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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP230N06L3GXKSA1

Name: IPP230N06L3GXKSA1
Brand: Infineon Technologies
SKU: IPP230N06L3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP230N06L3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP230N06L3GXKSA1.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP230N06L3GXKSA1 from Infineon Technologies is a 60 V, 30 A N-channel logic-level MOSFET in PG-TO220-3 package, optimized for high-frequency switching and synchronous rectification in DC/DC converters. It delivers R_DS(on) = 23 mΩ at V_GS = 10 V and 40.8 mΩ at V_GS = 4.5 V, with 100% avalanche tested ruggedness and RoHS/halogen-free compliance.

For engineers reviewing the IPP230N06L3GXKSA1 datasheet, IPP230N06L3GXKSA1 pinout, IPP230N06L3GXKSA1 application, or IPP230N06L3GXKSA1 equivalent, key selection criteria include gate charge (Q_g = 7–10 nC), FOM (Q_g × R_DS(on)), thermal resistance (R_thJC = 4.2 K/W), and logic-level drive compatibility down to 4.5 V.

Technical Context

This OptiMOS™3 power transistor employs trench-based silicon technology to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_gs ratio (≈0.4) and 16–31 S transconductance support fast, controllable turn-on/turn-off in hard-switched topologies.

The integrated body diode exhibits t_rr = 27 ns and Q_rr = 23 nC at I_F = 30 A, enabling efficient synchronous rectification without external Schottky replacement in 12 V–48 V input buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus and automotive 36 V transient applications
R_DS(on) max	23 mΩ @ V_GS = 10 V - Enables ≤0.7 W conduction loss at 30 A continuous drain current
Q_g	7–10 nC - Low gate charge supports >1 MHz switching with minimal driver power demand
E_AS	13 mJ - Confirmed single-pulse avalanche energy rating ensures robustness under inductive load switching
R_thJC	4.2 K/W - Enables 36 W power dissipation with modest heatsinking at T_C = 25 °C
t_r/t_f	3 ns / 3 ns - Fast edge rates reduce switching transition time and associated losses
V_GS(th)	1.2–2.2 V - Logic-level threshold allows direct drive from 3.3 V or 5 V microcontrollers

Pinout & Package

IPP230N06L3GXKSA1 uses the PG-TO220-3 through-hole package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring appropriate insulation when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path in buck or half-bridge
Pin 2 (Gate)	Control electrode	High-impedance input requiring <10 nC total charge for full enhancement
Pin 3 (Drain)	Power output terminal	Internally bonded to metal tab; must be insulated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
Optimized Q_g × R_DS(on) FOM	230–320 nC·mΩ - Balances switching speed and conduction loss for DC/DC efficiency peak at 300–1000 kHz
100% avalanche tested	Rated E_AS = 13 mJ - Guarantees operation under unclamped inductive switching without derating
Logic-level gate drive	V_GS(th) ≤ 2.2 V - Eliminates need for level-shifting or gate boost circuits in 3.3 V control systems
Integrated robust body diode	t_rr = 27 ns, Q_rr = 23 nC - Supports synchronous rectification without external diode in medium-power SMPS

Applications

Server VRMs

Automotive DC/DC

Use Scenario: 48 V–12 V bidirectional buck-boost converter in server power delivery networks.

IC Role / Device Role / Timing Role: High-side switch in interleaved phase-legs, operating at 500 kHz with 30 A peak current per phase.

Use Value: 23 mΩ R_DS(on) limits conduction loss to <0.7 W; low Q_gd enables clean gate drive waveform under high dv/dt.

Use Scenario: 12 V battery-to-48 V liftgate or ADAS camera power supply in passenger vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of isolated flyback, driven by controller with 4.5 V gate output.

Use Value: Logic-level threshold ensures full enhancement at 4.5 V; 100% avalanche rating withstands load dump transients.

Industrial PLC I/O

Telecom PoE PSE

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules.

