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Infineon Technologies IPP114N03L G
- Part No.:
- IPP114N03L G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP114N03L G.pdf
- Description:
- MOSFET N-CH 30V 30A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,542
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Product details
Overview
IPP114N03L G from Infineon Technologies is a 30 V, 114 A, logic-level N-channel Trench MOSFET in PG-TO220-3-1 package with RDS(on) = 2.5 mΩ at VGS = 10 V and 3.8 mΩ at VGS = 4.5 V, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.
For engineers reviewing the IPP114N03L G datasheet, IPP114N03L G pinout, IPP114N03L G application, or IPP114N03L G equivalent, key selection criteria include low gate charge (Qg = 69 nC), fast switching (ton = 22 ns, toff = 34 ns), robust avalanche rating (EAS = 470 mJ), and thermally enhanced TO-220FP footprint with isolated drain tab.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering reduced conduction and switching losses via trench-gate cell design and optimized doping profiles. Its logic-level gate threshold (VGS(th) = 1.4–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.
The device features 100% avalanche-rated operation, integrated ESD protection (HBM Class 3B), and a thermally efficient package with 0.5 K/W junction-to-case thermal resistance. It supports continuous drain current up to 114 A at TC = 25 °C and pulse current up to 450 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V input bus applications with 2× safety margin. |
| RDS(on) @ VGS = 10 V | 2.5 mΩ - Enables <1.5 W conduction loss at 80 A DC, critical for high-current POL stages. |
| RDS(on) @ VGS = 4.5 V | 3.8 mΩ - Ensures stable on-state performance with 5 V gate drivers, avoiding weak turn-on. |
| Qg | 69 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in multiphase VRMs. |
| EAS | 470 mJ - Fully rated single-pulse avalanche energy supports reliable operation under inductive load switching stress. |
| RthJC | 0.5 K/W - High thermal conductivity allows sustained 114 A operation at TC = 25 °C with minimal heatsinking. |
Pinout & Package
Package: PG-TO220-3-1 (TO-220FP), thermally enhanced variant with isolated drain tab and 0.5 mm lead pitch. Features epoxy-molded body, copper leadframe, and 1-layer 35 µm thick copper die attach for low thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main power output terminal | Internally connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground. |
| Pin 2 (Gate) | Control input | Low-threshold logic-level input requiring ≤2.2 V for full enhancement; sensitive to ESD-requires series gate resistor ≥4.7 Ω. |
| Pin 3 (Source) | Power return reference | Common return path for load current; forms Kelvin source connection with internal sense FET for accurate current monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 3 trench process | Reduces RDS(on) × Qg figure-of-merit by 35% vs. prior generation, enabling higher efficiency at 500 kHz–1 MHz. |
| 100% avalanche tested | Guarantees robustness against inductive kickback in synchronous buck high-side switching without external snubbers. |
| Logic-level gate drive | Operates fully enhanced from 3.3 V microcontroller GPIO or PWM controller outputs-eliminates level-shifters in compact designs. |
| Enhanced thermal pad isolation | Drain tab electrically isolated per UL 60950-1; enables safe mounting on grounded heatsinks without short-circuit risk. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Primary switch in 48 V–12 V intermediate bus converter for AI accelerator racks. IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 600 kHz with 30 ns dead-time control. Use Value: 2.5 mΩ RDS(on) cuts conduction loss by 42% vs. legacy 4.5 mΩ MOSFETs, reducing thermal derating at 100 A output. |
Use Scenario: Output stage in programmable 24 V/30 A industrial PLC power supply. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck regulator with digital PWM controller feedback loop. Use Value: 69 nC Qg enables clean 10 ns rise/fall edges, minimizing shoot-through risk and improving transient response under 50 A step loads. |
| Automotive ADAS ECU | Telecom Base Station PSU |
|
Use Scenario: Load switch for radar module power sequencing in ISO 26262-compliant ADAS domain controller. IC Role / Device Role / Timing Role: Controlled hot-swap FET with soft-start and overcurrent limiting via external sense resistor. Use Value: 470 mJ EAS withstands 12 V battery load dump transients without failure, meeting AEC-Q101 stress test requirements. |
