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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP139N08N3 G

Name: IPP139N08N3 G
Brand: Infineon Technologies
SKU: IPP139N08N3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP139N08N3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP139N08N3 G.pdf

Description:: MOSFET N-CH 80V 45A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,857

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Product details

Overview

IPP139N08N3 G from Infineon Technologies is a 75 V, 139 A, 3.2 mΩ N-channel enhancement-mode power MOSFET in PG-TO-263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters operating at 100 kHz switching frequency with <12 nC total gate charge.

For engineers reviewing the IPP139N08N3 G datasheet, IPP139N08N3 G pinout, IPP139N08N3 G application, or IPP139N08N3 G equivalent, key selection criteria include R_DS(on) at 10 V_GS, single-pulse avalanche energy rating (E_AS = 420 mJ), thermal resistance (R_thJC = 0.5 K/W), and qualified AEC-Q101 stress testing for automotive-grade reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (V_GS(th)) of 2.0–3.5 V enables robust drive compatibility with 3.3 V and 5 V logic controllers.

The device integrates a fast-recovery body diode with t_rr = 45 ns and Q_rr = 78 nC, supporting synchronous rectification and ZVS operation. Thermal design is enabled by its vertical copper clip construction and 1 cm² copper pad footprint for direct heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage for 12 V and 24 V automotive and industrial bus systems
I_D (continuous)	139 A at T_C = 25 °C - Supports high-current motor phases and battery disconnect paths without parallel devices
R_DS(on)	3.2 mΩ max at V_GS = 10 V, T_j = 25 °C - Enables <0.5 W conduction loss at 125 A, reducing heatsink requirements
Q_g	62 nC typical - Allows efficient gate driving with standard 1–2 A peak drivers at 100–200 kHz switching
E_AS	420 mJ - Withstands repetitive inductive turn-off transients in motor drives without derating
R_thJC	0.5 K/W - Enables >100 W continuous power dissipation with moderate heatsinking (ΔT = 50 K)
AEC-Q101	Qualified - Validated for automotive under-hood applications including EPS, HVAC blowers, and ADAS actuators

Pinout & Package

PG-TO-263-3 (D²-Pak) package with isolated tab, thermally enhanced copper clip, and 3-pin configuration: Drain (tab), Source (pin 1), Gate (pin 2). Mounting requires soldered tab to PCB copper area ≥100 mm² for optimal thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically and thermally connected to PCB copper pour; must be isolated from chassis ground unless system design specifies common-drain topology
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate driver return path
Gate (Pin 2)	Control input for channel conduction	Requires RC snubber (10 Ω + 100 pF) when driven by high-speed controllers to suppress ringing and dv/dt-induced false turn-on

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, enabling higher efficiency at 100–300 kHz
Fast-recovery body diode	t_rr = 45 ns, Q_rr = 78 nC - Minimizes reverse recovery loss in half-bridge and synchronous buck topologies
Vertical copper clip construction	Eliminates bond wires, lowering parasitic inductance (<1.5 nH) and improving current sharing in paralleled configurations
100% UIS tested	Every unit validated for unclamped inductive switching at rated I_D and V_DS, ensuring field robustness in motor fault conditions

Applications

Automotive Electric Power Steering (EPS)

Industrial BLDC Motor Inverter

Use Scenario: High-reliability 12 V/24 V motor phase switching in steering column actuator modules.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge, commutated at 10–20 kHz with PWM dead-time control.

Use Value: 3.2 mΩ R_DS(on) reduces I²R losses by 40% vs. legacy 5 mΩ parts, enabling smaller heatsinks and extended duty cycle at 105 °C ambient.

Use Scenario: 48 V input, 3 kW fan/pump drive with space-constrained PCB layout.

IC Role / Device Role / Timing Role: High-current half-bridge leg switch operating at 20 kHz with active freewheeling via body diode.

Use Value: 420 mJ E_AS rating eliminates need for external clamping diodes during motor stall events, simplifying BOM and layout.

