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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP139N08N3G

Name: IPP139N08N3G
Brand: Infineon Technologies
SKU: IPP139N08N3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP139N08N3G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP139N08N3G.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP139N08N3G from Infineon Technologies is a 75 V, 139 A, 3.2 mΩ N-channel enhancement-mode power MOSFET in PG-TO-263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters requiring low conduction loss and robust avalanche capability.

For engineers reviewing the IPP139N08N3G datasheet, IPP139N08N3G pinout, IPP139N08N3G application, or IPP139N08N3G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 110 nC, t_rr of 70 ns, SOA compliance up to 100 µs, and qualified per AEC-Q101 for automotive-grade reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve ultra-low R_DS(on) × Q_g figure-of-merit. It features a fully avalanche-rated design (E_AS = 470 mJ at T_j = 25 °C) and supports hard-switching topologies without external snubbers.

The device integrates a fast-recovery body diode (t_rr = 70 ns, Q_rr = 78 nC) with soft recovery characteristics, enabling efficient synchronous rectification and bidirectional current handling in half-bridge and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage; supports 48 V nominal bus systems with ≥50 % safety margin.
I_D (continuous)	139 A at T_C = 25 °C - Enables high-current switching in compact heatsink designs without forced air cooling.
R_DS(on)	3.2 mΩ max at V_GS = 10 V - Delivers <0.6 W conduction loss at 13 A, critical for >95 % efficiency in 12–48 V POL converters.
Q_g	110 nC typ - Reduces gate drive power and enables use with standard 1-A peak gate drivers in 100–200 kHz SMPS.
E_AS	470 mJ at T_j = 25 °C - Withstands repetitive unclamped inductive switching events in motor phase-legs without derating.
t_rr	70 ns typ - Minimizes reverse recovery loss and EMI in synchronous buck and LLC resonant converters.
Z_thJC	0.45 K/W - Enables 120 W continuous power dissipation with 40 °C case temperature rise, supporting high-density PCB layouts.

Pinout & Package

PG-TO-263-3 (D²-Pak) package with exposed drain pad on bottom side for thermal enhancement and mechanical stability. Standard 3-pin layout with G-D-S terminal assignment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Pad)	Drain (D)	Electrically and thermally connected to internal die backside; must be soldered to large copper pour for thermal management.
Pin 2	Source (S)	Power return path for load current; referenced to gate driver ground; forms Kelvin source connection in high-side configuration.
Pin 3	Gate (G)	Control input with 110 nC total charge; requires low-inductance routing and RC snubber (10 Ω + 100 pF) for EMI suppression.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed single-pulse E_AS = 470 mJ enables reliable operation in inductive switching without external clamping.
Optimized gate charge profile	Q_gs:Q_gd ratio of ~1:2.3 reduces Miller-induced shoot-through risk in bridge circuits.
Low R_DS(on) × Q_g	352 mΩ·nC - Balances switching loss and conduction loss for optimal efficiency across 50–200 kHz range.
Fast body diode recovery	t_rr = 70 ns with softness factor >1.2 - Limits voltage overshoot and di/dt stress during commutation.
AEC-Q101 qualified	Validated for automotive under-hood applications including EPS, HVAC blowers, and 48 V mild-hybrid DC-DC stages.

Applications

Automotive EPS Motor Drive

Industrial 48 V DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase brushless motor in electric power steering system.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 20–40 kHz PWM-controlled inverter stage.

Use Value: 3.2 mΩ R_DS(on) limits I²R loss to <1.8 W per FET at 24 A RMS, enabling passive cooling in sealed module housing.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V bi-directional DC-DC converter for server PSUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating in ZVS mode with 100–150 kHz switching frequency.

Use Value: 70 ns t_rr and low Q_rr reduce reverse recovery loss by 40 % vs. standard silicon diodes, improving full-load efficiency by 0.8 %.

Solar Microinverter Half-Bridge

Server VRM High-Side Switch

Use Scenario: AC-side switching in transformerless microinverter with 600 V DC link and 50 Hz output synchronization.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology with active clamp-assisted turn-off.

Use Value: 470 mJ E_AS withstands worst-case line transients and grid fault conditions without failure, meeting IEC 62109 safety requirements.

Use Scenario: High-side switch in multiphase 48 V to 0.8 V VRM supplying AI accelerator GPUs.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with 30 A per phase peak current.

Use Value: 0.45 K/W Z_thJC allows 120 W dissipation with ≤40 °C ΔT, supporting 3× parallel phase count in 1U chassis with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB136N08N3G	R_DS(on) = 3.6 mΩ (higher), Q_g = 100 nC (lower), same package and V_DS.	Better gate drive efficiency but higher conduction loss; suited for medium-current, high-frequency designs.	Select when gate drive power budget is tighter than thermal margin, e.g., battery-powered tools.
IPI139N08N3G	Identical R_DS(on), Q_g, and SOA; differs only in marking and tape-and-reel packaging.	No functional difference; used interchangeably in production where reel orientation or traceability requirements differ.	Choose for drop-in replacement where logistics or ERP system mandates specific part variant code.

Compared with IPB136N08N3G, IPP139N08N3G delivers lower conduction loss at high current but requires slightly more gate drive energy; versus IPI139N08N3G, it offers identical electrical performance with distinct reel labeling for manufacturing traceability.

Availability

IPP139N08N3G is available at Aetrix Electronics and suitable for automotive EPS modules, industrial 48 V DC-DC converters, solar microinverters, and server VRMs requiring stable component supply and long-term lifecycle support.

Supply support for IPP139N08N3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication infrastructure.

This device belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency switching in automotive, industrial, and renewable energy systems where low R_DS(on) and ruggedness are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, but continuous operation above 150 °C requires derating of I_D and P_tot per the SOA curve in Figure 1. At T_C = 100 °C, the device supports 85 A continuous drain current with R_DS(on) increased to 4.3 mΩ due to temperature coefficient.

Does IPP139N08N3G support paralleling for higher current capacity?

Yes - its positive temperature coefficient for R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared source inductance <1 nH per FET to avoid dynamic imbalance above 100 kHz.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode exhibits soft recovery (softness factor >1.2) and low Q_rr (78 nC), making it viable for synchronous rectification up to 200 kHz. However, external Schottky diodes remain preferred above 300 kHz due to lower forward voltage at light loads.

What is the recommended gate resistor value for hard-switching at 150 kHz?

A 5.6 Ω gate resistor is recommended to limit peak gate current to <2 A while achieving ~40 ns turn-on and ~65 ns turn-off delays. Add a 100 pF capacitor in parallel to suppress ringing caused by stray inductance in the gate loop.

IPP139N08N3G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP139N08N3G FAQ

1.How can I place an order for IPP139N08N3G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP139N08N3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP139N08N3G reliable?

The price and inventory of IPP139N08N3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP139N08N3G is usually 5 days.

3.What payment methods are accepted for IPP139N08N3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP139N08N3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP139N08N3G?

IPP139N08N3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP139N08N3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP139N08N3G?

For technical support, including IPP139N08N3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP139N08N3G requirements.

6.How does Aetrix verify that IPP139N08N3G is sourced from the original manufacturer or authorized distributors?

All IPP139N08N3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP139N08N3G meets industry standards.

7.What is the process for return or replacement of IPP139N08N3G?

All IPP139N08N3G units undergo pre-shipment inspection (PSI). If there is an issue with IPP139N08N3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP139N08N3G part is unused and in its original packaging.

Return procedure for IPP139N08N3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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