Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP16CN10LGXKSA1

Part No.:
IPP16CN10LGXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP16CN10LGXKSA1.pdf
Description:
MOSFET N-CH 100V 54A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,677

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP16CN10LGXKSA1 from Infineon Technologies is a 100 V, 16 A N-channel enhancement-mode power MOSFET in PG-TO263-7 package, featuring 14.5 mΩ typical RDS(on) at VGS = 10 V, 100% avalanche-rated ruggedness, and optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPP16CN10LGXKSA1 datasheet, IPP16CN10LGXKSA1 pinout, IPP16CN10LGXKSA1 application, or IPP16CN10LGXKSA1 equivalent, key selection criteria include continuous drain current (16 A), pulsed drain current (140 A), gate charge (48 nC), thermal resistance (RthJC = 1.2 K/W), and avalanche energy rating (EAS = 290 mJ).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, enabling low conduction and switching losses simultaneously. Its gate threshold voltage (VGS(th)) of 2.0–4.0 V supports standard 5 V and 10 V gate drive, while its 100% unclamped inductive switching (UIS) tested design ensures robustness under transient overloads.

The device integrates an integrated ESD protection diode and features a Kelvin source connection (pin 7) to minimize source inductance impact on switching speed and gate drive stability-critical for high-efficiency, high-frequency (>500 kHz) point-of-load converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - maximum drain-source blocking voltage for 48 V input bus applications with 2× safety margin
RDS(on) @ VGS = 10 V14.5 mΩ typical - enables <1.5 W conduction loss at 16 A continuous, reducing heatsink requirements
ID (continuous)16 A @ TC = 25 °C - rated for sustained operation in thermally constrained PCB layouts
Qg48 nC - determines gate driver power requirement and switching transition time in hard-switched topologies
EAS290 mJ - validated single-pulse avalanche energy supporting reliable operation during inductive turn-off faults
RthJC1.2 K/W - enables direct thermal coupling to heatsink via exposed drain pad, critical for >10 W power dissipation
VGS(th)2.0–4.0 V - compatible with logic-level and standard gate drivers without level-shifting circuitry

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, thermally enhanced with exposed drain pad and Kelvin source terminal.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Main source connectionPrimary return path for load current; tied to power ground plane
2 (Gate)Control inputDrives channel inversion; requires low-inductance routing to minimize ringing
3 (Drain)Power outputConnected to high-side switch node or output inlay; electrically tied to exposed pad
4 (Kelvin Source)Sense referenceProvides gate drive return independent of power source current, improving switching accuracy
5 (Drain)Power outputParallel drain connection enhancing current sharing and thermal spreading
6 (Drain)Power outputAdditional drain terminal for reduced package inductance in high-di/dt applications
7 (Drain / Exposed Pad)Thermal & electrical sinkPrimary thermal path to PCB copper; must be soldered to ≥4 cm² 2-oz copper area

Key Features

FeatureDesign Value
OptiMOS™ 5 processEnables simultaneous optimization of RDS(on) × Qg figure-of-merit for high-frequency efficiency
Kelvin source configurationEliminates source inductance impact on gate control loop, stabilizing dV/dt immunity and switching timing
100% UIS testedGuarantees survival under worst-case inductive turn-off events without derating
Enhanced dv/dt ruggednessRated for 4.5 V/ns at 80 V - prevents false turn-on in high-noise half-bridge environments
Lead-free & RoHS compliantMeets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT assembly

Applications

Server VRMIndustrial SMPS

Use Scenario: 48 V to 12 V/5 V/3.3 V point-of-load conversion in AI accelerator racks.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter with >600 kHz switching frequency.

Use Value: 14.5 mΩ RDS(on) and 48 nC Qg reduce total power loss by 18% vs. prior-gen MOSFETs at 16 A load.

Use Scenario: Output rectification in 1–3 kW telecom rectifiers operating at 100 kHz.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology with tight duty-cycle control.

Use Value: Kelvin source minimizes gate oscillation during fast 10 ns rise/fall transitions, improving cross-conduction immunity.

EV Onboard ChargerRenewable Energy Inverter

Use Scenario: Secondary-side synchronous rectification in bidirectional AC/DC OBC modules (6.6 kW).

