Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP120N08S404AKSA1

Part No.:
IPP120N08S404AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP120N08S404AKSA1.pdf
Description:
MOSFET N-CH 80V 120A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,310

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP120N08S404AKSA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO220-3-1 package, rated for 80 V VDS, 4.1 mΩ max RDS(on) at VGS = 10 V and ID = 100 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and on-board chargers.

For engineers reviewing the IPP120N08S404AKSA1 datasheet, IPP120N08S404AKSA1 pinout, IPP120N08S404AKSA1 application, or IPP120N08S404AKSA1 equivalent, key selection criteria include RDS(on) stability over temperature, avalanche ruggedness (EAS = 310 mJ), gate charge profile (Qg = 70–95 nC), and thermal resistance (RthJC = 0.84 K/W).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its gate threshold voltage (VGS(th) = 2.0–4.0 V) ensures robust noise immunity while enabling direct drive from standard 3.3 V/5 V logic controllers.

The integrated body diode supports synchronous rectification and freewheeling operation with trr = 70 ns and Qrr = 130 nC at Tj = 25 °C, and exhibits stable RDS(on) temperature coefficient (α ≈ 0.4) up to 175 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDS80 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems with transient margin.
RDS(on) max4.1 mΩ @ VGS = 10 V, ID = 100 A - Enables <1.2 W conduction loss at 120 A continuous current.
ID cont120 A @ TC = 25 °C - Supported by TO-220 package with copper tab and low RthJC = 0.84 K/W.
EAS310 mJ @ ID = 60 A - Confirmed single-pulse avalanche energy rating for inductive load turn-off reliability.
Qg70–95 nC - Defines gate driver power requirement and switching speed trade-off in hard-switched topologies.
tr/tf10 ns / 35 ns - Fast edge rates support >100 kHz PWM operation with minimized switching loss.
VGS(th)2.0–4.0 V - Ensures clean turn-on above typical microcontroller GPIO noise floor.

Pinout & Package

IPP120N08S404AKSA1 uses the PG-TO220-3-1 package: insulated plastic case with three leads, metal tab (drain) electrically connected to pin 2, and standard through-hole mounting footprint.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or current-sense shunt for feedback control.
Pin 2 (Drain)Drain terminalHigh-current power path; electrically tied to metal tab for thermal conduction and EMI shielding.
Pin 3 (Gate)Control inputHigh-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and layout-induced ringing.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements.
175 °C operating temperatureEnables placement near heat sources (e.g., inverter modules) without derating in under-hood environments.
100% avalanche testedEach unit undergoes single-pulse avalanche stress verification-no screening failure rate.
MSL1 reflow ratingCompatible with lead-free reflow profiles up to 260 °C peak, supporting automated PCB assembly.
OptiMOS™-T2 trench architectureReduces RDS(on) × Qg figure-of-merit by ~25% vs. prior generation for improved efficiency in 48 V systems.

Applications

Automotive On-Board Charger (OBC)48 V Mild Hybrid DC-DC Converter

Use Scenario: Bidirectional power conversion between 400 V traction battery and 48 V auxiliary bus during regenerative braking and start-stop cycles.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck-boost stage handling 10–15 kW continuous power.

Use Value: Low RDS(on) minimizes conduction loss at 120 A; avalanche rating ensures safe turn-off during bus fault transients.

Use Scenario: Step-down conversion from 48 V rail to 12 V for ADAS sensors, infotainment, and lighting loads.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge topology.

Use Value: Fast tr/tf enables >200 kHz switching, reducing magnetics size; low Qg eases gate driver design.

Electric Power Steering (EPS) InverterCommercial Vehicle HVAC Blower Drive

Use Scenario: Three-phase inverter supplying torque assist to steering column via 300–500 W BLDC motor.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack half-bridge configuration with space-constrained heatsink.

Use Value: RthJC = 0.84 K/W allows direct mounting to aluminum housing; 175 °C rating avoids thermal shutdown during peak assist events.

Use Scenario: High-reliability blower motor control in refrigerated truck cabins exposed to wide ambient (-40 to +85 °C).

IC Role / Device Role / Timing Role: Single-ended switch in PWM-controlled flyback or buck-derived supply.

Use Value: AEC-Q101 qualification ensures long-term reliability; 100% avalanche test prevents field failure from inductive kickback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP120N08N3-05RDS(on) = 3.5 mΩ max (lower), but VDS = 75 V and non-AEC-Q101 qualified.Suitable for industrial 48 V supplies where automotive qualification is not required.Select when higher efficiency outweighs automotive compliance and transient voltage margin.
IPB120N08S4-04Identical die, PG-TO263-3-2 package; RthJC = 0.84 K/W same, but surface-mount compatible.Preferred for automated SMT production and compact board layouts with thermal pads.Select for volume PCB assembly where reflow compatibility and smaller footprint are critical.

Compared with IPP120N08S404AKSA1, IPP120N08N3-05 trades voltage margin for lower RDS(on), while IPB120N08S4-04 retains identical electrical specs but shifts to SMD packaging-enabling either cost-optimized industrial use or high-density automotive PCB integration.

Availability

IPP120N08S404AKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across extended product lifecycles.

Supply support for IPP120N08S404AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/48 V/400 V power architectures.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 108 A at TC = 100 °C and VGS = 10 V, limited by thermal resistance and bondwire capacity-not by silicon channel capability. This rating assumes proper heatsinking and airflow per Infineon's thermal test conditions (FR4 PCB with 6 cm² copper area).

Does IPP120N08S404AKSA1 include an integrated Schottky diode?

No-it features a monolithic parasitic body diode inherent to vertical N-channel MOSFET structure. That diode has VSD = 0.9–1.3 V at IF = 100 A and trr = 70 ns, but it is not a discrete Schottky; external Schottky diodes may be added for improved reverse recovery in critical synchronous rectifier designs.

Is the gate oxide rated for 20 V absolute maximum, and can it tolerate negative gate voltage?

Yes-VGS rating is ±20 V, meaning the device tolerates –20 V gate-to-source voltage without oxide damage. However, sustained negative bias below –5 V is not recommended in normal operation due to increased Miller capacitance effects and potential for unintended turn-on during fast dv/dt events.

How does the 100% avalanche testing impact field reliability?

Every unit undergoes single-pulse avalanche stress at IAS = 99 A and EAS = 310 mJ-verifying robustness against inductive switching faults. This eliminates latent defects and correlates strongly with long-term reliability in motor drive and converter applications where unclamped inductive switching occurs.

IPP120N08S404AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
179W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP120N08S404AKSA1 FAQ

1.How can I place an order for IPP120N08S404AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP120N08S404AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP120N08S404AKSA1 reliable?

The price and inventory of IPP120N08S404AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP120N08S404AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP120N08S404AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP120N08S404AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP120N08S404AKSA1?

IPP120N08S404AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP120N08S404AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP120N08S404AKSA1?

For technical support, including IPP120N08S404AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP120N08S404AKSA1 requirements.

6.How does Aetrix verify that IPP120N08S404AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP120N08S404AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP120N08S404AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP120N08S404AKSA1?

All IPP120N08S404AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP120N08S404AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP120N08S404AKSA1 part is unused and in its original packaging.

Return procedure for IPP120N08S404AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP120N08S404AKSA1 Tags

  • IPP120N08S404AKSA1
  • IPP120N08S404AKSA1 PDF
  • IPP120N08S404AKSA1 Datasheet
  • IPP120N08S404AKSA1 Specifications
  • IPP120N08S404AKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPP120N08S404AKSA1
  • Buy IPP120N08S404AKSA1
  • IPP120N08S404AKSA1 Price
  • IPP120N08S404AKSA1 Distributor
  • IPP120N08S404AKSA1 Supplier
  • IPP120N08S404AKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER