Infineon Technologies IPP16CNE8N G

Overview

IPP16CNE8N G from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 85 V V_DS, 53 A continuous drain current at T_C = 25 °C, and 16.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 53 A. It supports 175 °C junction operation and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server PSUs.

For engineers reviewing the IPP16CNE8N G datasheet, IPP16CNE8N G pinout, IPP16CNE8N G application, or IPP16CNE8N G equivalent, key selection criteria include its 1.5 K/W R_thJC, 36–48 nC total gate charge, 110 ns reverse recovery time, and JEDEC-qualified reliability for industrial power systems.

Technical Context

This MOSFET employs trench-based OptiMOS™2 technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM), enabling efficient hard-switching up to several hundred kHz. Its 5.6 V gate plateau voltage and 33–65 S transconductance support stable drive under varying load and temperature conditions.

The device integrates a robust body diode with 210 nC Q_rr and 110 ns t_rr, enabling reliable synchronous rectification without external Schottky diodes. Thermal design is facilitated by a defined 1.5 K/W junction-to-case resistance and compatibility with standard TO-220 heatsinking footprints.

Key Specifications

Pinout & Package

IPP16CNE8N G uses the PG-TO220-3 package: isolated tab (drain), three leads - Gate (pin 1), Drain (pin 2, tab-connected), Source (pin 3). The metal tab is electrically connected to the drain terminal and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB16CNE8N G and IPI16CNE8N G, IPP16CNE8N G offers identical silicon performance but differs in package isolation (insulated tab), mounting method (through-hole), and thermal interface geometry-making it optimal for high-voltage isolation-critical 48 V–60 V power stages where creepage/clearance must be maintained.

Availability

IPP16CNE8N G is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, motor drive inverters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPP16CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and wafer fabrication infrastructure.

This part belongs to the OptiMOS™2 power transistor product line, designed specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for IPP16CNE8N G?

The absolute maximum gate-source voltage is ±20 V. Operation above +20 V risks oxide breakdown, while negative voltage beyond –20 V may cause gate damage. Recommended drive range is 0 V to +10 V for reliable enhancement and minimal Miller-induced shoot-through risk in half-bridge configurations.

Does IPP16CNE8N G have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic parasitic body diode with 53 A continuous forward current rating, 212 A pulsed capability, 1.0–1.2 V forward voltage at 53 A and 25 °C, and 110 ns reverse recovery time. These values are measured under standardized conditions (V_R = 40 V, dI/dt = 100 A/µs) and support synchronous rectification without external diodes.

Can IPP16CNE8N G be used in avalanche-rated circuits?

Yes - it is characterized for single-pulse avalanche energy of 107 mJ at I_D = 53 A and R_GS = 25 Ω. This rating applies only to unclamped inductive switching (UIS) events with defined test conditions; repetitive avalanche operation is not guaranteed and requires system-level validation.

What is the thermal resistance from junction to case, and how should it be applied in heatsink design?

R_thJC is 1.5 K/W, measured from die junction to the center of the drain tab surface. For heatsink sizing, this value must be combined with R_thCS (case-to-sink, dependent on thermal interface material) and R_thSA (sink-to-ambient) to calculate total thermal resistance and ensure T_j remains ≤175 °C under worst-case power dissipation.