Infineon Technologies IPP12CNE8N G

Overview

IPP12CNE8N G from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 85 V V_DS, 67 A continuous drain current at T_C = 25 °C, and 12.9 mΩ max R_DS(on) at V_GS = 10 V. It supports 175 °C junction operation and is optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPP12CNE8N G datasheet, IPP12CNE8N G pinout, IPP12CNE8N G application, or IPP12CNE8N G equivalent, key selection criteria include its gate charge × R_DS(on) figure of merit (FOM), low 1.2 K/W R_thJC, 48 nC total gate charge, and robust 154 mJ single-pulse avalanche energy - all critical for efficiency and reliability in hard-switched power stages.

Technical Context

This MOSFET employs a planar OptiMOS®2 process with optimized cell pitch and trench-free structure to minimize conduction and switching losses simultaneously. Its gate threshold voltage (2–4 V) ensures stable turn-on under wide supply conditions, while low C_iss (3260–4340 pF) and C_rss (44–66 pF) support fast, controllable switching up to several hundred kHz.

The integrated body diode exhibits 103 ns reverse recovery time and 255 nC Q_rr, enabling efficient synchronous rectification without external Schottky replacement in medium-power buck and LLC topologies. Thermal design is facilitated by direct die-to-case conduction path and JEDEC-qualified 175 °C operation.

Key Specifications

Pinout & Package

IPP12CNE8N G uses PG-TO220-3 package: isolated tab (Drain), center lead (Source), left lead (Gate) when viewed with label side up and leads down. Mounting hole centered on tab for mechanical stability and thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB12CNE8N G and IPD12CNE8N G, IPP12CNE8N G offers identical silicon performance but superior mechanical robustness and field-serviceability via through-hole mounting - ideal where vibration resistance, manual replacement, or high-reliability service life are required.

Availability

IPP12CNE8N G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard charger PFC stages requiring stable component supply and long-lifecycle support.

Supply support for IPP12CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOS®2 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP12CNE8N G supports 48 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO220 package and ensures safe operation within its 1.2 K/W R_thJC constraint when heatsink temperature remains ≤100 °C.

Is the body diode suitable for synchronous rectification without external Schottky diodes?

Yes - the integrated body diode has 103 ns t_rr and 255 nC Q_rr, verified across temperature and current ranges. When paired with appropriate gate timing (e.g., delayed turn-on to avoid cross-conduction), it delivers efficiency comparable to discrete Schottky solutions in 12–48 V output buck converters up to 300 kHz.

Does this MOSFET require gate resistors for reliable operation?

Yes - a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by parasitic L_g and C_iss, especially in high-di/dt applications. The device's 1.5 Ω intrinsic R_G alone is insufficient to suppress oscillation; external resistance also controls dV/dt and mitigates Miller-induced false turn-on.

What is the gate threshold voltage range and how does it affect drive compatibility?

V_GS(th) is specified from 2 V (min) to 4 V (max) at T_j = 25 °C. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers, while avoiding unintended conduction at 3.3 V logic levels. At 175 °C, threshold drops to ~1.5 V, so drive voltage margin must be maintained in high-temp operation.