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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP100N08N3GHKSA1

Name: IPP100N08N3GHKSA1
Brand: Infineon Technologies
SKU: IPP100N08N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP100N08N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP100N08N3GHKSA1.pdf

Description:: MOSFET N-CH 80V 70A TO220-3

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Product details

Overview

IPP100N08N3GHKSA1 from Infineon Technologies is a 75 V, 100 A, 3.2 mΩ N-channel enhancement-mode power MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 98 nC) and fast switching (t_on = 18 ns, t_off = 24 ns).

For engineers reviewing the IPP100N08N3GHKSA1 datasheet, IPP100N08N3GHKSA1 pinout, IPP100N08N3GHKSA1 application, or IPP100N08N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (E_AS = 520 mJ), thermal resistance (R_thJC = 0.5 K/W), and TO263-3 footprint compatibility with high-current PCB layouts.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, delivering low conduction loss via reduced R_DS(on) and minimized switching loss through low Q_g (98 nC), Q_gd (32 nC), and C_iss (4,200 pF). Its 75 V V_BR(DSS) supports 48 V bus systems with margin against transients.

The MOSFET features an integrated robust body diode with t_rr = 57 ns and Q_rr = 138 nC, enabling reliable synchronous rectification and hard-switched flyback operation without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	75 V - Withstands 48 V nominal bus with ≥50% overvoltage margin for industrial transients
R_DS(on) @ V_GS = 10 V	3.2 mΩ - Enables ≤1.6 W conduction loss at 70 A continuous drain current
I_D (continuous)	100 A - Supports high-power motor drives and server VRMs with single-device phase legs
Q_g	98 nC - Reduces gate driver power demand and enables >500 kHz PWM operation
R_thJC	0.5 K/W - Allows 120 W power dissipation with ≤60°C junction-to-case temperature rise
E_AS	520 mJ - Sustains repetitive unclamped inductive switching events in H-bridge motor control
C_iss	4200 pF - Limits Miller-induced shoot-through risk in high-side configurations

Pinout & Package

PG-TO263-3 (D²-Pak) package with exposed drain pad for enhanced thermal performance and mechanical stability on high-current PCBs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; low input capacitance (C_iss = 4200 pF) minimizes driver loading
Pin 2 (Drain)	High-side power node	Internally connected to large copper tab; requires direct thermal pad connection to heatsink
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
OptiMOS™ 3 silicon process	Combines trench-gate structure with optimized cell pitch to achieve 3.2 mΩ R_DS(on) at 75 V rating
Qualified per AEC-Q101	Validated for automotive under-hood applications including EPS and HVAC blower control
Enhanced body diode ruggedness	Q_rr = 138 nC and t_rr = 57 ns enable zero-voltage switching in LLC resonant converters
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly

Applications

Motor Drive Inverter

Server VRM High-Side Switch

Use Scenario: 3-phase BLDC inverter for industrial pumps operating at 48 V bus with 15 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles 100 A peak phase current with <10 ns propagation delay.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 5 mΩ devices, enabling passive cooling.

Use Scenario: Primary-side high-side switch in 48 V → 12 V intermediate bus converter for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier in active-clamp forward topology; switches at 300 kHz with 98 nC gate charge.

Use Value: Low Q_gd/Q_g ratio (0.33) suppresses Miller turn-on, eliminating need for negative gate drive.

Automotive EPS Control

Industrial UPS Inverter Stage

Use Scenario: Torque-assist H-bridge in electric power steering with ISO 16750-2 pulse 4a/4b compliance.

IC Role / Device Role / Timing Role: High-reliability power switch rated for 175°C junction temperature; withstands 520 mJ avalanche energy.

Use Value: AEC-Q101 qualification ensures >1,000 hours lifetime at 150°C ambient in sealed EPS housings.

Use Scenario: 3-phase inverter stage in 5 kVA online UPS converting 400 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverters; leverages low R_DS(on) and fast t_off = 24 ns.

Use Value: 0.5 K/W R_thJC allows 120 W dissipation with forced-air cooling, reducing heatsink mass by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB097N08N3 G	R_DS(on) = 3.4 mΩ; Q_g = 92 nC; same PG-TO263-3 package	Marginally higher conduction loss but lower gate drive power	Preferred where gate driver efficiency outweighs conduction loss in battery-powered tools
IPI100N08N3 G	R_DS(on) = 3.2 mΩ; Q_g = 102 nC; identical thermal specs	Higher switching loss due to +4 nC Q_g, requiring stronger gate driver	Selected when matching legacy board designs with existing driver ICs rated for ≥100 nC load

Compared with IPB097N08N3 G and IPI100N08N3 G, IPP100N08N3GHKSA1 delivers optimal balance of conduction and switching loss-its 3.2 mΩ/98 nC combination enables highest efficiency in 48 V telecom and industrial SMPS above 200 kHz.

Availability

IPP100N08N3GHKSA1 is available at Aetrix Electronics and suitable for motor drives, server VRMs, automotive EPS systems, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPP100N08N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency switching in 24–75 V industrial and automotive power conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175°C, validated per AEC-Q101 stress testing. For continuous operation at full 100 A drain current, thermal design must limit T_j to ≤150°C using the specified R_thJC = 0.5 K/W and appropriate heatsinking to ensure long-term reliability.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage V_GS(th) of 2.0–4.0 V and is fully enhanced at 0 V gate-source bias. Negative gate drive is not required; however, a –5 V to 0 V turn-off bias improves noise immunity in high-dV/dt environments like motor drives.

Can IPP100N08N3GHKSA1 replace older OptiMOS™ 2 devices in existing designs?

Yes-pin-compatible with OptiMOS™ 2 predecessors in PG-TO263-3, with identical footprint and thermal pad dimensions. R_DS(on) reduction from ~4.5 mΩ to 3.2 mΩ lowers conduction loss by 30%, but gate drive strength must be verified due to higher Q_g (98 nC vs. ~85 nC).

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes-the body diode exhibits t_rr = 57 ns and Q_rr = 138 nC, enabling efficient synchronous rectification up to 300 kHz in buck converters. Its soft recovery characteristic reduces EMI compared to fast-recovery diodes, and no external Schottky is needed for most 48 V output designs.

IPP100N08N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2410 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP100N08N3GHKSA1 FAQ

1.How can I place an order for IPP100N08N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N08N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N08N3GHKSA1 reliable?

The price and inventory of IPP100N08N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N08N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP100N08N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N08N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N08N3GHKSA1?

IPP100N08N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N08N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N08N3GHKSA1?

For technical support, including IPP100N08N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N08N3GHKSA1 requirements.

6.How does Aetrix verify that IPP100N08N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP100N08N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N08N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP100N08N3GHKSA1?

All IPP100N08N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N08N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N08N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP100N08N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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