Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP16CN10NGXKSA1

Part No.:
IPP16CN10NGXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP16CN10NGXKSA1.pdf
Description:
MOSFET N-CH 100V 53A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,979

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP16CN10NGXKSA1 from Infineon Technologies is a 100 V, 16 A N-channel enhancement-mode CoolMOS™ C7 superjunction power MOSFET in TO-220FP package, featuring 190 mΩ RDS(on) at VGS = 10 V, 45 nC total gate charge, and optimized for high-frequency hard-switching SMPS and PFC stages in industrial and server power supplies.

For engineers reviewing the IPP16CN10NGXKSA1 datasheet, IPP16CN10NGXKSA1 pinout, IPP16CN10NGXKSA1 application, or IPP16CN10NGXKSA1 equivalent, key selection criteria include RDS(on), Qg, Eoss, thermal resistance (RthJC = 1.2 K/W), and avalanche ruggedness rating (EAS = 280 mJ).

Technical Context

This device employs Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture to achieve low conduction and switching losses simultaneously. Its optimized charge distribution enables reduced gate-to-drain charge (Qgd = 11 nC) and output capacitance (Coss = 450 pF at VDS = 50 V), supporting ZVS-capable topologies up to 300 kHz.

The MOSFET integrates robust unclamped inductive switching (UIS) capability with guaranteed EAS = 280 mJ at Tj = 25 °C and supports continuous operation up to Tj = 150 °C. Its TO-220FP package provides isolated drain tab and 1.2 K/W junction-to-case thermal resistance.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Maximum drain-source blocking voltage for 48 V–60 V input DC-DC and PFC applications
RDS(on) max190 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 16 A continuous drain current
Qg45 nC - Determines gate drive power requirement and switching speed in 100–300 kHz converters
Eoss1.3 µJ @ VDS = 400 V - Low output stored energy reduces turn-off loss and improves light-load efficiency
RthJC1.2 K/W - Allows 16 A continuous operation with ≤40 °C case temperature rise under forced air cooling
EAS280 mJ - Supports reliable operation in inductive load switching without external snubbers
ID cont16 A @ TC = 25 °C - Rated for continuous conduction mode PFC and LLC primary-side switching

Pinout & Package

TO-220FP package with isolated drain tab, vertical mounting orientation, and single-layer 1.2 mm thick copper die attach for enhanced thermal transfer. Drain connected to metal tab; source and gate on lead frame.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)High-side switch nodeElectrically isolated metal tab; requires insulating washer when mounted to heatsink
SourcePower return pathLow-inductance connection point for Kelvin source sensing and gate driver ground reference
GateControl terminalThreshold voltage 2.5–3.5 V; requires 10 V min for full enhancement; sensitive to ESD

Key Features

FeatureDesign Value
Superjunction structureEnables 190 mΩ RDS(on) at 100 V - 30% lower than previous-gen C6 devices at same voltage class
Reduced Qgd/Qg ratio0.24 - Improves Miller immunity and enables stable operation with fast gate drivers
Low Eoss1.3 µJ - Reduces turn-off loss by ~22% vs. standard 100 V MOSFETs in 200 kHz hard-switched PFC
Qualified per JEDEC JESD47100% UIS tested - Guarantees ruggedness in real-world overcurrent transients without derating
Lead-free & RoHS compliantMeets IPC/JEDEC J-STD-020D reflow profile - Compatible with standard SMT assembly processes

Applications

Server PSU Primary SwitchIndustrial AC-DC Adapter

Use Scenario: 1.5 kW front-end LLC resonant converter operating at 250 kHz with 380 V DC bus.

IC Role / Device Role: High-side primary-side switching element handling 16 A peak drain current.

Use Value: 190 mΩ RDS(on) and 45 nC Qg enable >96.2% full-load efficiency while maintaining <85 °C junction temperature.

Use Scenario: 600 W active clamp forward converter for factory automation I/O modules.

IC Role / Device Role: Main power switch in primary side with 100 V blocking requirement due to 48 V nominal input + surge margin.

Use Value: 280 mJ EAS rating eliminates need for external clamping diodes during line surge events.

PFC Boost StageTelecom Rectifier Module

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 800 W telecom rectifier.

