Infineon Technologies IPP47N10S33AKSA1

Overview

IPP47N10S33AKSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 47 A continuous drain current at 25°C, and 33 mΩ maximum R_DS(on) at V_GS = 10 V. It operates up to 175°C junction temperature, features avalanche rating (E_AS = 400 mJ), and is housed in a PG-TO220-3-1 package. It serves as a main switching element in DC-DC converters and motor control inverters.

For engineers reviewing the IPP47N10S33AKSA1 datasheet, IPP47N10S33AKSA1 pinout, IPP47N10S33AKSA1 application, or IPP47N10S33AKSA1 equivalent, key selection criteria include its 33 mΩ on-resistance at 10 V gate drive, 188 A pulsed drain capability, 6 kV/µs dv/dt ruggedness, and TO-220 thermal performance (R_thJC = 0.85 K/W).

Technical Context

This MOSFET employs planar SIPMOS technology optimized for high-current, medium-voltage switching with low conduction and switching losses. Its gate threshold voltage (2.1–4.0 V) ensures reliable turn-on with standard logic-level drivers, while its 2000–2500 pF input capacitance and 70–105 nC total gate charge support efficient hard-switching operation up to ~100 kHz in industrial SMPS designs.

The integrated body diode exhibits 1.1–1.5 V forward voltage at 94 A and 100–150 ns reverse recovery time, enabling synchronous rectification and freewheeling in half-bridge topologies. Thermal design is enabled by its 0.85 K/W junction-to-case resistance and defined safe operating area (SOA) curves for DC, 10 ms, and 100 µs pulse durations.

Key Specifications

Pinout & Package

IPP47N10S33AKSA1 is supplied in a PG-TO220-3-1 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating mounting hardware when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP48NF10 and IRF540NPBF, IPP47N10S33AKSA1 offers balanced trade-offs: moderate R_DS(on), guaranteed avalanche ruggedness, and industry-standard TO-220 thermal performance-making it optimal for cost-sensitive yet reliability-critical industrial power stages.

Availability

IPP47N10S33AKSA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and UPS output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IPP47N10S33AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the SIPMOS™ family of discrete power MOSFETs, engineered for high-efficiency, high-reliability switching in industrial motor control, renewable energy, and uninterruptible power systems.

FAQ

What is the maximum allowable gate-source voltage for IPP47N10S33AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, aligning with its 2.1–4.0 V V_GS(th) range and avoiding Miller-induced shoot-through in bridge configurations.

Does IPP47N10S33AKSA1 require a heatsink in typical applications?

Yes - at 47 A continuous current, junction-to-case thermal resistance is 0.85 K/W, so even with 1.6 W conduction loss, a heatsink with ≤10 K/W thermal resistance is required to maintain T_j ≤ 125°C at 50°C ambient. Natural convection with aluminum finned heatsink (≥150 cm² surface area) is sufficient; forced air reduces required size by ~40%.

Can IPP47N10S33AKSA1 replace older IRF540 devices in existing designs?

Yes, with validation - both share TO-220-3 footprint and 100 V rating, but IPP47N10S33AKSA1 has lower R_DS(on) (33 mΩ vs. 44 mΩ), higher I_D (47 A vs. 33 A), and specified avalanche energy (400 mJ). Gate drive compatibility is confirmed (V_GS(th) ranges overlap), but layout review is needed to ensure adequate gate loop inductance control due to higher di/dt capability.

Is the drain tab electrically isolated in the PG-TO220-3-1 package?

No - the metal tab is internally connected to the drain terminal. When mounting to a heatsink, electrical isolation (e.g., mica washer + thermal grease or insulated mounting kit) is mandatory unless the heatsink is floating or intentionally tied to drain potential. Failure to isolate may cause short circuits or ground loops in low-side switch configurations.