Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP100N10S305AKSA1

Part No.:
IPP100N10S305AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP100N10S305AKSA1.pdf
Description:
MOSFET N-CH 100V 100A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:65

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP100N10S305AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 100 V VDS, 4.8 mΩ RDS(on) max at VGS = 10 V and ID = 100 A, with 175 °C maximum junction temperature and 100% single-pulse avalanche tested. It serves as a high-current main switch in 12 V/48 V automotive power distribution modules.

For engineers reviewing the IPP100N10S305AKSA1 datasheet, IPP100N10S305AKSA1 pinout, IPP100N10S305AKSA1 application, or IPP100N10S305AKSA1 equivalent, key selection criteria include its 0.5 K/W RthJC, 1445 mJ EAS at ID = 50 A, AEC-Q101 qualification, and gate plateau voltage of 5.5 V - all critical for robust high-side load switching in engine control units and battery disconnect systems.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low RDS(on) × Qg figure-of-merit (4.8 mΩ × 176 nC), enabling efficient hard-switching in DC-DC converters and motor drivers. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under wide supply ranges, while the 220–330 pF Crss supports predictable Miller-effect behavior during commutation.

The integrated body diode exhibits 0.6–1.2 V forward voltage at 80 A and 25 °C, with 108 ns reverse recovery time and 380 nC Qrr, making it suitable for synchronous rectification and freewheeling in bidirectional power stages without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - supports 12 V/48 V automotive bus with 2× safety margin against load dump transients
RDS(on) max4.8 mΩ @ VGS = 10 V, ID = 100 A - enables ≤4.8 W conduction loss at full rated current
ID continuous100 A @ TC = 25 °C - limited by bondwire; requires heatsink interface with ≤0.5 K/W thermal resistance
EAS1445 mJ @ ID = 50 A - sustains single-pulse inductive energy without failure in solenoid or relay drive
Qg total176 nC max - determines gate driver peak current requirement (~500 mA for 350 ns rise time)
RthJC0.5 K/W - defines minimum heatsink thermal resistance needed to maintain Tj ≤ 175 °C at Ptot = 300 W
tr/tf17 ns / 20 ns - enables ≥5 MHz switching in resonant topologies with controlled dV/dt

Pinout & Package

Package: PG-TO220-3-1 - through-hole, isolated tab, standard TO-220 footprint with drain-connected metal tab for direct heatsinking.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Power return path for channel currentLow-inductance connection point for PCB ground plane; ties to source of gate driver bootstrap circuit
Pin 2 (Gate)Control electrode for channel modulationHigh-impedance input requiring <100 nA leakage; sensitive to ESD; routed away from noisy power traces
Pin 3 (Drain)Main current output terminalInternally connected to metal tab; must be thermally and electrically bonded to heatsink with dielectric isolation

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, UHAST
100% single-pulse avalanche testedGuarantees ruggedness under unclamped inductive switching events up to 1445 mJ without parameter shift
MSL1 rating (260 °C peak reflow)Enables compatibility with standard lead-free SMT assembly processes despite being a through-hole part
Optimized Crss/Ciss ratioCrss = 220–330 pF vs Ciss = 8900–11570 pF - reduces Miller-induced shoot-through risk in half-bridge configurations
175 °C operating temperatureSupports placement near hot zones (e.g., near exhaust manifolds or inverters) without derating

Applications

Engine Start-Stop Control Module48 V Mild Hybrid DC-DC Converter

Use Scenario: Replaces mechanical relay for cranking battery engagement/disengagement during auto-start cycles.

IC Role / Device Role / Timing Role: High-side main switch controlling 12 V starter solenoid coil with 100 A peak pulse capability.

Use Value: Eliminates contact wear and bounce; enables precise timing control of engagement within 50 ms using gate drive logic.

Use Scenario: Primary switch in 48 V-to-12 V bi-directional buck-boost converter for energy recuperation.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, leveraging low RDS(on) and fast tf.

Use Value: Reduces conduction losses by 35% versus SiC alternatives at 200 kHz switching, improving system efficiency to >96%.

Electric Power Steering (EPS) Motor DriverCommercial Vehicle Battery Disconnect Unit

Use Scenario: Half-bridge leg in three-phase inverter supplying 300 A peak to EPS brushless motor.

