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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP11N03LA

Name: IPP11N03LA
Brand: Infineon Technologies
SKU: IPP11N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP11N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP11N03LA.pdf

Description:: MOSFET N-CH 25V 30A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,669

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Product details

Overview

IPP11N03LA from Infineon Technologies is a 25 V, 30 A N-channel logic-level OptiMOS®2 power MOSFET in PG-TO220-3-1 package, featuring 11.5 mΩ max R_DS(on) at V_GS = 10 V and 9.6 mΩ typ at 30 A, optimized for high-frequency DC/DC converters and synchronous rectification in server VRMs and POL modules.

For engineers reviewing the IPP11N03LA datasheet, IPP11N03LA pinout, IPP11N03LA application, or IPP11N03LA equivalent, key selection criteria include its 2.9 K/W thermal resistance, 8.2–11 nC total gate charge, 175 °C maximum junction temperature, and dv/dt ruggedness (6 kV/µs), critical for hard-switched and fast-transient power stages.

Technical Context

This MOSFET employs a trench-based silicon process delivering low gate charge × R_DS(on) figure-of-merit (FOM) and enhanced thermal performance. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates a robust body diode with 10 nC reverse recovery charge (Q_rr) and 0.96–1.2 V forward voltage (V_SD) at 30 A, supporting efficient synchronous rectification and freewheeling in buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage suitable for 12 V input systems and point-of-load regulation
R_DS(on) max	11.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 30 A continuous current
Q_g total	8.2–11 nC - Low gate drive energy supports >1 MHz switching in high-efficiency SMPS
R_thJC	2.9 K/W - Enables high-power dissipation with minimal junction-to-case temperature rise
I_D continuous	30 A @ T_C = 25 °C - Rated for sustained load current in thermally managed PCB layouts
dv/dt rating	6 kV/µs - Confirmed ruggedness against parasitic turn-on in fast-switching applications
T_j,max	175 °C - Supports operation in high-ambient industrial and server environments

Pinout & Package

IPP11N03LA is housed in PG-TO220-3-1: a through-hole, isolated-tab package with standard TO-220 footprint and electrically insulated drain tab for simplified heatsinking and safety compliance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Low-inductance connection to ground plane; ties directly to source of synchronous FET in buck stage
Pin 2 (Gate)	Control terminal for channel modulation	Logic-level compatible; requires <11 nC drive for full enhancement at 10 V
Pin 3 (Drain)	Main current-carrying terminal (connected to tab)	Electrically isolated metal tab serves as high-current drain node and thermal interface to heatsink

Key Features

Feature	Design Value
OptiMOS®2 trench technology	Delivers industry-leading FOM (Q_g × R_DS(on)) enabling >95% efficiency in 48 V–12 V intermediate bus converters
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for automotive and industrial temperature cycling and humidity exposure
175 °C rated junction	Supports extended lifetime under sustained thermal stress in sealed enclosures or high-ambient deployments
Low Q_rr body diode	10 nC reverse recovery charge minimizes switching loss and EMI during hard commutation in synchronous rectifiers
Pb-free & RoHS compliant	Meets EU Directive 2011/65/EU with matte tin lead plating; no exemption required

Applications

Server Point-of-Load Converter

Industrial DC/DC Module

Use Scenario: High-density 48 V to 12 V or 12 V to 1 V conversion in rack-mounted servers with strict thermal budgets.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase buck regulator, operating at 500 kHz–1 MHz with tight duty-cycle control.

Use Value: 11.5 mΩ R_DS(on) and 2.9 K/W R_thJC reduce conduction loss and enable compact heatsink design within 1U chassis constraints.

Use Scenario: Isolated 24 V input to 5 V/3.3 V output in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: Low V_SD (0.96 V typ) and 10 nC Q_rr cut diode conduction loss by >40% versus Schottky alternatives at 30 A.

Telecom Base Station PSU

Automotive ADAS Power Management

Use Scenario: 48 V intermediate bus regulation feeding RF power amplifiers and digital signal processors.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck converter with phase-shifted PWM control.

Use Value: dv/dt rating of 6 kV/µs prevents false turn-on during fast voltage transients on shared bus lines.

Use Scenario: 12 V battery-fed power supply for camera module and radar sensor ECUs in ADAS domain controllers.

IC Role / Device Role / Timing Role: Load switch and overcurrent-protected power rail controller with integrated thermal shutdown.

Use Value: 175 °C T_j,max and JEDEC qualification ensure reliable operation across -40 °C to +125 °C ambient with transient surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB11N03LA	Same die, PG-TO263-3 (D²PAK) package; R_thJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO220	Better PCB thermal performance but requires surface-mount assembly and larger board area	Preferred for space-constrained SMT designs where heatsink mounting is impractical
IPP040N03L	Lower R_DS(on) (4.0 mΩ max), higher Q_g (24 nC), same V_DS/I_D rating	Higher conduction efficiency but increased gate drive loss above 500 kHz	Select when conduction loss dominates and switching frequency ≤300 kHz

Compared with IPB11N03LA and IPP040N03L, IPP11N03LA offers optimal balance of thermal manageability (TO220 tab isolation), gate drive simplicity (low Q_g), and ruggedness (dv/dt, avalanche), making it ideal for cost-sensitive, high-volume 12–24 V industrial and telecom power stages.

Availability

IPP11N03LA is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC/DC modules, and telecom base station power supplies requiring stable component supply and long-term manufacturability.

Supply support for IPP11N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS®2 logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, industrial, and telecom infrastructure where thermal density and gate drive compatibility are critical.

FAQ

What is the maximum safe operating voltage for IPP11N03LA?

The absolute maximum drain-source voltage (V_BR(DSS)) is 25 V, tested at I_D = 1 mA and T_j = 25 °C. Operation beyond this rating risks avalanche breakdown even with gate grounded. Derating is required above 125 °C junction temperature, where V_BR(DSS) decreases to ~22.5 V at 175 °C per Figure 15 in the datasheet.

Can IPP11N03LA be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.0 V, and it achieves full enhancement (R_DS(on) ≤ 11.5 mΩ) with V_GS ≥ 4.5 V. A 3.3 V drive yields ~14.8 mΩ R_DS(on), acceptable for moderate-current applications; for 30 A continuous use, 5 V or 10 V gate drive is recommended to minimize conduction loss.

Does IPP11N03LA include avalanche energy rating?

Yes - it is rated for 80 mJ single-pulse avalanche energy (E_AS) at I_D = 30 A, R_GS = 25 Ω, and T_j = 25 °C. This rating validates robustness against inductive switching transients in non-synchronous topologies and ensures reliability during startup or fault conditions without external snubbers.

How does the TO220-3-1 package differ from TO220-3-2 for this part?

PG-TO220-3-1 features an electrically isolated drain tab (insulated from mounting hardware), while PG-TO220-3-2 has a conductive tab. The isolation in IPP11N03LA's package eliminates need for insulating washers in heatsink mounting, simplifying mechanical design and improving thermal reliability in high-voltage systems.

IPP11N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1358 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP11N03LA FAQ

1.How can I place an order for IPP11N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP11N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP11N03LA reliable?

The price and inventory of IPP11N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP11N03LA is usually 5 days.

3.What payment methods are accepted for IPP11N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP11N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP11N03LA?

IPP11N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP11N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP11N03LA?

For technical support, including IPP11N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP11N03LA requirements.

6.How does Aetrix verify that IPP11N03LA is sourced from the original manufacturer or authorized distributors?

All IPP11N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP11N03LA meets industry standards.

7.What is the process for return or replacement of IPP11N03LA?

All IPP11N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPP11N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP11N03LA part is unused and in its original packaging.

Return procedure for IPP11N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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