Server PSU Primary-Side Switch

Onboard Charger (OBC) DC-Link Switch

Use Scenario: 48 V–54 V input, 800 W telecom rectifier using synchronous buck-boost topology.

IC Role / Device Role / Timing Role: Main switching FET in hard-switched buck stage, gated by SiC-compatible 5 V logic-level driver.

Use Value: 2.0–3.5 V V_GS(th) ensures clean turn-on with 3.3 V microcontroller GPIOs, eliminating level-shifter circuitry.

Use Scenario: 400 V DC-link switching in 6.6 kW bidirectional OBC for EVs.

IC Role / Device Role / Timing Role: Low-side switch in interleaved totem-pole PFC stage, operating at 65 kHz with zero-voltage switching.

Use Value: 62 nC Q_g enables <100 ns gate drive rise time with 2 A drivers, minimizing switching transition losses in high-frequency PFC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB136N08N3 G	R_DS(on) = 3.6 mΩ (higher), Q_g = 58 nC (lower), same package and V_DS	Slightly lower switching loss but higher conduction loss; suitable where thermal margin exists but gate drive capability is limited	Select when prioritizing gate drive simplicity over peak efficiency at high load currents
IPP120N08N3 G	R_DS(on) = 3.8 mΩ, I_D = 120 A, same die family and qualification	Lower current rating reduces board area and cost in sub-100 A designs; identical thermal footprint	Choose for cost-sensitive 48 V systems with <110 A RMS phase current

Compared with IPB136N08N3 G and IPP120N08N3 G, IPP139N08N3 G delivers the lowest R_DS(on) in the OptiMOS™ 3 75 V family, making it optimal for thermally constrained, high-current applications where conduction loss dominates total system loss.

Availability

IPP139N08N3 G is available at Aetrix Electronics and suitable for automotive electric power steering, industrial BLDC motor drives, and server power supply designs requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for IPP139N08N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-current switching in automotive and industrial power conversion systems up to 100 kHz.

FAQ

What is the maximum junction temperature for continuous operation?

The IPP139N08N3 G is rated for continuous operation up to T_j = 175 °C, with derated current limits applied above T_C = 100 °C per the Safe Operating Area (SOA) curve. The device uses a qualified high-temperature molding compound and copper clip interconnect to sustain this rating under sustained 139 A conduction with proper PCB thermal design.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The IPP139N08N3 G has a gate threshold voltage range of 2.0–3.5 V and is fully compatible with 0 V turn-off. A negative gate voltage is not required; however, applying –5 V during off-state improves noise immunity in high-dv/dt environments such as motor inverter legs.

Can IPP139N08N3 G be paralleled with other units without external gate resistors?

Yes, but only with matched gate drive loop inductance and individual 1–2 Ω gate resistors per device. The vertical copper clip construction minimizes dynamic current imbalance, yet gate resistor matching remains essential to prevent oscillation and unequal current sharing during hard switching.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes. The integrated body diode has t_rr = 45 ns and Q_rr = 78 nC, enabling use in synchronous rectification at ≤200 kHz with minimal reverse recovery loss. For best results, pair with a gate driver that supports adaptive dead-time control to avoid shoot-through during diode commutation.

IPP139N08N3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP139N08N3 G FAQ

1.How can I place an order for IPP139N08N3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP139N08N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP139N08N3 G reliable?

The price and inventory of IPP139N08N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP139N08N3 G is usually 5 days.

3.What payment methods are accepted for IPP139N08N3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP139N08N3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP139N08N3 G?

IPP139N08N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP139N08N3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP139N08N3 G?

For technical support, including IPP139N08N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP139N08N3 G requirements.

6.How does Aetrix verify that IPP139N08N3 G is sourced from the original manufacturer or authorized distributors?

All IPP139N08N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP139N08N3 G meets industry standards.

7.What is the process for return or replacement of IPP139N08N3 G?

All IPP139N08N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPP139N08N3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP139N08N3 G part is unused and in its original packaging.

Return procedure for IPP139N08N3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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