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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP100N06S3L-03

Name: IPP100N06S3L-03
Brand: Infineon Technologies
SKU: IPP100N06S3L-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP100N06S3L-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP100N06S3L-03.pdf

Description:: MOSFET N-CH 55V 100A TO220-3

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Product details

Overview

IPP100N06S3L-03 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.7 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPP100N06S3L-03 datasheet, IPP100N06S3L-03 pinout, IPP100N06S3L-03 application, or IPP100N06S3L-03 equivalent, key selection criteria include R_DS(on) temperature stability, single-pulse avalanche energy (2390 mJ), gate charge profile (Q_g = 368–550 nC), and thermal resistance (R_thJC = 0.5 K/W) for thermal design validation.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.2 V) enables robust TTL/CMOS-level drive compatibility, and its 3140 pF Crss supports controlled dV/dt in hard-switched topologies.

The integrated body diode features low forward voltage (0.6–1.3 V at 80 A) and 140 ns reverse recovery time, enabling efficient synchronous rectification and freewheeling in half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 48 V nominal battery systems with 20 % overvoltage margin
R_DS(on) max	2.7 mΩ at V_GS = 10 V - enables ≤2.7 W conduction loss at 100 A, critical for thermally constrained modules
I_D cont.	100 A at T_C = 25 °C - validated continuous current rating under heatsink-cooled conditions
E_AS	2390 mJ - single-pulse avalanche energy at I_D = 50 A, supporting inductive load turn-off safety
Q_g	368–550 nC - total gate charge defining driver strength requirement and switching loss trade-off
R_thJC	0.5 K/W - junction-to-case thermal resistance enabling direct heatsink mounting with predictable ΔT
t_r/t_f	70 ns / 77 ns - rise/fall times at V_DD = 27.5 V, I_D = 80 A, R_G = 1.3 Ω, defining hard-switching speed limit

Pinout & Package

Package: PG-TO220-3-1 - through-hole, isolated tab, standard TO-220 footprint with drain-connected metal tab for direct thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nC drive per switching event
Pin 3 (Drain)	Power output	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100 % avalanche tested	Each unit subjected to single-pulse inductive switching stress, ensuring ruggedness in motor drive fault conditions
175 °C operating temperature	Enables placement in high-ambient zones (e.g., near inverters or under-hood ECUs) without derating
Green product (RoHS)	Lead-free termination and halogen-free molding compound compliant with EU Directive 2011/65/EU
OptiMOS™-T2 trench architecture	Reduces R_DS(on) × Q_g figure-of-merit by >25 % vs. prior generation, improving efficiency in 100–200 kHz SMPS

Applications

Onboard Charger (OBC) Primary Switch

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-efficiency bidirectional power conversion between traction battery and 48 V auxiliary bus in PHEVs.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology operating at 100–150 kHz.

Use Value: 2.7 mΩ R_DS(on) minimizes conduction loss at 100 A peak, while 2390 mJ E_AS ensures safe turn-off during short-circuit events.

Use Scenario: Step-down conversion from 400 V traction battery to regulated 48 V rail for e-turbo and ADAS actuators.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter.

Use Value: Low V_SD (0.6–1.3 V) and 140 ns t_rr reduce body-diode conduction loss and reverse recovery ringing, improving light-load efficiency.

Electric Power Steering (EPS) Inverter

Commercial Vehicle HVAC Blower Drive

Use Scenario: Three-phase inverter supplying brushless motor in rack-assisted EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module with PWM frequency up to 20 kHz.

Use Value: 175 °C T_j rating allows operation in sealed EPS housings; MSL1 reflow compatibility supports automated assembly.

Use Scenario: High-current PWM fan driver in refrigerated transport units with ambient temperatures up to 70 °C.

IC Role / Device Role / Timing Role: Single-ended switch controlling brushed DC blower motor via H-bridge half-bridge configuration.

Use Value: 400 A pulsed drain current rating accommodates 3× inrush surge; RoHS compliance meets EU vehicle recycling mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N06S3H-03	R_DS(on) max = 3.0 mΩ (V_GS = 10 V); higher gate charge (Q_g = 420–620 nC)	Slightly lower efficiency at high frequency due to increased switching loss	Select when cost sensitivity outweighs 0.3 mΩ R_DS(on) penalty and layout space permits larger gate driver
IPB100N06S3L-03	Same die, PG-TO263-3-2 surface-mount package; identical R_DS(on), E_AS, and thermal specs	Requires PCB pad design for thermal vias and large copper pour; not suitable for through-hole legacy designs	Select for automated SMT production where board space and thermal management via PCB are prioritized over mechanical serviceability

Compared with IPP100N06S3L-03, the H-variant trades marginal R_DS(on) increase for cost reduction, while the IPB variant delivers identical electrical performance in a surface-mount form factor - choice depends strictly on assembly method and thermal interface constraints.

Availability

IPP100N06S3L-03 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for IPP100N06S3L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low R_DS(on) and robust avalanche capability.

FAQ

Is IPP100N06S3L-03 pin-compatible with older OptiMOS generations?

No. While sharing the PG-TO220-3-1 outline, this part uses updated trench cell layout and gate oxide process. Pinout matches mechanically but R_DS(on), Q_g, and V_GS(th) differ significantly - redesign verification is required before substitution.

What is the maximum recommended gate resistor for 100 kHz switching?

Based on Q_g = 450 nC (typ.) and 10 V gate drive swing, a 10 Ω gate resistor limits peak current to ~1 A and yields ~4.5 µs turn-on delay - acceptable for 100 kHz operation with 50 % duty cycle and adequate Miller immunity.

Does the device require a negative gate turn-off voltage?

No. The gate threshold voltage range (1.2–2.2 V) and ±16 V absolute maximum rating allow reliable turn-off with 0 V gate drive. Negative bias is unnecessary unless system-level noise immunity demands extra margin beyond the 1.2 V minimum V_GS(th).

Can IPP100N06S3L-03 replace IRLB8743 in a 48 V telecom PSU?

Not directly. Though both are TO-220 N-MOSFETs, IRLB8743 has 3.2 mΩ R_DS(on) and 100 V rating. IPP100N06S3L-03's 55 V rating and 2.7 mΩ R_DS(on) improve conduction loss but reduce overvoltage headroom - system transient analysis is mandatory before replacement.

IPP100N06S3L-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 550 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 26240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP100N06S3L-03 FAQ

1.How can I place an order for IPP100N06S3L-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N06S3L-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N06S3L-03 reliable?

The price and inventory of IPP100N06S3L-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N06S3L-03 is usually 5 days.

3.What payment methods are accepted for IPP100N06S3L-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N06S3L-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N06S3L-03?

IPP100N06S3L-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N06S3L-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N06S3L-03?

For technical support, including IPP100N06S3L-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N06S3L-03 requirements.

6.How does Aetrix verify that IPP100N06S3L-03 is sourced from the original manufacturer or authorized distributors?

All IPP100N06S3L-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N06S3L-03 meets industry standards.

7.What is the process for return or replacement of IPP100N06S3L-03?

All IPP100N06S3L-03 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N06S3L-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N06S3L-03 part is unused and in its original packaging.

Return procedure for IPP100N06S3L-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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