Infineon Technologies IPP21N03L G

Overview

IPP21N03L G from Infineon Technologies is a 30 V, 21 A, N-channel enhancement-mode power MOSFET in TO-220 package, featuring R_DS(on) = 24 mΩ at V_GS = 10 V and Q_g = 25 nC, designed for DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IPP21N03L G datasheet, IPP21N03L G pinout, IPP21N03L G application, or IPP21N03L G equivalent, key selection criteria include on-resistance at 10 V gate drive, gate charge for switching loss estimation, avalanche ruggedness rating, and TO-220 thermal performance under continuous conduction mode.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology, enabling low conduction and switching losses. It supports 100% rated avalanche energy (E_AS = 85 mJ) and operates with gate threshold voltage V_GS(th) = 2.0–4.0 V, ensuring reliable turn-on with standard logic-level drivers.

The device features integrated body diode with reverse recovery time t_rr = 47 ns and Q_rr = 39 nC, suitable for synchronous rectification and hard-switched topologies where diode performance impacts efficiency.

Key Specifications

Pinout & Package

TO-220 package with through-hole mounting, standard 3-pin configuration (Drain tab, Gate, Source), drain connected to metal tab for direct heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP22NF03L and IRF3205, IPP21N03L G delivers optimal balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness for 24–30 V industrial switching-avoiding overdesign or reliability compromise.

Availability

IPP21N03L G is available at Aetrix Electronics and suitable for DC-DC power supplies, brushed DC motor drives, and industrial PLC output stages requiring stable component supply and long-term manufacturability.

Supply support for IPP21N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

IPP21N03L G belongs to the OptiMOS™ 3 discrete power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and embedded power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IPP21N03L G has T_J(max) = 175 °C. Continuous operation at this limit requires thermal design ensuring case temperature ≤100 °C with adequate heatsinking, as specified in Infineon's datasheet Figure 8 (Safe Operating Area). Derating is mandatory above 125 °C ambient.

Is the drain tab electrically isolated from the package mount surface?

No-the drain is directly connected to the metal tab. Electrical isolation requires a mica or polymer insulator washer and shoulder washers on mounting screws. Thermal interface material must not bridge isolation gaps, as confirmed by Infineon's mounting note AN2001.

Does IPP21N03L G support gate drive from a 3.3 V microcontroller?

No-it is not fully enhanced at 3.3 V. V_GS(th) ranges from 2.0–4.0 V, and R_DS(on) rises sharply below 4.5 V. Full 21 A current capability requires ≥10 V gate drive; a 3.3 V GPIO must use a gate driver IC such as IRS2001.

What is the recommended PCB footprint for TO-220 mounting?

Infineon specifies a 22 mm × 12 mm copper pad with ≥2 oz copper thickness, connected to internal ground plane via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). The footprint must match JEDEC TO-220AC outline (MS-001AA) with 2.54 mm lead pitch and 5.0 mm lead length.