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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP200N15N3GHKSA1

Name: IPP200N15N3GHKSA1
Brand: Infineon Technologies
SKU: IPP200N15N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP200N15N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP200N15N3GHKSA1.pdf

Description:: MOSFET N-CH 150V 50A TO220-3

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Product details

Overview

IPP200N15N3GHKSA1 from Infineon Technologies is a 150 V, 50 A N-channel enhancement-mode MOSFET in PG-TO220-3 package, featuring 20 mΩ max R_DS(on) at V_GS = 10 V, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPP200N15N3GHKSA1 datasheet, IPP200N15N3GHKSA1 pinout, IPP200N15N3GHKSA1 application, or IPP200N15N3GHKSA1 equivalent, key selection criteria include its 150 V V_(BR)DSS, 20 mΩ R_DS(on), 23–31 nC total gate charge, 175 °C thermal rating, and TO-220 footprint compatibility with industrial power supplies and motor drives.

Technical Context

This OptiMOS™3 device uses trench-gate silicon technology to achieve low conduction loss and fast switching performance. Its 5 nC reverse transfer capacitance (C_rss) and 214 pF output capacitance (C_oss) support efficient hard-switching up to several hundred kHz.

The integrated body diode delivers 106 ns reverse recovery time and 332 nC Q_rr at I_F = 50 A, enabling reliable synchronous rectification without external Schottky diodes in 12 V/48 V intermediate bus converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	150 V - Withstands 120 V DC bus with 25 % margin for transient overvoltage in telecom and server PSUs
R_DS(on) max	20 mΩ @ V_GS = 10 V - Enables ≤1 W conduction loss at 50 A continuous drain current
I_D cont	50 A @ T_C = 25 °C - Supports high-current output stages in 500–1000 W isolated DC-DC modules
Q_g total	23–31 nC - Determines gate driver power requirement and switching loss trade-off at 300–500 kHz
t_r/t_f	11–17 ns / 6–9 ns - Enables clean voltage transitions with minimal EMI in compact layouts
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating
E_AS	170 mJ - Sustains single-pulse avalanche energy during inductive turn-off faults in motor control

Pinout & Package

IPP200N15N3GHKSA1 is housed in PG-TO220-3 package: through-hole, insulated tab, vertical mounting, standard TO-220 outline with drain-connected tab for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <20 V drive; sensitive to ESD and ringing
Pin 3 (Drain)	Power output	Internally connected to metal tab; must be electrically isolated from heatsink unless floating

Key Features

Feature	Design Value
N-channel normal-level logic	Turns on fully with standard 10 V gate drive - eliminates need for level-shifting in low-side switch applications
Optimized FOM (Q_g × R_DS(on))	~0.6 nC·Ω - balances switching loss and conduction loss for 300–600 kHz operation
175 °C rated junction	Enables full 50 A current capability at 100 °C case temperature - reduces heatsink size by ~30 % vs. 150 °C-rated parts
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 - supports lead-free reflow and environmental compliance programs

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: Final buck stage delivering 12 V @ 40–60 A to CPU/GPU cores in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 400–500 kHz with adaptive gate timing.

Use Value: 20 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 30 mΩ devices, improving full-load efficiency by 0.8–1.2 %.

Use Scenario: 48 V-to-12 V isolated forward converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to reduce forward drop and thermal stress.

Use Value: Integrated body diode with 1.0–1.2 V V_SD enables zero-voltage switching assist, lowering diode conduction loss by >40 %.

Motor Drive Half-Bridge

Telecom Rectifier Module

Use Scenario: 24 V BLDC motor control in automated guided vehicle (AGV) traction inverter.

IC Role / Device Role / Timing Role: High-current low-side switch in 3-phase half-bridge with 10–20 kHz PWM.

Use Value: 175 °C rating allows sustained 50 A operation at 85 °C ambient without forced air, simplifying thermal design.

Use Scenario: 380 V DC input rectifier stage in 48 V telecom backup system with active OR-ing.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier in LLC resonant converter secondary side.

Use Value: 150 V V_(BR)DSS provides 20 % margin over 120 V reflected voltage, ensuring robustness against transformer leakage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB200N15N3G	Same die, PG-TO263-3 package; lower R_thJC (0.8 K/W vs. 1.0 K/W); surface-mount only	Better suited for high-density, automated assembly; requires PCB copper area for thermal relief	Select when board space is constrained and reflow soldering is available
IPP200N15N3GXKSA1	Same die and TO-220-3 package; non-halogen version per older spec; identical electrical specs	No functional difference; used in legacy designs where halogen-free was not required	Select only if compliance documentation mandates pre-2014 halogen specification

Compared with IPB200N15N3G, IPP200N15N3GHKSA1 offers through-hole reliability and simpler thermal interface but higher R_thJC; versus IPP200N15N3GXKSA1, it adds halogen-free compliance without sacrificing performance or footprint.

Availability

IPP200N15N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, motor drive inverters, and telecom rectifier modules requiring stable component supply and long-term lifecycle assurance.

Supply support for IPP200N15N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 family, engineered for high-efficiency, high-frequency power conversion in server, telecom, and industrial SMPS applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum recommended gate resistor for IPP200N15N3GHKSA1 in 500 kHz switching?

A 1.6 Ω external gate resistor is validated in the datasheet for 50 A switching at 500 kHz with V_DD = 75 V. Using ≥2.2 Ω increases turn-on delay beyond 21 ns and may cause shoot-through in half-bridge configurations; ≤1.0 Ω risks excessive gate current overshoot and ringing.

Does IPP200N15N3GHKSA1 require a gate driver with negative turn-off capability?

No - its 4 nC Q_gd and 10–14 nC Q_gs allow clean turn-off using standard 10 V single-supply drivers. Negative turn-off is unnecessary unless operating above 1 MHz or in ultra-low-noise EMI-critical systems where Miller clamping is added externally.

Can IPP200N15N3GHKSA1 replace IPP200N15N3GXKSA1 without layout changes?

Yes - both share identical PG-TO220-3 mechanical outline, pin assignment, and thermal pad configuration. The only difference is halogen-free plating (HKSA1) versus standard (XKSA1), with no impact on solderability, footprint, or thermal interface design.

Is the body diode suitable for continuous reverse conduction in synchronous rectification?

Yes - the diode supports 50 A continuous forward current (I_S) and 220 A pulsed current (I_S,pulse). At 50 A and 25 °C, V_SD is 1.0–1.2 V, making it viable for synchronous rectification when driven with precise dead-time control to avoid cross-conduction.

IPP200N15N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1820 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP200N15N3GHKSA1 FAQ

1.How can I place an order for IPP200N15N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP200N15N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP200N15N3GHKSA1 reliable?

The price and inventory of IPP200N15N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP200N15N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP200N15N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP200N15N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP200N15N3GHKSA1?

IPP200N15N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP200N15N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP200N15N3GHKSA1?

For technical support, including IPP200N15N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP200N15N3GHKSA1 requirements.

6.How does Aetrix verify that IPP200N15N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP200N15N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP200N15N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP200N15N3GHKSA1?

All IPP200N15N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP200N15N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP200N15N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP200N15N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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