

Does this MOSFET require a gate resistor for driving with a microcontroller?

Yes-a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current. With Qg = 170–230 nC and typical MCU GPIO drive strength (~20 mA), direct connection risks oscillation and excessive shoot-through during switching transitions.

Can IPP100N06S2L05AKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (see Figure 9) enables inherent current sharing. For stable paralleling, match devices from same wafer lot, use symmetrical PCB layout with Kelvin source connections, and ensure identical gate drive loop inductance per device.

IPP100N06S2L05AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5660 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP100N06S2L05AKSA1 FAQ

1.How can I place an order for IPP100N06S2L05AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N06S2L05AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N06S2L05AKSA1 reliable?

The price and inventory of IPP100N06S2L05AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N06S2L05AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP100N06S2L05AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N06S2L05AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N06S2L05AKSA1?

IPP100N06S2L05AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N06S2L05AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N06S2L05AKSA1?

For technical support, including IPP100N06S2L05AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N06S2L05AKSA1 requirements.

6.How does Aetrix verify that IPP100N06S2L05AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP100N06S2L05AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N06S2L05AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP100N06S2L05AKSA1?

All IPP100N06S2L05AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N06S2L05AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N06S2L05AKSA1 part is unused and in its original packaging.

Return procedure for IPP100N06S2L05AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP100N06S2L05AKSA1 Tags

  • IPP100N06S2L05AKSA1
  • IPP100N06S2L05AKSA1 PDF
  • IPP100N06S2L05AKSA1 Datasheet
  • IPP100N06S2L05AKSA1 Specifications
  • IPP100N06S2L05AKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPP100N06S2L05AKSA1
  • Buy IPP100N06S2L05AKSA1
  • IPP100N06S2L05AKSA1 Price
  • IPP100N06S2L05AKSA1 Distributor
  • IPP100N06S2L05AKSA1 Supplier
  • IPP100N06S2L05AKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER