Infineon Technologies IPP120N10S403AKSA1

Overview

IPP120N10S403AKSA1 from Infineon Technologies is a 100 V, 120 A N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, qualified to AEC-Q101, rated for 175 °C operation and 100 % avalanche tested. It delivers 3.4 mΩ typical R_DS(on) at V_GS = 10 V and supports 480 A pulsed drain current - deployed in high-current automotive DC-DC converters and on-board chargers.

For engineers reviewing the IPP120N10S403AKSA1 datasheet, IPP120N10S403AKSA1 pinout, IPP120N10S403AKSA1 application, or IPP120N10S403AKSA1 equivalent, key selection criteria include its 0.6 K/W junction-to-case thermal resistance, 100 % avalanche ruggedness, gate plateau voltage of 4.7 V, and integrated body diode with 1.0–1.3 V forward drop at 100 A.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched topologies. Its 7780 pF input capacitance (C_iss) and 2460 pF output capacitance (C_oss) support fast switching with controlled EMI, while the 36 nC gate-to-source charge (Q_gs) enables efficient gate drive design using standard 3.3 V/5 V logic-level controllers.

The MOSFET features a robust intrinsic body diode with 170 nC reverse recovery charge (Q_rr) and 80 ns t_rr, enabling reliable synchronous rectification and freewheeling in buck, half-bridge, and LLC resonant converters. Its 100 % single-pulse avalanche rating (770 mJ at I_D = 60 A) ensures fault tolerance under inductive load switching.

Key Specifications

Pinout & Package

IPP120N10S403AKSA1 is housed in a PG-TO220-3-1 package with isolated tab (drain-connected), offering mechanical robustness and proven thermal performance in high-reliability applications. The leadframe design supports >250 W power dissipation at T_C = 25 °C with appropriate heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPP120N10S403AKSA1, the IPP120N10N3GXKSA1 offers lower R_DS(on) at the cost of higher gate charge, while the IPB120N10S403AKSA1 provides identical electrical performance in surface-mount form - enabling direct substitution where mechanical constraints permit.

Availability

IPP120N10S403AKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial motor drives, and 48 V mild hybrid systems requiring stable component supply across multi-year production cycles.

Supply support for IPP120N10S403AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 power MOSFET product line, engineered for high-current, high-temperature automotive and industrial switching applications where avalanche ruggedness and thermal stability are critical.

FAQ

What is the maximum allowable gate-source voltage for IPP120N10S403AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks irreversible gate oxide damage. For reliable long-term use, gate drive should be clamped to +12 V to +15 V during turn-on and actively pulled to –5 V to –10 V during turn-off to suppress Miller-induced false triggering.

Does IPP120N10S403AKSA1 require external gate resistors in typical applications?

Yes - a series gate resistor (typically 5–22 Ω) is required to control dI/dt and dV/dt during switching, prevent oscillation, and limit peak gate current. Values depend on driver capability and target switching speed; lower values increase E_sw but reduce switching time, while higher values improve EMI but raise switching losses.

Can IPP120N10S403AKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) enables current sharing across paralleled units. Successful implementation requires matched gate drive paths, symmetrical PCB layout, identical heatsinking, and individual gate resistors to ensure simultaneous turn-on/turn-off and avoid current imbalance during transients.

Is the drain tab of IPP120N10S403AKSA1 electrically isolated from the package leads?

No - the metal tab is internally connected to the drain terminal. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory unless the heatsink is referenced to the drain potential. Failure to isolate may cause short circuits or safety hazards in grounded-system applications.