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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP10N03LB G

Name: IPP10N03LB G
Brand: Infineon Technologies
SKU: IPP10N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP10N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP10N03LB G.pdf

Description:: MOSFET N-CH 30V 50A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP10N03LB G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 9.9 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 175 °C maximum junction temperature and dv/dt rating for robust switching in high-frequency DC/DC converters.

For engineers reviewing the IPP10N03LB G datasheet, IPP10N03LB G pinout, IPP10N03LB G application, or IPP10N03LB G equivalent, key selection criteria include gate charge (Q_g = 10–13 nC), thermal resistance (R_thJC = 2.6 K/W), reverse diode forward voltage (V_SD = 1.0–1.2 V at 50 A), and avalanche energy (E_AS = 57 mJ).

Technical Context

This device employs a trench-based silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency synchronous rectification and primary-side switching in isolated and non-isolated topologies. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) ensures full enhancement with 3.3 V or 5 V drive.

The integrated body diode features low reverse recovery charge (Q_rr = 10 nC) and fast recovery (t_rr implied by di/dt = 400 A/µs test condition), supporting ZVS and hard-switched operation up to several hundred kHz. Thermal design is enabled by its 2.6 K/W junction-to-case resistance and 175 °C rated operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications
R_DS(on) max	9.9 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at 50 A
Q_g	10–13 nC - Low gate drive power requirement for high-frequency PWM
E_AS	57 mJ - Withstands single-pulse inductive energy without failure
R_thJC	2.6 K/W - Allows 58 W dissipation with ≤150 K case-to-ambient delta
V_GS(th)	1.2–2.0 V - Fully enhanced by standard logic-level microcontroller GPIO
dv/dt rating	6 kV/µs - Resists false turn-on in noisy high-dV/dt environments

Pinout & Package

Package: PG-TO220-3-1 - Through-hole, thermally enhanced variant with isolated drain tab and standard lead pitch; case temperature (T_C) referenced to mounting surface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, high-side or low-side switch node	Electrically and thermally connected to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Reference terminal for gate drive and current return	Low-inductance connection critical for stable switching; ties to power ground or source of complementary FET
Gate	Control electrode for channel modulation	High-impedance input requiring controlled slew rate; susceptible to ESD; must be driven with low-Z source

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate driver boost stages in 3.3 V/5 V systems
Optimized FOM (R_DS(on) × Q_g)	~99 mΩ·nC - Balances conduction and switching losses for >500 kHz DC/DC operation
Robust dv/dt immunity	Rated 6 kV/µs - Prevents parasitic turn-on during fast voltage transients in half-bridge configurations
High-temperature operation	175 °C T_j,max - Supports compact thermal design in sealed or high-ambient industrial enclosures

Applications

Server VRM

Industrial SMPS

Use Scenario: Point-of-load buck converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-current, high-frequency (600–800 kHz) buck stage.

Use Value: 9.9 mΩ R_DS(on) and 10–13 nC Q_g reduce total power loss to <2.1 W at 50 A, improving VRM efficiency by ≥1.2% vs. legacy MOSFETs.

Use Scenario: Primary-side switch in 24 V input, 400 W industrial AC/DC front-end with active PFC.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC boost stage.

Use Value: 57 mJ E_AS and 6 kV/µs dv/dt rating ensure reliable operation under line surge and inductive kickback conditions.

Automotive DC/DC

Telecom POL

Use Scenario: 12 V to 5 V/3.3 V step-down converter in automotive infotainment head unit.

IC Role / Device Role / Timing Role: Low-side synchronous FET in 300 kHz buck regulator with 175 °C ambient tolerance.

Use Value: 175 °C rated junction temperature and -55 °C to +175 °C storage range meet AEC-Q101 stress requirements without derating.

Use Scenario: Secondary-side synchronous rectifier in 48 V to 12 V intermediate bus converter for telecom base stations.

IC Role / Device Role / Timing Role: Fast-recovery body diode used in quasi-resonant forward topology.

Use Value: Q_rr = 10 nC and V_SD = 1.0–1.2 V minimize reverse recovery loss and conduction drop, increasing conversion efficiency by 0.8–1.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK30ZFP	R_DS(on) = 120 mΩ @ 10 V; higher Q_g (25 nC); Zener-protected gate	Lower frequency (<100 kHz) and lower current (≤10 A) use cases	Preferable where gate ruggedness outweighs efficiency needs
IRF3709ZCPBF	R_DS(on) = 11 mΩ @ 4.5 V; Q_g = 22 nC; TO-220AB package	Same footprint but higher gate drive demand and reduced thermal performance (R_thJC = 3.0 K/W)	Acceptable for moderate-frequency designs with margin on gate drive capability

Compared with STP10NK30ZFP and IRF3709ZCPBF, IPP10N03LB G delivers superior high-frequency efficiency via lower R_DS(on) × Q_g, tighter V_GS(th) distribution, and better thermal resistance-critical for space-constrained, high-power-density applications.

Availability

IPP10N03LB G is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, automotive DC/DC converters, and telecom POL modules requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for IPP10N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 power MOSFET product line, engineered for high-efficiency, high-frequency switching in DC/DC conversion, motor control, and power supply applications.

FAQ

Is IPP10N03LB G suitable for synchronous rectification in a 48 V to 12 V LLC resonant converter?

Yes. Its 9.9 mΩ R_DS(on), 10–13 nC Q_g, and 175 °C rating support high-efficiency synchronous rectification in LLC secondaries operating up to 300 kHz. The low V_SD (1.0–1.2 V) and Q_rr = 10 nC further reduce body-diode conduction loss during dead-time intervals.

What is the recommended gate resistor value for hard-switched 200 kHz operation?

A 2.7 Ω gate resistor is validated per datasheet Figure 16 for V_DD = 15 V, I_D = 40 A, yielding t_r ≈ 5–7 ns and t_f ≈ 3.0–4.5 ns. For 200 kHz hard-switching, this value balances EMI control and switching loss; increase to 4.7 Ω only if ringing exceeds layout constraints.

Does IPP10N03LB G have built-in ESD protection on the gate?

No. The device lacks integrated gate oxide protection diodes. External TVS or RC snubbing is required at the gate terminal, especially in automated assembly or high-humidity environments. Gate-source Zener clamping at ±20 V must be externally implemented per JEDEC JESD22-A114.

Can IPP10N03LB G replace IPP100N03LG in an existing design?

No. Though both are 30 V OptiMOS devices, IPP100N03LG has 100 A rating, TO-220FP package, and different R_DS(on) (3.2 mΩ), Q_g (42 nC), and thermal resistance (R_thJC = 1.5 K/W). Direct substitution risks thermal overload and gate drive mismatch without layout and drive circuit revision.

IPP10N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1639 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP10N03LB G FAQ

1.How can I place an order for IPP10N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP10N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP10N03LB G reliable?

The price and inventory of IPP10N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP10N03LB G is usually 5 days.

3.What payment methods are accepted for IPP10N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP10N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP10N03LB G?

IPP10N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP10N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP10N03LB G?

For technical support, including IPP10N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP10N03LB G requirements.

6.How does Aetrix verify that IPP10N03LB G is sourced from the original manufacturer or authorized distributors?

All IPP10N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP10N03LB G meets industry standards.

7.What is the process for return or replacement of IPP10N03LB G?

All IPP10N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPP10N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP10N03LB G part is unused and in its original packaging.

Return procedure for IPP10N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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