IC Role / Device Role / Timing Role: Load switch controlling 24 V solenoid or indicator LED strings with 3 A–10 A steady-state current.

Use Value: 30 A continuous rating provides 3× safety margin; TO220 mechanical robustness supports industrial vibration requirements.

Use Scenario: Power sourcing equipment (PSE) switch in IEEE 802.3bt Type 4 (90 W) midspan injectors.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology, handling 500 kHz switching with 1.2 A RMS current.

Use Value: Low C_oss (270 pF) reduces capacitive turn-off loss; halogen-free/RoHS compliance meets telecom environmental mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB230N06L3G	Same die, PG-TO263-3 surface-mount package; R_thJC = 4.2 K/W identical; same marking "230N06L"	Requires PCB rework for SMT assembly; better thermal performance on large copper areas vs. TO220's through-hole mounting	Select for automated production or space-constrained layouts where thermal pad access is available
STP220N6F7	60 V, 220 A rated but R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 105 nC; not logic-level (V_GS(th) = 2–4 V)	Higher current capability but requires gate driver due to higher Q_g and threshold; unsuitable for direct MCU drive	Select only when >100 A pulsed current or ultra-low R_DS(on) is mandatory; avoid for 3.3 V logic interfaces

Compared with IPB230N06L3G, IPP230N06L3GXKSA1 offers identical electrical specs but TO220-3 mechanical fit for prototyping and legacy through-hole designs; versus STP220N6F7, it trades raw current capacity for logic-level usability and lower gate drive burden in mid-power DC/DC.

Availability

IPP230N06L3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, automotive DC/DC converters, industrial PLC I/O modules, and telecom PoE PSE applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP230N06L3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and automotive 12 V–48 V systems where low gate charge and logic-level drive are critical.

FAQ

Is IPP230N06L3GXKSA1 pin-compatible with IPP230N06L3G?

No - IPP230N06L3GXKSA1 uses PG-TO220-3 packaging with three leads in inline configuration, while IPP230N06L3G uses PG-TO263-3 (D²PAK) surface-mount packaging with gull-wing leads. Mechanical footprint and soldering method differ; no direct PCB substitution is possible without layout revision.

What is the maximum recommended gate resistor value for 500 kHz switching?

For 500 kHz operation with 10 V gate drive, a 3 Ω external gate resistor is validated per datasheet figure 16. Using R_G > 5 Ω increases t_d(on) and t_d(off), risking shoot-through in half-bridge configurations; R_G < 2 Ω may cause ringing due to PCB inductance interacting with low Q_gd.

Does the body diode support continuous reverse conduction in synchronous rectification?

Yes - the integrated body diode is rated for I_S = 30 A continuous and I_S,pulse = 120 A, with V_SD = 1.0–1.2 V at 30 A and 25 °C. Its 27 ns t_rr and low Q_rr enable efficient synchronous rectification in buck-derived topologies up to 1 MHz.

Can IPP230N06L3GXKSA1 replace IPP220N06LG in existing designs?

No - IPP220N06LG has R_DS(on) = 2.2 mΩ and 220 A rating, differing significantly in on-resistance, gate charge (105 nC), and safe operating area. Substituting IPP230N06L3GXKSA1 would increase conduction loss by ~10× and reduce current capability, risking thermal failure under identical load conditions.

IPP230N06L3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 11µA

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 36W

Operating Temperature:: -55°C ~ 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP230N06L3GXKSA1 FAQ

1.How can I place an order for IPP230N06L3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP230N06L3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP230N06L3GXKSA1 reliable?

The price and inventory of IPP230N06L3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP230N06L3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP230N06L3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP230N06L3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP230N06L3GXKSA1?

IPP230N06L3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP230N06L3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP230N06L3GXKSA1?

For technical support, including IPP230N06L3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP230N06L3GXKSA1 requirements.

6.How does Aetrix verify that IPP230N06L3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP230N06L3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP230N06L3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP230N06L3GXKSA1?

All IPP230N06L3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP230N06L3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP230N06L3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP230N06L3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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