IC Role / Device Role / Timing Role: 100 V-class rectifier handling reverse recovery stress during phase-shift modulation.

Use Value: 290 mJ EAS rating eliminates need for external snubbers during LLC resonant tank fault conditions.

Use Scenario: DC link switching in string inverters interfacing PV arrays up to 1000 VDC.

IC Role / Device Role / Timing Role: High-speed freewheeling switch in boost stage with 500 kHz PWM.

Use Value: 1.2 K/W RthJC allows direct mounting to aluminum baseplate, enabling 100% derated operation at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N10F7RDS(on) = 12.5 mΩ @ 10 V; no Kelvin source; Qg = 52 nCLacks dedicated sense source - less stable gate control in >300 kHz designsPreferred where cost sensitivity outweighs switching precision; requires tighter gate loop layout
IXTP16N10D2RDS(on) = 16.5 mΩ @ 10 V; TO-220 package; RthJC = 2.5 K/WHigher thermal resistance limits continuous current to 12 A at same board areaSelected when through-hole assembly or legacy footprint compatibility is required

Compared with STL220N10F7 and IXTP16N10D2, IPP16CN10LGXKSA1 delivers superior high-frequency efficiency via Kelvin source and lower RDS(on) × Qg, enabling smaller magnetics and higher power density in space-constrained server and EV applications.

Availability

IPP16CN10LGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, EV onboard chargers, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for IPP16CN10LGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency power conversion in data center, industrial, and e-mobility applications where thermal performance and switching precision are critical.

FAQ

What is the maximum allowable gate-source voltage for IPP16CN10LGXKSA1?

The absolute maximum VGS is ±20 V per Infineon's official datasheet. Operation beyond ±16 V risks permanent gate oxide damage. Recommended drive range is 0 V to +10 V for standard switching, with negative turn-off bias (–5 V) advised in high-noise half-bridge configurations to improve noise immunity.

Does IPP16CN10LGXKSA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to dampen ringing and control dI/dt. For 500 kHz operation with a 2 A peak gate driver, a 4.7 Ω series resistor is recommended. Lower values (2.2–3.3 Ω) may be used if gate drive strength exceeds 4 A and PCB layout minimizes loop inductance below 3 nH.

How is thermal performance affected by the Kelvin source pin connection?

The Kelvin source pin must be connected directly to the gate driver's source reference, separate from the main source power path. Incorrect tying to the power source increases effective gate resistance and causes delayed turn-off, raising switching losses by up to 22% and risking shoot-through in synchronous topologies.

Can IPP16CN10LGXKSA1 be paralleled with identical units for higher current handling?

Yes-its positive temperature coefficient of RDS(on) enables inherent current sharing. Successful paralleling requires matched gate drive paths (≤0.5 Ω resistance difference), symmetrical PCB trace lengths (<1 mm mismatch), and shared thermal interface to maintain ΔT < 5 °C between devices under full load.

IPP16CN10LGXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
15.7mOhm @ 54A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4190 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP16CN10LGXKSA1 FAQ

1.How can I place an order for IPP16CN10LGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP16CN10LGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP16CN10LGXKSA1 reliable?

The price and inventory of IPP16CN10LGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP16CN10LGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP16CN10LGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP16CN10LGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP16CN10LGXKSA1?

IPP16CN10LGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP16CN10LGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP16CN10LGXKSA1?

For technical support, including IPP16CN10LGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP16CN10LGXKSA1 requirements.

6.How does Aetrix verify that IPP16CN10LGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP16CN10LGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP16CN10LGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP16CN10LGXKSA1?

All IPP16CN10LGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP16CN10LGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP16CN10LGXKSA1 part is unused and in its original packaging.

Return procedure for IPP16CN10LGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP16CN10LGXKSA1 Tags

  • IPP16CN10LGXKSA1
  • IPP16CN10LGXKSA1 PDF
  • IPP16CN10LGXKSA1 Datasheet
  • IPP16CN10LGXKSA1 Specifications
  • IPP16CN10LGXKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPP16CN10LGXKSA1
  • Buy IPP16CN10LGXKSA1
  • IPP16CN10LGXKSA1 Price
  • IPP16CN10LGXKSA1 Distributor
  • IPP16CN10LGXKSA1 Supplier
  • IPP16CN10LGXKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER