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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP100N08S207AKSA1

Name: IPP100N08S207AKSA1
Brand: Infineon Technologies
SKU: IPP100N08S207AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP100N08S207AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP100N08S207AKSA1.pdf

Description:: MOSFET N-CH 75V 100A TO220-3

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Product details

Overview

IPP100N08S207AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 75 V V_DS, 100 A continuous drain current at T_C = 25 °C, and ultra-low 5.8–7.1 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C, is AEC-Q101 qualified, and is used in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPP100N08S207AKSA1 datasheet, IPP100N08S207AKSA1 pinout, IPP100N08S207AKSA1 application, or IPP100N08S207AKSA1 equivalent, key selection criteria include its 0.5 K/W junction-to-case thermal resistance, 100% avalanche-tested ruggedness (E_AS = 810 mJ), gate charge profile (Q_g = 144–200 nC), and SMD-compatible thermal performance on minimal PCB footprint.

Technical Context

This OptiMOS® power transistor uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching dynamics. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with standard 10 V logic-level controllers, and its reverse diode exhibits low V_SD (0.9–1.3 V) and controlled Q_rr (290–360 nC) for synchronous rectification.

The device's SOA is defined up to 100 V and 100 A with pulse width-dependent thermal impedance, and its dynamic parameters-including C_iss = 4700 pF, C_oss = 1260 pF, and t_r/t_f = 51/30 ns-are optimized for hard-switched 48 V automotive power stages operating below 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage compatible with 48 V nominal battery systems with transient margin
R_DS(on) max	7.1 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for thermally constrained engine bay layouts
I_D continuous	100 A at T_C = 25 °C - Supports peak load currents in starter-alternator and electric coolant pump drivers
E_AS	810 mJ - Confirmed single-pulse avalanche energy allows safe operation during inductive turn-off transients without snubbers
Q_g	144–200 nC - Determines gate driver power requirement and switching loss trade-off in PWM-controlled H-bridges
R_thJC	0.5 K/W - Enables direct heatsink mounting for efficient thermal path in TO-220-based power modules
T_j max	175 °C - Rated for under-hood environments including turbocharger proximity and exhaust manifold adjacency

Pinout & Package

IPP100N08S207AKSA1 is housed in a PG-TO220-3-1 package with isolated tab (drain-connected), standard through-hole mounting, and lead-free green finish compliant with RoHS and AEC-Q101. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Low-side return path; connects to ground or current-sense shunt for closed-loop control
Pin 2 (Gate)	Control electrode	Receives 10 V logic-level drive; requires ≥2.2 Ω series gate resistor to damp ringing per layout parasitics
Pin 3 (Drain)	High-side power node	Connected to heatsink via isolated tab; carries full load current and must be routed with minimum loop inductance

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including engine control units and transmission solenoid drivers
100% avalanche tested	Each unit passes single-pulse E_AS stress test-eliminates need for external clamping in inductive load switching
Ultra-low R_DS(on)	5.8 mΩ typical at 10 V gate drive reduces conduction loss by >30% vs. legacy 8 mΩ devices in 48 V systems
MSL1 reflow rating	Suitable for lead-free assembly up to 260 °C peak-compatible with standard SMT reflow profiles despite through-hole form factor
Integrated body diode	V_SD = 0.9–1.3 V at 80 A enables freewheeling in half-bridge topologies without discrete diode addition

Applications

Engine Control Unit (ECU) Power Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current switching for fuel injector and ignition coil drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Low-side switch controlling inductive loads with precise PWM timing and fast turn-off to limit back-EMF stress.

Use Value: 810 mJ avalanche rating eliminates need for TVS clamps; 175 °C rating ensures reliability near hot engine blocks.

Use Scenario: Primary-side synchronous rectifier in bidirectional buck-boost converters linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 20–50 kHz with low R_DS(on) minimizing conduction loss during high-current phases.

Use Value: 5.8 mΩ R_DS(on) reduces thermal load by ~2.5 W vs. 8 mΩ alternatives at 80 A, enabling smaller heatsinks in space-constrained modules.

Electric Coolant Pump Driver

Start-Stop System Solenoid Actuator

Use Scenario: PWM-controlled motor driver for variable-speed electric coolant pumps in modern thermal management systems.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch delivering up to 100 A peak with tight thermal management.

