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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP230N06L3 G

Name: IPP230N06L3 G
Brand: Infineon Technologies
SKU: IPP230N06L3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP230N06L3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP230N06L3 G.pdf

Description:: MOSFET N-CH 60V 30A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP230N06L3 G from Infineon Technologies is a 60 V, 30 A N-channel logic-level power MOSFET in PG-TO220-3 package, optimized for high-frequency DC/DC converters and synchronous rectification. It delivers 23 mΩ R_DS(on) at V_GS = 10 V, 19.0 mΩ typ., with 7–10 nC total gate charge and 100% avalanche tested robustness.

For engineers reviewing the IPP230N06L3 G datasheet, IPP230N06L3 G pinout, IPP230N06L3 G application, or IPP230N06L3 G equivalent, key selection criteria include its 4.2 V gate plateau voltage, 1200–1600 pF input capacitance, 27 ns reverse recovery time, and suitability for 48 V automotive DC/DC and server VRM designs requiring low Q_g × R_DS(on) figure-of-merit.

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology to achieve low conduction and switching losses simultaneously. Its 1.2–2.2 V gate threshold enables reliable logic-level drive from 3.3 V or 5 V controllers, while the integrated body diode supports synchronous rectifier operation with 1.0–1.2 V forward voltage at 30 A.

The MOSFET's thermal resistance of 4.2 K/W (junction-to-case) and 40 K/W (junction-to-ambient on 6 cm² copper) enables high-power density layouts. Dynamic parameters-including 9 ns turn-on delay, 3 ns rise time, and 13–17 nC output charge-support efficient operation up to 1 MHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage for 48 V bus applications with margin
R_DS(on) max	23 mΩ at V_GS = 10 V, I_D = 30 A - ensures ≤0.7 W conduction loss at full load
Q_g	7–10 nC - enables fast, low-loss switching with standard gate drivers
E_AS	13 mJ - rated single-pulse avalanche energy for inductive load reliability
t_rr	27 ns - supports high-frequency synchronous rectification without excessive diode loss
C_iss	1200–1600 pF - defines gate drive strength requirement and EMI behavior
V_GS(th)	1.2–2.2 V - guarantees turn-on with 3.3 V microcontrollers and avoids false triggering

Pinout & Package

Package: PG-TO220-3 (standard through-hole power package with isolated tab; drain-connected tab, source and gate on leads).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires insulated mounting when heatsink is grounded
Source	Reference node for gate control and current return	Common connection point for gate driver ground and load return path
Gate	Control terminal for channel modulation	High-impedance input requiring <10 nC drive; sensitive to ESD and ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with 3.3 V/5 V MCU outputs without level-shifting
Optimized FOM (Q_g × R_DS(on))	~160–230 pC·Ω - reduces combined conduction and switching loss in high-frequency converters
100% avalanche tested	Rated for 13 mJ single-pulse energy - ensures ruggedness in inductive switching and fault conditions
Integrated Schottky-like body diode	27 ns t_rr, 1.0–1.2 V V_SD - enables efficient synchronous rectification without external diode
Halogen-free & RoHS compliant	Pb-free plating per JEDEC J-STD-20/JESD22 - meets industrial and automotive environmental compliance requirements

Applications

Server VRMs

Automotive DC/DC Converters

Use Scenario: 12 V → 1 V/50 A point-of-load conversion in data center CPU/GPU power supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter with 500 kHz–1 MHz switching.

Use Value: Low 23 mΩ R_DS(on) and 7–10 nC Q_g minimize conduction loss and gate drive loss, improving efficiency above 92% at full load.

Use Scenario: 48 V → 12 V bidirectional DC/DC in mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 200–300 kHz.

Use Value: 100% avalanche rating and 175 °C T_j max ensure reliability under transient overvoltage and under-hood thermal stress.

Industrial Motor Drives

Telecom Power Supplies

Use Scenario: Half-bridge inverter stage for 200 W BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element with PWM-controlled gate drive and freewheeling via internal diode.

Use Value: 27 ns t_rr and 23 mΩ R_DS(on) reduce switching loss and heat generation during continuous 10 kHz PWM commutation.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier module delivering 60 A at 5 V.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in LLC resonant converter output stage.

Use Value: 1.0–1.2 V V_SD and low Q_oss cut conduction loss by >40% versus 45 V Schottky, raising system efficiency to >95%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A, 40 mΩ R_DS(on), TO-220 package	Higher voltage rating but double R_DS(on) - less efficient in 48 V systems	Prefer only where higher breakdown margin is required and thermal budget allows higher conduction loss
IRFZ44NPBF	55 V V_DS, 49 A, 28 mΩ R_DS(on), TO-220 package	Lower voltage rating, higher R_DS(on), no avalanche rating specified	Select only for cost-sensitive 12 V/24 V applications where avalanche immunity is not critical

Compared with STP30NF20 and IRFZ44NPBF, IPP230N06L3 G offers superior 60 V/23 mΩ balance, guaranteed avalanche capability, and lower Q_g × R_DS(on) - making it optimal for high-efficiency, high-reliability 48 V DC/DC and synchronous rectifier designs.

Availability

IPP230N06L3 G is available at Aetrix Electronics and suitable for server VRMs, automotive DC/DC converters, and industrial motor drives requiring stable component supply and long-term manufacturability.

Supply support for IPP230N06L3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion and synchronous rectification in computing, automotive, and telecom infrastructure.

FAQ

Is IPP230N06L3 G suitable for 3.3 V gate drive?

Yes. With a gate threshold voltage range of 1.2–2.2 V and full enhancement at V_GS ≥ 4.5 V, it operates reliably with 3.3 V logic-level drivers when used with appropriate gate resistors and layout practices to ensure sufficient Miller immunity and switching speed.

What is the maximum junction temperature and how is it validated?

The maximum junction temperature is 175 °C, qualified per JEDEC JESD22-A103 (high-temperature operating life) and JESD22-A108 (temperature cycling). Thermal performance is verified using transient dual-interface testing and confirmed across production lots per AEC-Q101 stress test requirements.

Does IPP230N06L3 G have an integrated body diode, and what are its characteristics?

Yes. It features a monolithic body diode with 30 A continuous forward current rating, 120 A pulsed current, 1.0–1.2 V forward voltage at 30 A and 25 °C, and 27 ns reverse recovery time - enabling use as a synchronous rectifier without external diodes in many topologies.

How does the PG-TO220-3 package affect thermal design compared to surface-mount alternatives?

The PG-TO220-3 package provides 4.2 K/W junction-to-case thermal resistance, allowing direct mounting to heatsinks. Unlike SMD packages, it avoids PCB copper area dependency for heat spreading but requires mechanical isolation if the tab is connected to drain and the heatsink is grounded - necessitating insulating pads or shoulder washers.

IPP230N06L3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 11µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP230N06L3 G FAQ

1.How can I place an order for IPP230N06L3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP230N06L3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP230N06L3 G reliable?

The price and inventory of IPP230N06L3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP230N06L3 G is usually 5 days.

3.What payment methods are accepted for IPP230N06L3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP230N06L3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP230N06L3 G?

IPP230N06L3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP230N06L3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP230N06L3 G?

For technical support, including IPP230N06L3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP230N06L3 G requirements.

6.How does Aetrix verify that IPP230N06L3 G is sourced from the original manufacturer or authorized distributors?

All IPP230N06L3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP230N06L3 G meets industry standards.

7.What is the process for return or replacement of IPP230N06L3 G?

All IPP230N06L3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPP230N06L3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP230N06L3 G part is unused and in its original packaging.

Return procedure for IPP230N06L3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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