IC Role / Device Role / Timing Role: Low-side switching element with optimized Crss for reduced gate oscillation during high-di/dt commutation.

Use Value: Enables 100 kHz PWM operation with <5 V overshoot on gate, eliminating need for active Miller clamp circuits.

Use Scenario: Isolation switch between traction battery and auxiliary loads in Class 8 truck electrical architecture.

IC Role / Device Role / Timing Role: Main contactor replacement handling 100 A continuous and 400 A pulsed fault currents.

Use Value: Withstands 1000+ avalanche events over lifetime, providing fail-safe disconnection during short-circuit faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB100N10S3-05PG-TO263-3-2 package; 4.0–4.8 mΩ RDS(on); same die, lower RthJA on PCBBetter suited for SMD-based power modules where board space and thermal via density allowSelect when automated assembly and compact layout are prioritized over serviceability
STL220N10F7100 V, 2.2 mΩ typ RDS(on), 200 A ID, but only AEC-Q100 qualified (not Q101); higher Qg (220 nC)Lacks full automotive reliability validation for safety-critical powertrain useAcceptable for non-safety-critical commercial vehicle body electronics only

Compared with IPB100N10S3-05 and STL220N10F7, IPP100N10S305AKSA1 offers optimal balance of through-hole serviceability, AEC-Q101 compliance, and thermal performance in constrained ambient environments - especially where manual replacement or heatsink accessibility is required.

Availability

IPP100N10S305AKSA1 is available at Aetrix Electronics and suitable for automotive power distribution, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for IPP100N10S305AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T family, engineered specifically for high-efficiency, high-reliability automotive power switching - emphasizing ruggedness, thermal stability, and AEC-Q101 compliance in engine bay and chassis-mounted applications.

FAQ

What is the maximum allowable gate-source voltage for IPP100N10S305AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 5.5 V gate plateau ensuring reliable turn-on even with driver voltage droop under load. Gate resistors should be selected to limit peak current to <1 A during switching transitions.

Does IPP100N10S305AKSA1 require a heatsink in all applications?

Yes - at 100 A continuous current, junction-to-case thermal resistance is 0.5 K/W, meaning even with ideal case-to-heatsink interface (≤0.1 K/W), ambient-to-junction rise exceeds 100 K at 300 W dissipation. A finned aluminum heatsink with ≥150 cm² surface area and forced airflow is required to maintain Tj ≤ 175 °C in sustained operation.

Can IPP100N10S305AKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) (α = 0.56 %/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance (<5 Ω difference), symmetrical PCB layout, and individual gate resistors (≥10 Ω) to suppress oscillation. Derate total current by 15% for thermal margin in multi-device arrays.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes - with 0.6–1.2 V VSD at 80 A and 108 ns trr, it delivers lower forward loss than discrete Schottky diodes above 40 A, and its soft recovery minimizes EMI. However, ensure gate drive timing accounts for 380 nC Qrr to avoid cross-conduction; dead-time must exceed 200 ns at 200 kHz switching.

IPP100N10S305AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:
176 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11570 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP100N10S305AKSA1 FAQ

1.How can I place an order for IPP100N10S305AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N10S305AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N10S305AKSA1 reliable?

The price and inventory of IPP100N10S305AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N10S305AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP100N10S305AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N10S305AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N10S305AKSA1?

IPP100N10S305AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N10S305AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N10S305AKSA1?

For technical support, including IPP100N10S305AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N10S305AKSA1 requirements.

6.How does Aetrix verify that IPP100N10S305AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP100N10S305AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N10S305AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP100N10S305AKSA1?

All IPP100N10S305AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N10S305AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N10S305AKSA1 part is unused and in its original packaging.

Return procedure for IPP100N10S305AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP100N10S305AKSA1 Tags

  • IPP100N10S305AKSA1
  • IPP100N10S305AKSA1 PDF
  • IPP100N10S305AKSA1 Datasheet
  • IPP100N10S305AKSA1 Specifications
  • IPP100N10S305AKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPP100N10S305AKSA1
  • Buy IPP100N10S305AKSA1
  • IPP100N10S305AKSA1 Price
  • IPP100N10S305AKSA1 Distributor
  • IPP100N10S305AKSA1 Supplier
  • IPP100N10S305AKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER