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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP100N06S3L-04

Name: IPP100N06S3L-04
Brand: Infineon Technologies
SKU: IPP100N06S3L-04
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP100N06S3L-04

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP100N06S3L-04.pdf

Description:: MOSFET N-CH 55V 100A TO220-3

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Product details

Overview

IPP100N06S3L-04 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 3.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, 100 A continuous drain current at T_C = 100 °C, and qualified to AEC-Q101. It serves as a high-current main switch in 12 V automotive power distribution modules.

For engineers reviewing the IPP100N06S3L-04 datasheet, IPP100N06S3L-04 pinout, IPP100N06S3L-04 application, or IPP100N06S3L-04 equivalent, key selection criteria include R_DS(on) at 100 °C junction, single-pulse avalanche energy (1090 mJ), thermal resistance (R_thJC = 0.7 K/W), and gate charge profile (Q_g = 241–362 nC) for PWM-driven DC-DC and motor control stages.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust drive with standard 5 V logic-level controllers, while its 175 °C maximum operating temperature supports under-hood deployment without derating.

The MOSFET integrates a co-packaged body diode with 0.6–1.3 V forward voltage at 80 A and 95 ns reverse recovery time, enabling synchronous rectification and freewheeling in high-frequency buck converters and H-bridge motor drivers where diode conduction loss and switching noise must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) max	3.5 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements in compact power modules.
I_D continuous	100 A @ T_C = 100 °C - Sustains full-rated current in engine bay environments without active cooling.
E_AS	1090 mJ @ I_D = 50 A - Withstands repetitive inductive turn-off stress in solenoid and relay drivers without failure.
Q_g	241–362 nC - Defines gate drive power requirement and switching speed trade-off in 20–100 kHz PWM applications.
R_thJC	0.7 K/W - Enables direct thermal coupling to heatsink for efficient junction-to-case heat transfer in TO-220 mounting.
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs, minimizing risk of partial enhancement.

Pinout & Package

Package: PG-TO220-3-1 - Through-hole plastic package with isolated tab (drain-connected), rated for 214 W power dissipation at T_C = 25 °C and compliant with MSL1 reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt for overcurrent protection.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; driven via gate resistor to control dV/dt and EMI.
Pin 3 (Drain)	Power output	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at rated I_AS = 100 A, ensuring robustness in inductive load switching.
Green product (RoHS)	Lead-free termination and halogen-free molding compound compliant with EU Directive 2011/65/EU and IPC-1752.
OptiMOS™-T2 trench architecture	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, improving efficiency in high-frequency SMPS.
175 °C operation	Enables placement near hot components (e.g., exhaust manifolds, inverters) without thermal shutdown or lifetime degradation.

Applications

Automotive Power Distribution

Engine Control Unit (ECU) Load Switching

Use Scenario: High-side power switch for battery-fed lighting, HVAC actuators, and fuel pump circuits in modern vehicle architectures.

IC Role / Device Role / Timing Role: Main power FET controlling 12 V supply path with fast turn-on (<30 ns delay) and low R_DS(on) to minimize voltage drop during cranking.

Use Value: Eliminates need for external current-limiting resistors and reduces thermal margin requirements due to 0.7 K/W R_thJC.

Use Scenario: Low-side driver for solenoid valves and injector coils in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch handling 100 A pulsed loads with 95 ns t_rr body diode for snubberless operation.

Use Value: Supports 10 kHz PWM frequency without excessive switching loss, enabling precise fuel metering control.

DC-DC Converter Primary Switch

Industrial Motor Starter Module

Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V buck converters powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier replacement with integrated body diode and 2.8–3.5 mΩ R_DS(on) at 100 °C.

Use Value: Achieves >94% conversion efficiency at 50 A load, reducing board-level heat generation and enabling smaller magnetics.

Use Scenario: Solid-state replacement for mechanical contactors in 3 kW industrial fans and pumps.

IC Role / Device Role / Timing Role: High-current, thermally stable main switch rated for continuous 100 A at ambient up to 85 °C with no forced air.

Use Value: Extends service life beyond 100,000 cycles by eliminating arcing wear and contact bounce inherent in electromechanical relays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N5F6	R_DS(on) = 3.8 mΩ @ 10 V, lower Q_g (190 nC), non-AEC-Q101 rated	Not qualified for automotive safety-critical systems; suitable for industrial motor drives only	Select when cost sensitivity outweighs automotive qualification and thermal margin is ample
IRFB7546PBF	R_DS(on) = 3.2 mΩ @ 10 V, higher E_AS (1200 mJ), legacy HEXFET® process	Larger R_thJC (0.9 K/W); requires larger heatsink footprint for same power dissipation	Prefer when legacy design reuse or second-source availability is prioritized over latest thermal performance

Compared with STP100N5F6 and IRFB7546PBF, IPP100N06S3L-04 delivers superior thermal resistance (0.7 K/W), guaranteed AEC-Q101 compliance, and tighter V_GS(th) distribution-making it optimal for space-constrained, safety-relevant automotive power stages where reliability and junction temperature control are critical.

Availability

IPP100N06S3L-04 is available at Aetrix Electronics and suitable for automotive power distribution modules, engine control units, and industrial motor starter designs requiring stable component supply across multi-year production lifecycles.

Supply support for IPP100N06S3L-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive systems-including start-stop, ADAS, and electrified powertrain applications.

FAQ

What is the maximum allowable gate-source voltage for IPP100N06S3L-04?

The absolute maximum gate-source voltage is ±16 V, as specified in the datasheet's "Maximum ratings" table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +10 V for enhancement and –5 V for fast turn-off, consistent with Infineon's recommended driving conditions.

Can IPP100N06S3L-04 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) ensures inherent current sharing between paralleled devices. However, matched gate drive layout, symmetrical PCB routing, and individual gate resistors are required to prevent oscillation and ensure balanced dynamic current distribution during switching transitions.

Is the body diode suitable for continuous freewheeling in a buck converter?

Yes-the integrated body diode is rated for 100 A continuous forward current and exhibits 0.6–1.3 V V_SD at 80 A and 25 °C. Its 95 ns t_rr and 135 nC Q_rr enable efficient freewheeling up to 100 kHz, though synchronous rectification with an external FET is recommended for highest efficiency above 50 kHz.

Does IPP100N06S3L-04 require a heatsink in typical automotive applications?

Yes-a heatsink is mandatory for continuous operation above ~25 A at ambient temperatures >60 °C. With R_thJC = 0.7 K/W and R_thCA ≈ 62 K/W (leaded), even modest power dissipation (e.g., 5 W) raises junction temperature significantly; a 10–20 cm² aluminum heatsink reduces total thermal resistance to ~15 K/W, enabling full 100 A rating at T_C = 100 °C.

IPP100N06S3L-04 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 362 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 17270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP100N06S3L-04 FAQ

1.How can I place an order for IPP100N06S3L-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N06S3L-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N06S3L-04 reliable?

The price and inventory of IPP100N06S3L-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N06S3L-04 is usually 5 days.

3.What payment methods are accepted for IPP100N06S3L-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N06S3L-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N06S3L-04?

IPP100N06S3L-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N06S3L-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N06S3L-04?

For technical support, including IPP100N06S3L-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N06S3L-04 requirements.

6.How does Aetrix verify that IPP100N06S3L-04 is sourced from the original manufacturer or authorized distributors?

All IPP100N06S3L-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N06S3L-04 meets industry standards.

7.What is the process for return or replacement of IPP100N06S3L-04?

All IPP100N06S3L-04 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N06S3L-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N06S3L-04 part is unused and in its original packaging.

Return procedure for IPP100N06S3L-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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