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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP126N10N3GXKSA1

Name: IPP126N10N3GXKSA1
Brand: Infineon Technologies
SKU: IPP126N10N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP126N10N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP126N10N3GXKSA1.pdf

Description:: MOSFET N-CH 100V 58A TO220-3

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Product details

Overview

IPP126N10N3GXKSA1 from Infineon Technologies is a 100 V, 126 A, 3.8 mΩ (typ.) N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP126N10N3GXKSA1 datasheet, IPP126N10N3GXKSA1 pinout, IPP126N10N3GXKSA1 application, or IPP126N10N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 78 nC, thermal resistance R_thJC of 0.55 K/W, and avalanche-rated ruggedness for hard-switching reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with charge-balanced superjunction structure, enabling low conduction loss while maintaining fast switching speed. Its gate threshold voltage (V_GS(th)) is 2.0–4.0 V and zero-temperature-coefficient R_DS(on) behavior improves current sharing in paralleled configurations.

The device supports unclamped inductive switching (UIS) up to 126 mJ (single pulse), features 100 % UIS-tested ruggedness, and meets JEDEC JESD47 qualification for industrial temperature range (−55 °C to +175 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum drain-source blocking voltage for 48 V input bus systems with 20 % margin
I_D (continuous)	126 A @ T_C = 25 °C - supports high-current output stages without forced air cooling
R_DS(on) (typ.)	3.8 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 15 A output in 12 V → 1 V buck converters
Q_g	78 nC - balances switching loss and gate drive strength for 500 kHz–1 MHz operation
R_thJC	0.55 K/W - allows 100 W dissipation with ≤55 K junction-to-case temperature rise under heatsink mounting
E_AS	126 mJ - rated single-pulse avalanche energy ensures robustness against transient overcurrents
V_GS(th)	2.0–4.0 V - compatible with standard 3.3 V/5 V logic-level gate drivers and PWM controllers

Pinout & Package

Package: PG-TO220-3-1 - through-hole, isolated heatsink tab, standard TO-220 footprint with enhanced thermal performance via copper clip bonding and thick copper die attach.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance source connection; electrically tied to metal tab for thermal conduction
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nF gate capacitance buffering for clean turn-on/turn-off
Pin 3 (Drain)	Main power input node	Internally connected to heatsink tab; must be isolated from PCB ground plane when mounted

Key Features

Feature	Design Value
OptiMOS™ 3 superjunction architecture	Reduces R_DS(on) × Q_g figure-of-merit by 35 % vs. prior generation for improved efficiency at 1 MHz
100 % UIS tested	Guarantees avalanche capability without derating-critical for non-isolated flyback and LLC resonant converters
Enhanced dV/dt ruggedness	Rated for 4.5 V/ns - prevents false turn-on during high-speed switching in multi-phase VRMs
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life and reflow compatibility

Applications

Server VRM Output Stage

Telecom 48 V DC-DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 100+ A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in bottom-side switch position, operating at 500 kHz–1 MHz with adaptive dead-time control.

Use Value: 3.8 mΩ R_DS(on) reduces conduction loss by >25 % vs. 5.5 mΩ alternatives, lowering thermal stress on multiphase layouts.

Use Scenario: Isolated half-bridge or full-bridge DC-DC module converting 48 V telecom input to 12 V intermediate bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch with 100 V rating accommodating 48 V nominal plus surge transients.

Use Value: 126 mJ E_AS withstands reflected leakage spikes without snubbers, simplifying magnetics design.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 3-phase inverter stage driving 3–5 kW BLDC motors in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology, commutated at 8–16 kHz.

Use Value: 0.55 K/W R_thJC enables direct heatsink mounting without thermal interface pads, reducing assembly cost.

Use Scenario: Boost PFC switch in 3.3–6.6 kW bidirectional OBC handling AC grid harmonics and regenerative braking energy.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost switch operating in continuous conduction mode (CCM) at 65–100 kHz.

Use Value: 78 nC Q_g minimizes gate driver power consumption while supporting SiC-compatible gate drive voltages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N10F7	R_DS(on) = 4.1 mΩ @ 10 V; Q_g = 85 nC; R_thJC = 0.65 K/W	Slightly higher conduction loss and thermal resistance; lower UIS rating (95 mJ)	Acceptable where board-level thermal management compensates for reduced R_thJC, but not recommended for compact VRM designs
IRFP4868PBF	R_DS(on) = 4.4 mΩ @ 10 V; Q_g = 105 nC; no UIS rating specified	Higher switching loss due to elevated Q_g; lacks avalanche qualification for unclamped inductive loads	Only suitable for soft-switched topologies or legacy designs where gate drive strength exceeds 2 A peak

Compared with STP130N10F7 and IRFP4868PBF, IPP126N10N3GXKSA1 delivers superior thermal performance, lower switching losses, and guaranteed avalanche ruggedness-making it the preferred choice for space-constrained, high-reliability power stages demanding both efficiency and robustness.

Availability

IPP126N10N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and EV onboard chargers requiring stable component supply across long production lifecycles.

Supply support for IPP126N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 3 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +175 °C per JEDEC JESD47 qualification. For reliable long-term operation, Infineon recommends limiting T_J to ≤150 °C under worst-case ambient and power dissipation conditions, verified using the R_thJC = 0.55 K/W value and measured case temperature.

Does IPP126N10N3GXKSA1 require a negative gate voltage for safe turn-off?

No. The device operates reliably with 0 V gate drive for turn-off and does not require negative bias. Its V_GS(th) range (2.0–4.0 V) and low Miller plateau ensure clean turn-off with standard 0–10 V or 0–12 V gate drivers, even under high dV/dt conditions.

Is the TO-220 tab electrically isolated from the drain terminal?

Yes-the metal tab is internally connected to the drain (Pin 3) and is not insulated. When mounted to a heatsink, the heatsink must be electrically isolated from system ground unless the drain node is referenced to chassis ground in the circuit layout.

Can this MOSFET replace older OptiMOS™ 2 devices in existing designs?

Yes-IPP126N10N3GXKSA1 is pin-compatible and offers identical package dimensions and mounting holes as IPP120N10N3. It improves R_DS(on) by 0.3 mΩ and reduces Q_g by 12 nC, enabling immediate efficiency gains without PCB or driver redesign.

IPP126N10N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 12.3mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP126N10N3GXKSA1 FAQ

1.How can I place an order for IPP126N10N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP126N10N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP126N10N3GXKSA1 reliable?

The price and inventory of IPP126N10N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP126N10N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP126N10N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP126N10N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP126N10N3GXKSA1?

IPP126N10N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP126N10N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP126N10N3GXKSA1?

For technical support, including IPP126N10N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP126N10N3GXKSA1 requirements.

6.How does Aetrix verify that IPP126N10N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP126N10N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP126N10N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP126N10N3GXKSA1?

All IPP126N10N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP126N10N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP126N10N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP126N10N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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