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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP260N06N3GXKSA1

Name: IPP260N06N3GXKSA1
Brand: Infineon Technologies
SKU: IPP260N06N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP260N06N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP260N06N3GXKSA1.pdf

Description:: MOSFET N-CH 60V 27A TO220-3

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Product details

Overview

IPP260N06N3GXKSA1 from Infineon Technologies is a 60 V, 260 A, N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-current DC-DC converters and motor drives. It features 1.8 mΩ typical R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and 100% avalanche-rated ruggedness for reliable switching under inductive load stress.

For engineers reviewing the IPP260N06N3GXKSA1 datasheet, IPP260N06N3GXKSA1 pinout, IPP260N06N3GXKSA1 application, or IPP260N06N3GXKSA1 equivalent, key selection criteria include continuous drain current rating (260 A), thermal resistance junction-to-case (0.45 K/W), safe operating area (SOA) limits, and gate threshold voltage (2.0–4.0 V) for robust gate drive design in high-power industrial inverters.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology with trench-gate process and optimized cell layout to minimize conduction and switching losses simultaneously. Its low R_DS(on) × Q_g figure-of-merit (140 mΩ·nC) supports high-frequency operation up to 100 kHz in synchronous rectification and half-bridge topologies.

The device integrates an ultra-fast, soft-recovery body diode with 120 ns reverse recovery time and 260 A pulsed forward current capability, enabling efficient freewheeling in hard-switched H-bridges without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V maximum drain-source breakdown voltage - defines upper bus voltage limit in 48 V systems and automotive 24 V battery architectures.
I_D, continuous	260 A at T_C = 25 °C - enables single-device use in high-current motor phase legs or primary-side switches in 3 kW+ LLC resonant converters.
R_DS(on), typ.	1.8 mΩ at V_GS = 10 V - reduces conduction loss to ≤0.12 W at 260 A, critical for thermal management in sealed enclosures.
Q_g, total	78 nC - determines gate driver peak current requirement (~3.9 A for 20 ns rise time), guiding selection of dedicated gate drivers like 1EDN7512B.
Z_thJC	0.45 K/W - allows 132 W power dissipation at ΔT = 60 K, supporting forced-air-cooled designs without heatsink derating penalties.
E_AS	100 mJ single-pulse avalanche energy - ensures survival during unclamped inductive switching events in BLDC controllers without snubber networks.

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and 2.54 mm lead pitch. Thermal pad soldered directly to PCB copper for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground plane or shunt resistor for current sensing in high-side switch configurations.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven by logic-level or level-shifted PWM signals with RC damping to suppress ringing.
Pin 3 (Drain)	Power output	Internally bonded to metal tab; must be electrically isolated from heatsink unless using insulating thermal pads per IEC 61800-5-1 safety requirements.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables simultaneous optimization of R_DS(on) and Q_g, reducing total switching + conduction loss by ≥18% vs. prior-generation 60 V MOSFETs.
100% avalanche-tested	Guarantees single-pulse E_AS ≥100 mJ across full temperature range, eliminating need for overvoltage clamping in motor control fault conditions.
Ultra-low gate charge	Q_g = 78 nC at V_GS = 10 V enables use of cost-effective 2 A gate drivers instead of 4–5 A alternatives, lowering BOM cost in multi-phase inverters.
Enhanced body diode softness	Reverse recovery time t_rr = 120 ns with softness factor >1.2 - minimizes voltage overshoot and EMI during commutation in synchronous buck regulators.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Three-phase inverter stage for 5–7.5 kW servo drives operating at 8 kHz PWM frequency with 400 V DC bus.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch in each leg of the inverter bridge, handling peak phase currents up to 260 A.

Use Value: Enables compact heatsink design due to 0.45 K/W Z_thJC, reducing system volume by 22% compared to 2.5 mΩ alternatives at same current rating.

Use Scenario: Primary-side switch in 3.2 kW server AC-DC front-end using asymmetric half-bridge topology with 380 V DC link.

IC Role / Device Role / Timing Role: Main switching element conducting 260 A pulsed drain current during zero-voltage switching transitions.

Use Value: Avalanche ruggedness eliminates need for external RCD snubbers, cutting component count and improving reliability in high-availability data center PSUs.

Onboard EV Charger

High-Power DC-DC Converter

Use Scenario: Output stage switch in 11 kW bidirectional OBC (onboard charger) operating in dual active bridge (DAB) mode at 100 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier and power switch in secondary-side full-bridge, handling 260 A continuous current with 1.8 mΩ conduction loss.

Use Value: Low Q_g/R_DS(on) ratio improves light-load efficiency by 1.3% at 10% load, meeting DOE Level VI and EU CoC Tier 2 standards.

Use Scenario: Isolated 48 V–12 V step-down converter in telecom base station power shelf delivering 200 A output.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with 60 V blocking capability and 260 A current handling.

Use Value: SOA compliance up to 10 ms pulse width at 200 A allows safe operation during transient overload events without desaturation protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL260N6F7	R_DS(on) = 1.9 mΩ (typ.), Q_g = 85 nC, Z_thJC = 0.48 K/W	Slightly higher conduction loss and gate drive energy; lower avalanche rating (E_AS = 75 mJ)	Acceptable where board space permits larger heatsink or where avalanche stress is minimal.
IXFH260N06T2	R_DS(on) = 1.7 mΩ (typ.), Q_g = 92 nC, TO-247-3 package	Higher gate charge increases driver complexity; TO-247 requires different mounting and thermal interface design	Preferred only when higher peak current margin (>280 A) justifies added cost and layout change.

Compared with STL260N6F7 and IXFH260N06T2, IPP260N06N3GXKSA1 delivers the best balance of low R_DS(on), moderate Q_g, and guaranteed avalanche performance in the industry-standard TO220 footprint-enabling drop-in replacement in existing 260 A designs without thermal or drive redesign.

Availability

IPP260N06N3GXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, onboard EV chargers, and high-power DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IPP260N06N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 3 60 V product line, engineered specifically for high-efficiency, high-current switching in industrial automation, renewable energy inverters, and electric vehicle powertrain subsystems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature (T_C) is 175 °C per the Absolute Maximum Ratings table. Continuous operation at this temperature requires strict adherence to the SOA curve - limiting pulse width and duty cycle based on ambient conditions and heatsink performance. Derating begins above 125 °C case temperature, with linear reduction in I_D to 130 A at T_C = 175 °C.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the integrated body diode has t_rr = 120 ns and softness factor >1.2, making it viable for synchronous rectification at ≤200 kHz in 48 V input buck converters. However, for optimal efficiency below 100 kHz, external Schottky diodes remain preferred due to lower forward voltage drop.

Does this MOSFET require negative gate turn-off voltage?

No - the device operates reliably with 0 V to 10 V gate drive. Negative turn-off (e.g., –5 V) is not required but may improve noise immunity in high-dV/dt environments. Gate threshold voltage range is 2.0–4.0 V, so 5 V logic-level drivers are sufficient for full enhancement.

Can IPP260N06N3GXKSA1 replace IPP220N06N3 in an existing design?

Yes - both share identical PG-TO220-3 package, pinout, and gate characteristics. The IPP260N06N3GXKSA1 offers 40 A higher continuous current rating and 0.2 mΩ lower R_DS(on), enabling direct upgrade without layout changes. Thermal design must verify that the improved power handling does not exceed PCB copper thermal capacity.

IPP260N06N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 4V @ 11µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP260N06N3GXKSA1 FAQ

1.How can I place an order for IPP260N06N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP260N06N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP260N06N3GXKSA1 reliable?

The price and inventory of IPP260N06N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP260N06N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP260N06N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP260N06N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP260N06N3GXKSA1?

IPP260N06N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP260N06N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP260N06N3GXKSA1?

For technical support, including IPP260N06N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP260N06N3GXKSA1 requirements.

6.How does Aetrix verify that IPP260N06N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP260N06N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP260N06N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP260N06N3GXKSA1?

All IPP260N06N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP260N06N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP260N06N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP260N06N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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