Infineon Technologies IPP120P04P404AKSA1

Overview

IPP120P04P404AKSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -40 V V_DS, 120 A continuous drain current at T_C = 25 °C, and 3.5 mΩ R_DS(on) (SMD version) at V_GS = -10 V. It features AEC qualification, 175 °C maximum operating temperature, and 100% single-pulse avalanche testing-designed for high-current automotive power switches in battery disconnect and reverse polarity protection circuits.

For engineers reviewing the IPP120P04P404AKSA1 datasheet, IPP120P04P404AKSA1 pinout, IPP120P04P404AKSA1 application, or IPP120P04P404AKSA1 equivalent, key selection criteria include verified R_DS(on) at -100 A, gate charge profile (Q_g = 158–205 nC), thermal resistance (R_thJC = 1.1 K/W), and AEC-Q101 compliance for under-hood automotive use.

Technical Context

This device operates as a normally-off P-channel power switch with gate threshold voltage V_GS(th) ranging from -2.0 V to -4.0 V at I_D = -340 µA. Its dynamic performance includes C_iss = 11.38–14.79 nF and t_r/t_f of 20 ns/52 ns under defined test conditions (V_DD = -20 V, R_G = 3.5 Ω).

The integrated body diode supports reverse recovery with t_rr = 69 ns and Q_rr = 95 nC at I_F = -50 A and di_F/dt = -100 A/µs. Thermal design is enabled by low junction-to-case resistance (1.1 K/W) and validated operation up to 175 °C ambient-referenced case temperature.

Key Specifications

Pinout & Package

IPP120P04P404AKSA1 uses the PG-TO220-3-1 package: a through-hole, 3-terminal, isolated tab configuration with drain-connected metal tab for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current automotive switch applications.

Compared with IPB120P04P404AKSA1 and IPI120P04P404AKSA1, IPP120P04P404AKSA1 offers through-hole serviceability and isolated tab mounting-ideal for prototyping, repair, and applications where mechanical robustness outweighs SMT density advantages.

Availability

IPP120P04P404AKSA1 is available at Aetrix Electronics and suitable for automotive battery management, engine control units, and start-stop system load switching requiring stable component supply across long production lifecycles.

Supply support for IPP120P04P404AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-P2 P-channel MOSFET product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power switching where low R_DS(on), rugged avalanche behavior, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum safe operating temperature for IPP120P04P404AKSA1?

The device is rated for continuous operation up to T_j = 175 °C and T_C = 175 °C, with thermal derating curves provided in the datasheet. At T_C = 100 °C, continuous drain current is -110 A at V_GS = -10 V. The 1.1 K/W R_thJC enables accurate junction temperature estimation using heatsink temperature measurements.

Does IPP120P04P404AKSA1 require a gate resistor for driving?

Yes-a series gate resistor is required to control dV/dt and prevent oscillation during switching. Typical values range from 2.2 Ω to 10 Ω depending on driver capability and EMI requirements. The gate charge (Q_g = 158–205 nC) and input capacitance (C_iss = 11.38–14.79 nF) define the RC time constant that determines rise/fall behavior.

Is the body diode suitable for continuous freewheeling in an H-bridge?

The integrated body diode supports I_S = -120 A continuous and I_S,pulse = -480 A, with V_SD = -1.0 to -1.3 V at -100 A and 25 °C. However, its reverse recovery charge (Q_rr = 95 nC) and time (t_rr = 69 ns) indicate it is optimized for unidirectional switching-not ideal for high-frequency synchronous rectification without external Schottky assist.

How does the AEC-Q101 qualification impact design validation?

AEC-Q101 qualification confirms the device passed accelerated stress tests including HTGB, HTRB, UHAST, and temperature cycling-validating reliability for automotive under-hood environments. It eliminates need for duplicate qualification testing but does not waive system-level functional safety analysis (e.g., ISO 26262 ASIL decomposition) for safety-critical functions.