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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP26CNE8N G

Name: IPP26CNE8N G
Brand: Infineon Technologies
SKU: IPP26CNE8N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP26CNE8N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP26CNE8N G.pdf

Description:: MOSFET N-CH 85V 35A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP26CNE8N G from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 85 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 26 mΩ max R_DS(on) at V_GS = 10 V. It supports 175 °C junction operation and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server PSUs.

For engineers reviewing the IPP26CNE8N G datasheet, IPP26CNE8N G pinout, IPP26CNE8N G application, or IPP26CNE8N G equivalent, key selection criteria include its 2.1 K/W R_thJC, 23–31 nC total gate charge, 1560–2070 pF input capacitance, and robust 65 mJ single-pulse avalanche energy - all critical for thermal management and switching loss optimization in hard-switched topologies.

Technical Context

This MOSFET employs trench-based OptiMOS™2 technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM), enabling high-efficiency operation above 100 kHz. Its 5.6 V gate plateau voltage and 19–38 S transconductance support stable drive under varying load and temperature conditions.

The device integrates a fast-recovery body diode with 85 ns t_rr, 165 nC Q_rr, and 1.0–1.2 V V_SD at I_F = 35 A, making it suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	85 V - maximum blocking voltage for 48 V input bus applications with 20 % margin
R_DS(on), max	26 mΩ at V_GS = 10 V, I_D = 35 A - enables <1 W conduction loss at full load in 12 V output rails
Q_g	23–31 nC - determines gate driver current requirement and switching transition time
E_AS	65 mJ - withstands single-pulse inductive energy without failure in clamp or flyback circuits
t_r/t_f	4–6 ns / 3–4 ns - supports >500 kHz switching with minimized overlap loss
R_thJC	2.1 K/W - defines minimum heatsink thermal resistance needed to maintain T_j ≤ 175 °C at P_tot = 71 W
I_D,pulse	140 A - supports short-term overload and inrush current handling in hot-swap controllers

Pinout & Package

IPP26CNE8N G uses the PG-TO220-3 package: isolated tab (drain), vertical mounting, through-hole leaded outline with 2.54 mm pin pitch. The drain-connected metal tab provides primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path and PCB ground plane
Pin 2 (Gate)	Control terminal	High-impedance input requiring <31 nC charge to fully enhance; sensitive to ringing
Pin 3 (Drain)	Power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration

Key Features

Feature	Design Value
N-channel normal-level logic	Turns on fully at standard 10 V gate drive - compatible with industrial PWM controllers without level-shifting
OptiMOS™2 trench process	Delivers 26 mΩ R_DS(on) with 23 nC Q_g - reduces combined conduction + switching losses by >15 % vs. planar equivalents
175 °C T_j,max	Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C
Robust body diode	85 ns t_rr and 165 nC Q_rr - minimizes reverse recovery spikes and cross-conduction risk in synchronous buck stages
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - qualified for automotive and industrial end-equipment without material compliance waivers

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80 PLUS Titanium 48 V input, 12 V/100 A output LLC resonant converter.

IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 26 mΩ R_DS(on) and 2.1 K/W R_thJC enable >97 % efficiency at full load while maintaining T_j < 135 °C on standard extruded heatsink.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM-driven inverter stage with regenerative braking.

Use Value: 140 A pulsed rating and 65 mJ E_AS tolerate motor stall currents and inductive kickback during rapid deceleration.

Telecom Rectifier

Renewable Energy Inverter

Use Scenario: Synchronous rectifier in 54 V input telecom rectifier module delivering 48 V/60 A output.

IC Role / Device Role / Timing Role: Secondary-side freewheeling switch replacing Schottky diode in forward topology.

Use Value: 1.0–1.2 V V_SD and 85 ns t_rr reduce conduction loss by 40 % and eliminate reverse recovery loss versus 45 V Schottky.

Use Scenario: DC link switch in micro-inverter for residential solar panels (600 V DC input, 230 V AC output).

IC Role / Device Role / Timing Role: High-frequency auxiliary switch in active clamp circuit for voltage balancing and soft switching.

Use Value: 85 V rating provides sufficient margin over 600 V DC link transient overshoot when used in clamping snubber networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB26CNE8N G	PG-TO263-3 package; 2.1 K/W R_thJC identical but lower R_thJA due to surface-mount thermal pad	Better suited for space-constrained, high-density PCB layouts with thermal vias	Select for automated assembly and improved thermal performance on multilayer boards
IPI26CNE8N G	PG-TO262-3 package; same R_DS(on) and Q_g, but 2.5 K/W R_thJC due to smaller tab area	Preferred for cost-sensitive industrial drives where manual heatsink mounting is acceptable	Select when mechanical retention and serviceability outweigh thermal optimization needs

Compared with IPB26CNE8N G and IPI26CNE8N G, IPP26CNE8N G offers superior heatsink interface reliability via TO-220's isolated tab and highest mechanical robustness for field-serviceable systems, while maintaining identical electrical FOM across the OptiMOS™2 family.

Availability

IPP26CNE8N G is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for IPP26CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™2 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for IPP26CNE8N G?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.07. Operation beyond ±15 V risks permanent gate oxide damage, while drive below 4.5 V may result in incomplete enhancement and elevated R_DS(on). Recommended gate drive is 10–12 V for optimal conduction loss and safe margin against transients.

Does IPP26CNE8N G require a gate resistor for stability?

Yes - a 1.6 Ω gate resistor is specified in the datasheet for switching characterization. This value damps gate oscillation, controls dV/dt during turn-on/off, and limits peak gate current to <20 A. Lower values increase switching speed but raise EMI risk; higher values slow transitions and increase switching loss.

Can IPP26CNE8N G be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with T_j) enables inherent current sharing. Parallel operation requires matched layout, identical gate drive paths, and thermal coupling to ensure uniform heating. Derating to 80 % of total rated current per device is recommended for reliability.

Is IPP26CNE8N G suitable for linear mode operation?

No - it is not characterized or qualified for linear (saturation) mode. Safe Operating Area (SOA) curves show limited DC capability: at V_DS = 20 V, maximum continuous I_D is ~12 A. Linear use risks thermal runaway due to localized hotspot formation outside SOA boundaries.

IPP26CNE8N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 85 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2070 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP26CNE8N G FAQ

1.How can I place an order for IPP26CNE8N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP26CNE8N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP26CNE8N G reliable?

The price and inventory of IPP26CNE8N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP26CNE8N G is usually 5 days.

3.What payment methods are accepted for IPP26CNE8N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP26CNE8N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP26CNE8N G?

IPP26CNE8N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP26CNE8N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP26CNE8N G?

For technical support, including IPP26CNE8N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP26CNE8N G requirements.

6.How does Aetrix verify that IPP26CNE8N G is sourced from the original manufacturer or authorized distributors?

All IPP26CNE8N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP26CNE8N G meets industry standards.

7.What is the process for return or replacement of IPP26CNE8N G?

All IPP26CNE8N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP26CNE8N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP26CNE8N G part is unused and in its original packaging.

Return procedure for IPP26CNE8N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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