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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP13N03LB G

Name: IPP13N03LB G
Brand: Infineon Technologies
SKU: IPP13N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP13N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP13N03LB G.pdf

Description:: MOSFET N-CH 30V 30A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,028

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Product details

Overview

IPP13N03LB G from Infineon Technologies is a 30 V, logic-level N-channel Power MOSFET in PG-TO220-3-1 package, optimized for high-frequency DC/DC converters. It delivers R_DS(on) = 12.8 mΩ (max) at V_GS = 10 V and I_D = 30 A, supports 175 °C operation, and features dv/dt ruggedness (6 kV/µs) and low gate charge (Q_g = 8–10 nC).

For engineers reviewing the IPP13N03LB G datasheet, IPP13N03LB G pinout, IPP13N03LB G application, or IPP13N03LB G equivalent, key selection criteria include its 12.8 mΩ on-resistance at 10 V drive, 175 °C junction rating, JEDEC-qualified reliability for power conversion, and optimized FOM (Q_g × R_DS(on)) for synchronous rectification and primary-side switching.

Technical Context

This OptiMOS®2 device uses planar silicon technology with optimized cell pitch and trench-assisted gate structure to achieve low R_DS(on) and fast switching. Its gate threshold voltage (1.2–2.0 V typ.) enables direct logic-level drive from 3.3 V or 5 V controllers, and its 6 kV/µs dv/dt rating ensures robustness against parasitic turn-on in hard-switched topologies.

The MOSFET integrates a low-Q_rr (≤10 nC), fast-recovery body diode suitable for synchronous rectification. Thermal resistance R_thJC = 2.9 K/W allows 47 A continuous current capability when thermally limited by chip, not bondwire - though rated I_D is specified at 30 A based on package constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) max	12.8 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1.3 W conduction loss at 30 A
Q_g	8–10 nC - Low gate drive energy supports >1 MHz switching in LLC or buck converters
dv/dt rating	6 kV/µs - Confirmed immunity to false turn-on in high-dV/dt environments
T_j max	175 °C - Sustains full performance in sealed industrial enclosures without derating
E_AS	64 mJ - Withstands single-pulse inductive energy without failure in flyback snubbers
C_iss	1019–1355 pF - Predictable Miller effect for gate driver sizing and EMI filtering

Pinout & Package

IPP13N03LB G uses the PG-TO220-3-1 package: insulated plastic case with 3 leads, vertical mounting orientation, and drain-connected tab for direct heatsink attachment. Thermal path optimized via low R_thJC = 2.9 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return node	Low-inductance source connection for gate driver loop closure and current sensing
Pin 2 (Gate)	Control input	Logic-level compatible; requires ≤2.2 nC Q_g(th) to cross threshold reliably
Pin 3 (Drain)	Main power output	Internally connected to metal tab - must be electrically isolated from heatsink unless floating topology

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V microcontrollers and PWM ICs
Optimized FOM (Q_g × R_DS(on))	~102 nC·mΩ - balances switching loss vs. conduction loss for 300 kHz–1 MHz operation
dv/dt ruggedness	6 kV/µs - validated per JEDEC JESD22-A114 for reliable operation in noisy power stages
Body diode Q_rr	≤10 nC - reduces reverse recovery loss and EMI in synchronous rectifier configurations
Pb-free & RoHS compliant	Lead plating meets EU Directive 2011/65/EU - no exemption required for lead content

Applications

Server VRM

Automotive DC/DC

Use Scenario: 48 V–12 V intermediate bus converter in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in multiphase buck regulator.

Use Value: 12.8 mΩ R_DS(on) minimizes conduction loss at 60 A per phase; 175 °C rating avoids thermal throttling under sustained load.

Use Scenario: 48 V–12 V bidirectional converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of isolated forward converter.

Use Value: Low Q_rr (≤10 nC) and fast t_f (2.8–4.2 ns) reduce reverse recovery loss and improve efficiency above 200 kHz.

Industrial SMPS

Telecom Rectifier

Use Scenario: 3 kW AC/DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: Clamp switch handling repetitive avalanche stress during reset.

Use Value: 64 mJ E_AS rating ensures reliable clamping without external snubber, reducing component count.

Use Scenario: High-density 48 V telecom rectifier module with distributed power architecture.

IC Role / Device Role / Timing Role: OR-ing FET in hot-swap and redundancy circuits.

Use Value: Logic-level V_GS(th) enables fast turn-on with minimal gate drive overhead; 30 A I_D supports parallel configuration for >100 A systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N04S4-02	40 V V_DS, 1.9 mΩ R_DS(on), TSDSON-8 package	SMT-only; unsuitable for through-hole heatsink mounting	Prefer for high-density board space-constrained designs where thermal mass is managed via PCB copper
IRF3709ZCPBF	30 V V_DS, 13.5 mΩ R_DS(on), TO-220AB package, non-JEDEC qualified	No dv/dt rating or avalanche spec published; lower thermal robustness (R_thJC = 3.5 K/W)	Acceptable only in cost-sensitive, non-critical consumer applications with conservative layout

Compared with IPB120N04S4-02 and IRF3709ZCPBF, IPP13N03LB G uniquely combines JEDEC qualification, 6 kV/µs dv/dt immunity, and TO220-compatible thermal interface - making it the only choice for industrial-grade 30 V switching where reliability and thermal management are co-constrained.

Availability

IPP13N03LB G is available at Aetrix Electronics and suitable for server VRMs, automotive DC/DC converters, and industrial SMPS requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IPP13N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®2 product line - engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

Is IPP13N03LB G suitable for synchronous rectification?

Yes. Its low Q_rr (≤10 nC), fast t_f (2.8–4.2 ns), and logic-level V_GS(th) (1.2–2.0 V) enable efficient synchronous rectification in forward and LLC converters up to 1 MHz. The body diode's soft recovery behavior further reduces EMI and ringing during commutation.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 30 A at both T_C = 25 °C and T_C = 100 °C. This reflects bondwire-limited rating rather than thermal limitation - the chip itself can sustain 47 A at T_C = 25 °C given R_thJC = 2.9 K/W, but package construction constrains rated current to 30 A across the full case temperature range.

Does IPP13N03LB G require a gate resistor for stability?

A gate resistor (typically 2.7 Ω, as used in characterization) is recommended to dampen gate oscillation and control dV/dt during turn-on/off. The device's R_G = 1 Ω internal gate resistance and C_iss/C_rss ratio make it susceptible to ringing without external gate control, especially in high-di/dt layouts.

Can IPP13N03LB G replace IPP12N03L in existing designs?

Yes, with verification. Both share identical PG-TO220-3-1 package and 30 V rating, but IPP13N03LB G offers lower R_DS(on) (12.8 mΩ vs. 14.5 mΩ), higher I_D (30 A vs. 28 A), and improved dv/dt rating (6 kV/µs vs. 4.5 kV/µs). Layout and thermal design remain compatible, but gate drive timing may need minor adjustment due to reduced Q_g.

IPP13N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1355 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP13N03LB G FAQ

1.How can I place an order for IPP13N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP13N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP13N03LB G reliable?

The price and inventory of IPP13N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP13N03LB G is usually 5 days.

3.What payment methods are accepted for IPP13N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP13N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP13N03LB G?

IPP13N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP13N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP13N03LB G?

For technical support, including IPP13N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP13N03LB G requirements.

6.How does Aetrix verify that IPP13N03LB G is sourced from the original manufacturer or authorized distributors?

All IPP13N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP13N03LB G meets industry standards.

7.What is the process for return or replacement of IPP13N03LB G?

All IPP13N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPP13N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP13N03LB G part is unused and in its original packaging.

Return procedure for IPP13N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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