Use Value: 0.5 K/W R_thJC supports direct heatsink mounting; 100 A rating handles cold-start surge currents without derating.

Use Scenario: High-reliability solenoid actuation in start-stop systems requiring repeated engagement under battery voltage sag.

IC Role / Device Role / Timing Role: Robust power switch driving inductive solenoids with controlled turn-on/turn-off to prevent contact arcing.

Use Value: AEC-Q101 qualification and 175 °C operation ensure longevity across 15+ year vehicle lifetimes in under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB100N08S207AKSA1	PG-TO263-3-2 package, lower R_DS(on) (5.5–6.8 mΩ), higher thermal resistance to ambient (R_thJA = 40 K/W on 6 cm² PCB)	Better suited for surface-mount designs with limited board area but adequate copper cooling	Select when SMD assembly and PCB-level thermal management are prioritized over mechanical mounting flexibility
IPI100N08S207AKSA1	PG-TO262-3-1 package, identical R_DS(on) and avalanche rating, same pinout as IPP100N08S207AKSA1 but non-isolated tab	Requires insulated mounting hardware due to tab-drain connection; preferred for cost-sensitive through-hole production	Select when mechanical robustness and ease of manual rework outweigh isolation requirements in chassis-grounded systems

Compared with IPB100N08S207AKSA1 and IPI100N08S207AKSA1, IPP100N08S207AKSA1 offers isolated-tab safety for floating heatsink mounting, making it optimal for isolated power domains in engine control modules where ground separation is mandatory.

Availability

IPP100N08S207AKSA1 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid converters, and electric coolant pump drivers requiring stable component supply across extended product lifecycles.

Supply support for IPP100N08S207AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS® 2nd generation power MOSFET family, engineered specifically for high-current, high-temperature automotive power switching applications demanding ruggedness, efficiency, and long-term reliability.

FAQ

What is the maximum gate-source voltage rating for IPP100N08S207AKSA1?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per the datasheet. Exceeding this range risks permanent gate oxide damage. For reliable operation, gate drive should be clamped within ±15 V, and transient spikes must be suppressed using Zener diodes or active gate clamp circuits.

Does IPP100N08S207AKSA1 require a heatsink in typical automotive applications?

Yes - even at 100 A continuous current, junction temperature rise exceeds safe limits without heatsinking. With R_thJC = 0.5 K/W and P_tot = 300 W at T_C = 25 °C, a heatsink maintaining T_C ≤ 100 °C is required to keep T_j ≤ 175 °C. Thermal interface material and mounting pressure significantly impact actual performance.

Is the body diode in IPP100N08S207AKSA1 suitable for synchronous rectification?

Yes - its forward voltage is specified at 0.9–1.3 V at 80 A and 25 °C, with reverse recovery charge Q_rr = 290–360 nC and t_rr = 90–110 ns. These values support synchronous rectification in 48 V DC-DC converters up to ~50 kHz, though dead-time optimization is essential to avoid shoot-through.

How does AEC-Q101 qualification impact the use of IPP100N08S207AKSA1 in non-automotive applications?

AEC-Q101 qualification confirms enhanced reliability under temperature cycling, humidity, and mechanical stress - beneficial for industrial motor drives and renewable energy inverters exposed to harsh environments. However, it does not imply functional safety certification (e.g., ISO 26262 ASIL), so system-level fault handling remains the designer's responsibility.

IPP100N08S207AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP100N08S207AKSA1 FAQ

1.How can I place an order for IPP100N08S207AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N08S207AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N08S207AKSA1 reliable?

The price and inventory of IPP100N08S207AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N08S207AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP100N08S207AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N08S207AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N08S207AKSA1?

IPP100N08S207AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N08S207AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N08S207AKSA1?

For technical support, including IPP100N08S207AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N08S207AKSA1 requirements.

6.How does Aetrix verify that IPP100N08S207AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP100N08S207AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N08S207AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP100N08S207AKSA1?

All IPP100N08S207AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N08S207AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N08S207AKSA1 part is unused and in its original packaging.

Return procedure for IPP100N08S207AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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