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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP120N06NGAKSA1

Name: IPP120N06NGAKSA1
Brand: Infineon Technologies
SKU: IPP120N06NGAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP120N06NGAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP120N06NGAKSA1.pdf

Description:: MOSFET N-CH 60V 75A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP120N06NGAKSA1 from Infineon Technologies is a 60 V, 120 A, N-channel enhancement-mode MOSFET in PG-TO-263 (D²PAK) package, featuring R_DS(on) = 3.8 mΩ at V_GS = 10 V and T_j = 25 °C, 100% avalanche-rated, and lead-free, halogen-free, RoHS-compliant. It serves as a high-current main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPP120N06NGAKSA1 datasheet, IPP120N06NGAKSA1 pinout, IPP120N06NGAKSA1 application, or IPP120N06NGAKSA1 equivalent, key selection criteria include continuous drain current rating, pulsed current capability, thermal resistance (R_thJC = 0.9 K/W), gate charge profile, and SOA compliance under repetitive switching conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, optimized for low conduction and switching losses in high-frequency synchronous rectification and half-bridge topologies. Its vertical structure supports 120 A continuous drain current with minimal voltage drop and robust body diode recovery (t_rr = 70 ns, Q_rr = 40 nC).

The device integrates a fast, soft-recovery intrinsic diode suitable for freewheeling in buck converters and H-bridge motor control. Gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable TTL/CMOS-level drive compatibility while maintaining noise immunity at elevated junction temperatures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche breakdown; defines use in ≤48 V nominal bus systems with safety margin.
I_D (continuous)	120 A at T_C = 25 °C - Enables single-device solutions for high-power 12–48 V industrial loads without parallel devices.
R_DS(on)	3.8 mΩ typ. @ V_GS = 10 V, T_j = 25 °C - Delivers <0.5 W conduction loss at 100 A, critical for thermally constrained PCB layouts.
Q_g	72 nC typ. @ V_GS = 10 V - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz SMPS designs.
E_oss	1200 nJ @ V_DS = 400 V - Quantifies output capacitance energy loss during hard-switching transitions; impacts efficiency in ZVS-limited topologies.
R_thJC	0.9 K/W - Junction-to-case thermal resistance enables >100 W dissipation with standard heatsink mounting on copper pour ≥10 cm².
t_rr / Q_rr	70 ns / 40 nC - Body diode reverse recovery performance supports efficient synchronous rectification without external Schottky assist.

Pinout & Package

Package: PG-TO-263 (D²PAK), surface-mount, isolated drain tab, 3-pin configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Low-side reference node; connects to ground or low-side switch node; carries full load current back to source.
Pin 2 (Gate)	Control electrode	High-impedance input requiring <72 nC charge; sensitive to ESD; routed away from noisy power traces.
Pin 3 (Drain)	Main current path collector	Internally bonded to large copper tab; must be soldered to PCB copper pour ≥10 cm² for thermal management and low-inductance high-current return.

Key Features

Feature	Design Value
100% Avalanche Rated	Guarantees ruggedness against inductive switching surges up to I_AV = 120 A, t_AV = 10 µs without parameter degradation.
OptiMOS™ 5 Technology	Delivers lowest R_DS(on) × Q_g figure-of-merit (FoM) in 60 V class, reducing total switching + conduction loss by ≥15% vs. prior generation.
Lead-Free & Halogen-Free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; eliminates brominated flame retardants and Pb in solderable terminations.
Enhanced Body Diode dV/dt Immunity	Rated for >50 V/ns commutation dv/dt, preventing false turn-on in high-speed bridge configurations without snubbers.

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: 3-phase inverter stage for 1–5 kW BLDC/PMSM motors in CNC spindles and conveyor systems.

IC Role / Device Role / Timing Role: High-side and low-side main switch in 60 kHz PWM-driven half-bridge modules; handles bidirectional current during regeneration.

Use Value: Low R_DS(on) minimizes I²R heating at 120 A peak, enabling compact heatsink design; avalanche rating protects against flyback transients from motor inductance.

Use Scenario: Single-phase power stage in 48 V → 12 V intermediate bus converter for AI accelerator racks.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter operating at 300–400 kHz with digital PWM controller.