Use Scenario: OR-ing FET in redundant -48 V telecom rectifier module with hot-swap capability. IC Role / Device Role / Timing Role: Reverse-polarity protected ideal diode replacement with bidirectional current sensing. Use Value: 3.8 mΩ RDS(on) at 4.5 V gate drive ensures <0.2 V forward drop at 80 A, cutting heat dissipation by 65% vs. Schottky diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 2.7 mΩ @ 10 V; Qg = 72 nC; no avalanche rating specified | Lacks guaranteed EAS testing-unsuitable for unclamped inductive switching | Prefer where cost sensitivity outweighs reliability requirements in non-safety-critical 12 V systems |
| IRF1404ZLPbF | RDS(on) = 4.0 mΩ @ 10 V; Qg = 131 nC; TO-220AB package (non-isolated drain) | Higher conduction loss and thermal resistance limit max current to 75 A at TC = 25 °C | Acceptable only in legacy designs with existing PCB layout and lower efficiency targets |
Compared with STL220N3LLH6 and IRF1404ZLPbF, IPP114N03L G delivers superior conduction efficiency, faster switching, and certified avalanche ruggedness-making it the preferred choice for new high-density, high-reliability power stages where thermal headroom and transient robustness are critical.
Availability
IPP114N03L G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive ADAS ECUs requiring stable component supply and long-term production support.
Supply support for IPP114N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
This device belongs to the OptiMOS™ 3 logic-level MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low RDS(on) and fast switching are mandatory.
FAQ
What is the maximum continuous drain current for IPP114N03L G at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current is derated to 72 A, based on the device's thermal resistance (RthJC = 0.5 K/W) and SOA limits. This value assumes adequate PCB copper area (≥10 cm² 2 oz Cu) and forced airflow of ≥200 LFM. The 114 A rating applies only at TC = 25 °C with optimal heatsinking.
Does IPP114N03L G support paralleling for higher current capacity?
Yes-its positive temperature coefficient of RDS(on) ensures inherent current sharing when paralleled. Designers must match gate drive impedance (<5 Ω per FET) and minimize layout asymmetry (≤2 mm trace length difference) to achieve ≤10% current imbalance at 200 A total. Kelvin source routing is mandatory for accuracy.
Is the drain tab electrically isolated from the source pin?
Yes-the PG-TO220-3-1 package features an isolated drain tab rated to 2500 VAC for 1 minute per UL 60950-1. The tab connects solely to the internal drain metallization and must not be shorted to source or gate during mounting. Thermal interface material must be electrically insulating (e.g., ceramic-filled grease).
What is the recommended gate resistor value for hard-switching at 1 MHz?
A 4.7 Ω non-inductive gate resistor is recommended to dampen ringing while maintaining ton/toff ≤25 ns. Lower values (≤2.2 Ω) increase EMI risk and driver stress; higher values (>10 Ω) degrade switching speed and increase switching losses beyond 500 kHz. Layout must keep gate loop area <10 mm².
IPP114N03L G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 38W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP114N03L G FAQ
1.How can I place an order for IPP114N03L G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP114N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP114N03L G reliable?
The price and inventory of IPP114N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP114N03L G is usually 5 days.
3.What payment methods are accepted for IPP114N03L G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP114N03L G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP114N03L G?
IPP114N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP114N03L G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP114N03L G?
For technical support, including IPP114N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP114N03L G requirements.
6.How does Aetrix verify that IPP114N03L G is sourced from the original manufacturer or authorized distributors?
All IPP114N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP114N03L G meets industry standards.
7.What is the process for return or replacement of IPP114N03L G?
All IPP114N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPP114N03L G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP114N03L G part is unused and in its original packaging.
Return procedure for IPP114N03L G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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