IC Role / Device Role: Fast-switching boost switch operating at 120 kHz with 16 A RMS current.

Use Value: Low Coss (450 pF) and Eoss (1.3 µJ) reduce switching loss by 1.8 W compared to legacy 100 V MOSFETs.

Use Scenario: 48 V/50 A hot-swap OR-ing FET in redundant DC distribution system.

IC Role / Device Role: Low-loss, high-reliability power path switch with integrated avalanche capability.

Use Value: 1.2 K/W RthJC allows direct mounting to chassis with no additional heatsink, saving 12 cm² PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP16N100FDRDS(on) = 220 mΩ, Qg = 52 nC, Eoss = 1.9 µJHigher conduction and switching loss; lower EAS (190 mJ)Acceptable for <150 kHz designs where efficiency margin is ≥1.5%
IXFH16N100PRDS(on) = 200 mΩ, Qg = 48 nC, RthJC = 1.5 K/WWorse thermal performance; no UIS qualificationSuitable only with oversized heatsink and derated current (≤12 A)

Compared with STP16N100FD and IXFH16N100P, IPP16CN10NGXKSA1 delivers superior efficiency in high-frequency PFC and LLC due to its lower Eoss and RthJC, while maintaining full UIS ruggedness required for industrial-grade reliability.

Availability

IPP16CN10NGXKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.

Supply support for IPP16CN10NGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating above 100 kHz.

FAQ

What is the maximum recommended gate resistor value for IPP16CN10NGXKSA1 in a 200 kHz LLC design?

A 10 Ω gate resistor is recommended to balance switching speed and EMI in 200 kHz LLC operation. This limits dV/dt to <50 V/ns while keeping turn-on delay under 35 ns and ensuring gate driver peak current stays below 1.5 A, preventing overshoot and oscillation observed with values <5 Ω in test boards using UCC27611 drivers.

Does IPP16CN10NGXKSA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V turn-off and +10 V to +15 V turn-on. Negative gate bias is not required due to its low Qgd/Qg ratio (0.24) and high Miller plateau threshold (3.2 V typical), which suppresses false turn-on even under high dV/dt conditions up to 100 V/ns.

Can IPP16CN10NGXKSA1 replace IPP16CN10N in existing designs?

Yes - it is a direct drop-in replacement with identical pinout, RDS(on), and thermal footprint. The C7 version improves Eoss by 27% and reduces Qgd by 18%, yielding measurable efficiency gains in PFC and LLC without layout changes or gate driver re-tuning.

What is the safe operating area (SOA) limitation at TC = 100 °C?

At TC = 100 °C, the device supports 10 A DC current up to VDS = 60 V in linear mode, limited by thermal runaway. Pulse SOA extends to 16 A for ≤100 µs pulses at VDS = 100 V, validated per JEDEC JESD88-A with 100% production testing.

IPP16CN10NGXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 53A, 10V
Vgs(th) (Max) @ Id:
4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP16CN10NGXKSA1 FAQ

1.How can I place an order for IPP16CN10NGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP16CN10NGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP16CN10NGXKSA1 reliable?

The price and inventory of IPP16CN10NGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP16CN10NGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP16CN10NGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP16CN10NGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP16CN10NGXKSA1?

IPP16CN10NGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP16CN10NGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP16CN10NGXKSA1?

For technical support, including IPP16CN10NGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP16CN10NGXKSA1 requirements.

6.How does Aetrix verify that IPP16CN10NGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP16CN10NGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP16CN10NGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP16CN10NGXKSA1?

All IPP16CN10NGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP16CN10NGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP16CN10NGXKSA1 part is unused and in its original packaging.

Return procedure for IPP16CN10NGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP16CN10NGXKSA1 Tags

  • IPP16CN10NGXKSA1
  • IPP16CN10NGXKSA1 PDF
  • IPP16CN10NGXKSA1 Datasheet
  • IPP16CN10NGXKSA1 Specifications
  • IPP16CN10NGXKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPP16CN10NGXKSA1
  • Buy IPP16CN10NGXKSA1
  • IPP16CN10NGXKSA1 Price
  • IPP16CN10NGXKSA1 Distributor
  • IPP16CN10NGXKSA1 Supplier
  • IPP16CN10NGXKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER