Infineon Technologies IPP230N06L3G

Overview

IPP230N06L3G from Infineon Technologies is a 60 V, 30 A N-channel logic-level power MOSFET in PG-TO220-3 package, featuring 23 mΩ R_DS(on) at V_GS = 10 V and optimized for high-frequency switching in synchronous rectification and DC/DC converters. It delivers low gate charge × R_DS(on) figure-of-merit (FOM), 100% avalanche tested reliability, and operates across –55 °C to +175 °C junction temperature range.

For engineers reviewing the IPP230N06L3G datasheet, IPP230N06L3G pinout, IPP230N06L3G application, or IPP230N06L3G equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), 4.2 K/W thermal resistance (junction-to-case), and integrated body diode with t_rr = 27 ns and Q_rr = 23 nC - critical for efficiency in buck converters and OR-ing circuits.

Technical Context

This MOSFET employs Infineon's OptiMOS™3 silicon technology, enabling fast switching via low C_iss (1200–1600 pF), C_oss (270 pF), and C_rss (16 pF) with t_d(on) = 9 ns and t_d(off) = 19 ns under standard test conditions (V_DD = 30 V, R_G,ext = 3 Ω).

Its gate plateau voltage is 4.2 V, supporting robust turn-on margin with 7–10 nC total gate charge (Q_g) and 5 nC switching charge (Q_sw). The device sustains 13 mJ single-pulse avalanche energy at I_D = 20 A and is qualified per JEDEC J-STD-20/JESD22 for industrial applications.

Key Specifications

Pinout & Package

IPP230N06L3G uses the PG-TO220-3 package: insulated tab, through-hole mounting, 3-terminal configuration with drain-connected tab for low-inductance thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP30NF20 and IRFZ44NPBF, IPP230N06L3G offers superior high-frequency efficiency due to lower FOM, tighter V_GS(th) distribution, and guaranteed avalanche ruggedness - making it preferred for compact, high-reliability DC/DC designs.

Availability

IPP230N06L3G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, telecom rectifiers, and OR-ing circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP230N06L3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in DC/DC conversion, motor control, and power supply applications where low R_DS(on), fast switching, and avalanche ruggedness are essential.

FAQ

Is IPP230N06L3G suitable for 3.3 V gate drive?

Yes. Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.2 V, and R_DS(on) is specified down to V_GS = 4.5 V (max 40.8 mΩ at 15 A). At 3.3 V, it achieves partial enhancement suitable for medium-current applications with acceptable on-resistance - verified in Figure 7 (transfer characteristics) of the official datasheet.

What is the maximum PCB copper area required for thermal performance?

The datasheet specifies R_thJA = 40 K/W with a 6 cm² copper area (one layer, 70 µm thick) on FR4 PCB. This area is mandatory to achieve the rated 30 A continuous current at T_C = 100 °C. Smaller copper areas increase thermal resistance and require current derating per Figure 2.

Does IPP230N06L3G have an integrated body diode? What are its recovery specs?

Yes. It features a monolithic body diode with reverse recovery time t_rr = 27 ns and reverse recovery charge Q_rr = 23 nC at I_F = 30 A, dI_F/dt = 100 A/µs, and T_j = 25 °C. These values are measured and guaranteed - critical for synchronous rectifier design and OR-ing circuit timing margins.

Can IPP230N06L3G replace IPP230N06LG in existing designs?

Yes, IPP230N06L3G is the direct successor to IPP230N06LG (same package, marking, and electrical specs). The "3" suffix denotes the third-generation OptiMOS™3 process, offering identical R_DS(on), Q_g, and thermal specs, with improved consistency and JEDEC qualification - no layout or firmware changes required.