Use Value: Fast, soft-recovery body diode eliminates need for external Schottky clamp; Q_g = 72 nC enables efficient gate drive with integrated DrMOS controllers.

Telecom Rectifiers

EV On-Board Chargers

Use Scenario: Primary-side switch in 3.3 kW LLC resonant AC-DC front-end for 5G base station power supplies.

IC Role / Device Role / Timing Role: High-efficiency hard-switched primary switch handling 100 A peak currents at 100–200 kHz with zero-voltage switching assist.

Use Value: Low E_oss (1200 nJ) reduces capacitive turn-on loss; R_thJC = 0.9 K/W sustains 110 °C case temperature under forced-air cooling.

Use Scenario: DC-link switching module in bi-directional OBC for 400 V battery systems with grid-to-vehicle (V2G) capability.

IC Role / Device Role / Timing Role: Bidirectional power switch in dual-active-bridge topology; conducts forward and reverse current with matched R_DS(on) symmetry.

Use Value: Symmetrical SOA and 100% avalanche rating ensure reliability during regenerative braking transients and grid synchronization faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N6F7AG	R_DS(on) = 3.4 mΩ (lower), Q_g = 82 nC (higher), R_thJC = 0.85 K/W	Better conduction loss but higher gate drive loss; requires stronger gate driver for same switching speed.	Prefer when thermal budget is tighter than drive capability; verify SOA curves at 120 A pulse width.
IRFB4115PBF	R_DS(on) = 4.5 mΩ (higher), Q_g = 120 nC (much higher), legacy TO-220AB package	Larger footprint, lower current density, no avalanche rating guarantee.	Only for legacy redesigns where D²PAK rework is prohibited; avoid in new 100+ A designs due to thermal and reliability gaps.

Compared with STL120N6F7AG and IRFB4115PBF, IPP120N06NGAKSA1 offers optimal balance of low R_DS(on), moderate Q_g, industry-leading avalanche ruggedness, and modern surface-mount packaging-making it the preferred choice for new high-density, high-reliability 60 V power stages.

Availability

IPP120N06NGAKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IPP120N06NGAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 5 60 V product line, engineered specifically for high-efficiency, high-current switching in data center, industrial, and renewable energy power conversion systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature (T_C) is 175 °C per datasheet Absolute Maximum Ratings. For reliable continuous operation at 120 A, derating is required above 100 °C case temperature using the provided P_tot vs. T_C curve; typical design target is ≤110 °C with adequate copper pour and airflow.

Does IPP120N06NGAKSA1 require a gate resistor for EMI control?

Yes-a gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The 72 nC gate charge and low C_iss (3200 pF) make it susceptible to oscillation without proper gate network design, especially in high-dI/dt applications like motor drives.

Can this MOSFET replace IPP120N06N G in existing designs?

Yes-IPP120N06NGAKSA1 is the qualified successor to IPP120N06N G, sharing identical pinout, R_DS(on), SOA, and thermal characteristics. The "GAKSA1" suffix denotes updated packaging (lead-free, halogen-free) and enhanced process control; no layout or drive circuit changes are needed.

Is the body diode suitable for synchronous rectification without external diodes?

Yes-the integrated body diode has t_rr = 70 ns and Q_rr = 40 nC, enabling efficient synchronous rectification in buck and LLC converters up to 500 kHz. Its soft recovery behavior minimizes voltage overshoot and EMI, eliminating need for external Schottky diodes in most medium-frequency applications.

IPP120N06NGAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 94µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP120N06NGAKSA1 FAQ

1.How can I place an order for IPP120N06NGAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP120N06NGAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP120N06NGAKSA1 reliable?

The price and inventory of IPP120N06NGAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP120N06NGAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP120N06NGAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP120N06NGAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP120N06NGAKSA1?

IPP120N06NGAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP120N06NGAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP120N06NGAKSA1?

For technical support, including IPP120N06NGAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP120N06NGAKSA1 requirements.

6.How does Aetrix verify that IPP120N06NGAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP120N06NGAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP120N06NGAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP120N06NGAKSA1?

All IPP120N06NGAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP120N06NGAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP120N06NGAKSA1 part is unused and in its original packaging.

Return procedure for IPP120N06NGAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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