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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP100N06S3L-04IN

Name: IPP100N06S3L-04IN
Brand: Infineon Technologies
SKU: IPP100N06S3L-04IN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP100N06S3L-04IN

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPP100N06S3L-04IN.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP100N06S3L-04 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 3.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, 100 A continuous drain current at T_C = 25 °C, and qualified to AEC-Q101 with 175 °C operating temperature - used in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPP100N06S3L-04 datasheet, IPP100N06S3L-04 pinout, IPP100N06S3L-04 application, or IPP100N06S3L-04 equivalent, key selection criteria include R_DS(on) at 10 V drive, single-pulse avalanche energy (1090 mJ), thermal resistance (R_thJC = 0.7 K/W), diode forward voltage (0.9 V typ. at 80 A), and gate charge profile (Q_g = 241–362 nC).

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The MOSFET features fully characterized dynamic parameters including C_iss = 17270 pF, C_oss = 2165 pF, and Crss = 2070 pF at V_DS = 25 V, with turn-on delay (30 ns), rise time (58 ns), turn-off delay (82 ns), and fall time (55 ns) measured under standardized 10 V gate drive and 80 A load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage compatible with 48 V nominal battery systems and transient overvoltage tolerance up to ISO 7637-2 Pulse 5a.
R_DS(on) max	3.5 mΩ at V_GS = 10 V, I_D = 80 A - enables <1.5 W conduction loss at 80 A, critical for thermally constrained power stages.
I_D continuous	100 A at T_C = 25 °C - supported by bondwire-limited current rating and 0.7 K/W junction-to-case thermal resistance.
E_AS	1090 mJ (single pulse, I_D = 50 A) - ensures reliable operation during inductive load switching without external snubbers.
Q_g	241–362 nC - defines gate driver power requirement and influences switching speed trade-off between loss and EMI.
V_SD	0.9 V typ. at I_F = 80 A, T_j = 25 °C - low body diode forward drop reduces freewheeling loss in high-duty-cycle applications.
t_rr	95 ns - fast reverse recovery minimizes cross-conduction risk and commutation loss in bridge configurations.

Pinout & Package

IPP100N06S3L-04 is housed in a PG-TO220-3-1 package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. Thermal performance relies on mechanical mounting of the tab to heatsink via M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path with minimal inductance.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nC total charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications with extended temperature cycling and humidity testing.
100% avalanche tested	Each unit subjected to single-pulse avalanche stress per JEDEC JESD24-11, ensuring ruggedness in inductive switching.
Green product (RoHS)	Lead-free termination and halogen-free molding compound compliant with EU Directive 2011/65/EU.
MSL1 reflow rating	Rated for peak solder reflow temperatures up to 260 °C, supporting automated SMT assembly despite TO-220 form factor.
175 °C operation	Extended junction temperature range enables use in under-hood environments without derating at ambient >125 °C.

Applications

Engine Control Unit (ECU) High-Side Driver

12 V Automotive DC-DC Converter Primary Switch

Use Scenario: Driving solenoid valves and fuel injectors in gasoline direct injection systems with PWM duty cycles up to 95%.

IC Role / Device Role / Timing Role: High-side power switch controlling 12 V battery-fed loads with precise timing and current limiting via external sense resistor.

Use Value: Low R_DS(on) reduces heat generation in compact ECU enclosures; 100 A rating supports peak injector currents up to 80 A.

Use Scenario: Primary-side switching element in 12 V to 5 V/3.3 V buck converters powering ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: Synchronous rectifier-compatible MOSFET operating at 200–500 kHz with controlled dV/dt to minimize EMI.

Use Value: Fast t_rr (95 ns) and low Q_gd/Q_g ratio enable efficient hard-switching with reduced shoot-through risk.

Electric Power Steering (EPS) Motor Phase Leg

Start-Stop System Battery Disconnect Switch

Use Scenario: Half-bridge leg in three-phase inverter driving 12 V brushless EPS motors with regenerative braking capability.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current flow during PWM-controlled torque generation and energy recovery.

Use Value: Integrated body diode with 0.9 V V_SD and 400 A pulsed rating sustains high-frequency freewheeling without external diodes.

