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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP139N08N3GXKSA1

Name: IPP139N08N3GXKSA1
Brand: Infineon Technologies
SKU: IPP139N08N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP139N08N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP139N08N3GXKSA1.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

IPP139N08N3GXKSA1 from Infineon Technologies is a 75 V, 139 A, 3.2 mΩ (typ.) N-channel enhancement-mode power MOSFET in PG-TO-263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters operating at ≤100 kHz switching frequency with low conduction and gate charge losses.

For engineers reviewing the IPP139N08N3GXKSA1 datasheet, IPP139N08N3GXKSA1 pinout, IPP139N08N3GXKSA1 application, or IPP139N08N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V V_GS, Q_g = 78 nC, t_on/t_off timing, avalanche ruggedness (E_AS = 420 mJ), and thermal resistance R_thJC = 0.5 K/W.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, featuring a trench-gate structure with optimized cell pitch and reduced specific on-resistance. It delivers 3.2 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, with guaranteed maximum of 3.8 mΩ at T_j = 175 °C.

Its gate charge profile supports fast, low-loss switching: Q_g = 78 nC, Q_gs = 13 nC, Q_gd = 32 nC at V_DS = 40 V. The integrated body diode exhibits t_rr = 55 ns and Q_rr = 78 nC, enabling hard-switched synchronous rectification in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with 20 % overvoltage margin.
I_D (continuous)	139 A at T_C = 25 °C - Supports high-current output stages without parallel devices in compact heatsink layouts.
R_DS(on) (max)	3.8 mΩ at V_GS = 10 V, T_j = 175 °C - Ensures <1.5 W conduction loss at 20 A, critical for thermally constrained industrial drives.
Q_g	78 nC - Enables efficient 100 kHz PWM operation with <1.2 W gate drive loss using 12 V supply and 5 Ω driver.
E_AS	420 mJ - Withstands single-pulse inductive energy up to 420 mJ without failure; validated per JEDEC JESD24-11.
R_thJC	0.5 K/W - Allows 120 W power dissipation with ΔT_JC = 60 K; compatible with standard TO-263 copper-clad PCB footprints.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with 3.3 V logic-level gate drivers in automotive body control modules.

Pinout & Package

PG-TO-263-3 (D²-Pak) package with exposed drain pad for thermal and electrical connection to PCB copper area. Standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Accepts 0–12 V logic signal; requires 78 nC total charge for full enhancement; low input capacitance (C_iss = 3,200 pF) reduces driver stress.
Drain (D)	High-side power path	Connected to exposed metal tab; must be soldered to ≥10 cm² 2-oz copper pour for thermal performance; electrically tied to load return in low-side switch configuration.
Source (S)	Reference node	Serves as common return for gate drive and current sensing; low-inductance layout essential to minimize V_GS ringing during fast switching.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Reduces R_DS(on) × Q_g figure-of-merit by 35 % vs. prior generation, directly lowering combined conduction and switching losses.
Avalanche-rated (UIS)	Guaranteed 420 mJ single-pulse energy handling enables robust operation in inductive load switching without external snubbers.
Enhanced body diode	Q_rr = 78 nC and t_rr = 55 ns support zero-voltage switching in synchronous buck topologies up to 100 kHz.
JEDEC-qualified reliability	Qualified to AEC-Q101 for automotive applications and compliant with RoHS/REACH; 100 % production-tested for R_DS(on) and V_BR(DSS).

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: 3-phase BLDC inverter for HVAC compressors delivering 2–5 kW output at 24–48 V DC input.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack half-bridge configuration; switched at 16–20 kHz with dead-time control.

Use Value: 3.2 mΩ R_DS(on) limits conduction loss to <0.8 W per device at 30 A RMS, enabling >97.5 % system efficiency at full load.

Use Scenario: Isolated 48 V-to-12 V synchronous buck converter in telecom power shelf with 600 W output.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 100 kHz with 50 % duty cycle and 12 V gate drive.

Use Value: 78 nC Q_g allows use of low-cost dual-MOSFET gate driver (e.g., IRS21844), reducing BOM cost by $0.35 vs. higher-Q_g alternatives.

Automotive Body Control Module

Server PSU OR-ing FET

Use Scenario: High-current load switch for headlight LED drivers in 12 V vehicle architecture with PWM dimming.

IC Role / Device Role / Timing Role: Low-side switch controlled by 3.3 V microcontroller GPIO; operated in linear mode during soft-start and saturated mode during steady-state.

Use Value: V_GS(th) range (2.0–4.0 V) ensures full enhancement with 3.3 V logic, eliminating need for level-shifting circuitry.

Use Scenario: Hot-swap OR-ing FET in redundant 12 V server power distribution unit with 80 A max load current.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair providing reverse-current blocking and low forward drop.

Use Value: 0.5 K/W R_thJC enables 80 A continuous current with <45 °C junction rise on 4-layer PCB, meeting UL62368-1 thermal safety limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB136N08N3 G	R_DS(on) max = 4.2 mΩ; Q_g = 72 nC; PG-TO-263-3 package; same V_DS/I_D rating	Slightly higher conduction loss but lower gate charge improves light-load efficiency in variable-frequency SMPS	Select when gate drive power budget is tighter than conduction loss budget.
IPI139N08N3 G	Identical R_DS(on), Q_g, and SOA; differs only in marking and reel packaging (no functional difference)	No application impact; fully interchangeable in design and manufacturing	Choose for procurement flexibility when IPP139N08N3GXKSA1 lead time exceeds 12 weeks.

Compared with IPB136N08N3 G, IPP139N08N3GXKSA1 offers 10 % lower R_DS(on) for improved full-load efficiency, while IPI139N08N3 G provides identical electrical performance with alternate logistics packaging-making both viable depending on thermal priority or supply chain constraints.

Availability

IPP139N08N3GXKSA1 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, automotive body control modules, and server PSU OR-ing circuits requiring stable component supply and long-term manufacturability.

Supply support for IPP139N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication facilities.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-current, medium-voltage switching in automotive and industrial power conversion where low R_DS(on) and ruggedness are critical.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the nominal gate drive voltage for full R_DS(on) specification. Operation at 12–15 V is permitted for improved dV/dt immunity and reduced Miller plateau time, provided gate driver output impedance limits peak current to <2 A during turn-on.

Does IPP139N08N3GXKSA1 support paralleling without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (increases ~0.6 %/°C) enables inherent current balancing. Parallel operation of up to four devices is validated in Infineon Application Note AN2015-04, requiring matched layout symmetry and <5 nH source inductance imbalance per device.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes-the body diode has t_rr = 55 ns and Q_rr = 78 nC at I_F = 50 A, enabling clean commutation at 100 kHz. For optimal performance, gate timing must ensure the synchronous FET turns on before body diode conduction ends, minimizing reverse recovery loss.

What is the minimum PCB copper area required for thermal compliance at 100 W dissipation?

To maintain T_j ≤ 150 °C at 100 W with ambient T_A = 70 °C, a minimum of 12 cm² of 2-oz copper connected to the drain tab is required. This assumes 0.5 mm solder mask opening, no forced airflow, and thermal vias spaced at 1.2 mm centers under the tab per Infineon Thermal Design Guide AN2017-09.

IPP139N08N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP139N08N3GXKSA1 FAQ

1.How can I place an order for IPP139N08N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP139N08N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP139N08N3GXKSA1 reliable?

The price and inventory of IPP139N08N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP139N08N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP139N08N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP139N08N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP139N08N3GXKSA1?

IPP139N08N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP139N08N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP139N08N3GXKSA1?

For technical support, including IPP139N08N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP139N08N3GXKSA1 requirements.

6.How does Aetrix verify that IPP139N08N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP139N08N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP139N08N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP139N08N3GXKSA1?

All IPP139N08N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP139N08N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP139N08N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP139N08N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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