Use Scenario: Main isolation switch disconnecting starter battery from vehicle electrical network during engine cranking or fault conditions.

IC Role / Device Role / Timing Role: Normally-open power switch activated only during defined system states, requiring ultra-low leakage and high reliability.

Use Value: I_DSS ≤ 1 µA at 25 °C and ≤ 100 µA at 125 °C ensures negligible standby drain; 1090 mJ E_AS withstands load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP100N06S3H-04	R_DS(on) max = 3.0 mΩ at V_GS = 10 V; same package and AEC-Q101 rating; higher gate charge (Q_g = 270–400 nC)	Better conduction efficiency but slower switching; preferred where thermal margin is tighter than EMI constraints	Select when minimizing I²R loss dominates over switching loss, e.g., low-frequency (<100 kHz) high-current inverters
IPB100N06S3L-04	Identical electrical specs and qualification; differs only in PG-TO263-3-2 surface-mount package with exposed drain pad	Requires PCB layout redesign for SMD thermal management; unsuitable for through-hole legacy designs	Choose for new SMT-based platforms needing automated assembly and improved thermal interface to copper planes

Compared with IPP100N06S3L-04, the H-version trades higher gate charge for lower R_DS(on), while the IPB variant replaces through-hole mounting with SMD thermal optimization - both retain identical automotive qualification and safe operating area, enabling platform-specific packaging flexibility without circuit redesign.

Availability

IPP100N06S3L-04 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and start-stop battery management requiring stable component supply across automotive production lifecycles.

Supply support for IPP100N06S3L-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

Is IPP100N06S3L-04 suitable for synchronous rectification?

Yes. Its low R_DS(on) (3.5 mΩ max), fast body diode (t_rr = 95 ns, Q_rr = 135 nC), and gate plateau voltage (3.8 V) enable effective gate-driven synchronous rectification in buck and LLC topologies. The device supports gate control down to 4.5 V, allowing compatibility with standard 5 V logic drivers.

What is the maximum allowable gate-source voltage?

The absolute maximum gate-source voltage is ±16 V, per datasheet specification. Operation beyond ±12 V is not recommended for long-term reliability; typical gate drive uses 10 V for full enhancement and 0 V or –5 V for turn-off. Gate oxide integrity is validated at +16 V and –5 V per AEC-Q101 stress testing.

Does this MOSFET require a gate resistor for stability?

Yes. A gate resistor (typically 10–47 Ω) is required to dampen ringing caused by gate loop inductance and Miller capacitance interaction. The datasheet specifies t_d(on), t_r, t_d(off), and t_f using R_G = 2 Ω; increasing R_G slows switching to reduce EMI but increases switching loss proportionally.

Can IPP100N06S3L-04 replace older OptiMOS®-T1 devices in existing designs?

Yes, with verification. It shares identical pinout, voltage rating, and thermal footprint with IPP100N06S1L-04, but offers lower R_DS(on) (3.5 mΩ vs. 4.5 mΩ) and improved avalanche ruggedness (1090 mJ vs. 920 mJ). Layout changes are unnecessary, though gate drive strength should be confirmed due to higher Q_g.

IPP100N06S3L-04IN Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPP100N06S3L-04IN FAQ

1.How can I place an order for IPP100N06S3L-04IN through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N06S3L-04IN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N06S3L-04IN reliable?

The price and inventory of IPP100N06S3L-04IN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N06S3L-04IN is usually 5 days.

3.What payment methods are accepted for IPP100N06S3L-04IN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N06S3L-04IN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N06S3L-04IN?

IPP100N06S3L-04IN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N06S3L-04IN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N06S3L-04IN?

For technical support, including IPP100N06S3L-04IN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N06S3L-04IN requirements.

6.How does Aetrix verify that IPP100N06S3L-04IN is sourced from the original manufacturer or authorized distributors?

All IPP100N06S3L-04IN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N06S3L-04IN meets industry standards.

7.What is the process for return or replacement of IPP100N06S3L-04IN?

All IPP100N06S3L-04IN units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N06S3L-04IN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N06S3L-04IN part is unused and in its original packaging.

Return procedure for IPP100N06S3L-04IN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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