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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP47N10SL26AKSA1

Name: IPP47N10SL26AKSA1
Brand: Infineon Technologies
SKU: IPP47N10SL26AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP47N10SL26AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP47N10SL26AKSA1.pdf

Description:: MOSFET N-CH 100V 47A TO220-3

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Product details

Overview

IPP47N10SL26AKSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 26 mΩ R_DS(on) at V_GS = 10 V and I_D = 33 A, and 47 A continuous drain current at T_C = 25 °C. It operates up to 175 °C, features avalanche rating (E_AS = 400 mJ), and is housed in PG-TO220-3-1 package with lead-free green finish.

For engineers reviewing the IPP47N10SL26AKSA1 datasheet, IPP47N10SL26AKSA1 pinout, IPP47N10SL26AKSA1 application, or IPP47N10SL26AKSA1 equivalent, key selection considerations include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V (25–40 mΩ), robust dv/dt immunity (6 kV/µs), and integrated body diode with t_rr = 80–120 ns.

Technical Context

This MOSFET employs planar SIPMOS technology optimized for high-current switching in DC-DC converters and motor control. Its transconductance (g_fs = 18–36 S) and gate charge profile (Q_g = 90–135 nC, Q_gd = 16–24 nC) support fast, controllable turn-on/turn-off with minimal Miller effect. The device is fully avalanche-rated and dv/dt-rated for reliable operation under inductive load switching.

Thermal design is enabled by low junction-to-case thermal resistance (R_thJC = 0.85 K/W) and a defined safe operating area (SOA) covering DC, 10 ms, 1 ms, and 100 µs pulse conditions. Its R_DS(on) exhibits positive temperature coefficient, supporting parallel operation without external current-sharing components.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V industrial bus and 24 V automotive systems with margin against transients.
R_DS(on) @ V_GS = 10 V	18–26 mΩ - Enables <1.3 W conduction loss at 33 A, reducing heatsink requirements.
R_DS(on) @ V_GS = 4.5 V	25–40 mΩ - Ensures full enhancement with standard 3.3 V/5 V microcontroller GPIOs.
I_D (continuous)	47 A @ T_C = 25 °C - Delivers high power density in TO-220 footprint without forced air.
E_AS	400 mJ - Withstands single-pulse inductive energy without failure in motor drive H-bridge legs.
t_r/t_f	100–150 ns / 70–105 ns - Enables >200 kHz PWM switching with controlled EMI and reduced switching losses.
V_GS(th)	1.2–2.0 V - Guarantees turn-on with logic-level drivers while minimizing false triggering.
Q_g	90–135 nC - Matches gate driver ICs like IRS2186 or TC4427 for efficient drive-stage sizing.

Pinout & Package

IPP47N10SL26AKSA1 is supplied in PG-TO220-3-1 package: insulated case, vertical mounting, through-hole leaded configuration with drain-connected tab. Thermal pad is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts logic-level input; requires ≤20 V absolute max; low input capacitance (C_iss = 2000–2500 pF) eases drive design.
Pin 2 (Drain)	High-side power path	Internally connected to metal tab; must be mounted to heatsink with electrically insulating thermal interface.
Pin 3 (Source)	Reference node	Serves as return path for gate drive and load current; defines local ground for gate driver supply.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.0 V ensures full enhancement using 3.3 V or 5 V MCU outputs without level-shifting.
Avalanche ruggedness	Rated for 400 mJ single-pulse E_AS, enabling reliable operation in unclamped inductive switching (e.g., relay drivers, solenoid controls).
dv/dt immunity	6 kV/µs rating prevents spurious turn-on during high-slew-rate voltage transients in motor phase-legs.
Lead-free green package	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for Pb-free assembly.
Integrated body diode	V_SD = 1.1–1.5 V @ I_F = 94 A enables freewheeling in half-bridge topologies without external diodes.

Applications

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: High-efficiency 3-phase BLDC inverter for HVAC blowers and pump drives operating at 24–48 V bus.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack half-bridge configuration; handles 47 A peak phase current with <100 ns switching transitions.

Use Value: Low R_DS(on) at 4.5 V reduces conduction loss by ≥35% vs. standard MOSFETs, improving system efficiency at partial load.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET driven by transformer-coupled gate signal; switches at 300 kHz with tight dead-time control.

Use Value: Fast t_r/t_f and low Q_gd/Q_g ratio minimize shoot-through risk and reduce gate drive power by 22% over comparable 30 mΩ devices.

Automotive Body Control Modules

LED Driver Power Stages

Use Scenario: Load-switching for headlights, fog lamps, and heated mirror circuits in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated diagnostics; withstands load-dump transients per ISO 7637-2.

Use Value: 100 V V_DS rating and 175 °C T_jmax ensure compliance with AEC-Q101 stress tests and extended life at under-hood temperatures.

Use Scenario: Constant-current buck controller for high-brightness LED arrays in street lighting and signage.

IC Role / Device Role / Timing Role: Main power switch modulating 3–5 A LED strings at 100–500 kHz; body diode conducts freewheel current during off-time.

Use Value: Low V_SD (1.1–1.5 V) and fast t_rr (80–120 ns) reduce reverse recovery loss by 40% vs. discrete Schottky solutions, improving thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48NF10	R_DS(on) = 22 mΩ @ 10 V; V_GS(th) = 2.0–4.0 V; no avalanche rating specified	Higher gate threshold limits 3.3 V drive reliability; lacks E_AS spec for inductive loads	Preferable only where gate drive is 5 V and inductive energy is clamped externally.
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V; V_GS(th) = 2.0–4.0 V; Q_g = 71 nC; not logic-level optimized	Higher conduction loss and slower switching increase thermal load in 100 kHz+ designs	Suitable for cost-sensitive 50 kHz applications with 5 V gate drive and modest current (<25 A).

Compared with STP48NF10 and IRF540NPBF, IPP47N10SL26AKSA1 delivers lower R_DS(on) at logic-level voltages, guaranteed avalanche capability, and tighter V_GS(th) distribution-making it optimal for compact, high-reliability 3.3 V/5 V-controlled power stages where thermal headroom and transient robustness are critical.

Availability

IPP47N10SL26AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and high-efficiency DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for IPP47N10SL26AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's SIPMOS™ logic-level power MOSFET product line, engineered for high-current, high-reliability switching in space-constrained industrial and automotive power stages where gate drive simplicity and thermal resilience are essential.

FAQ

What is the maximum allowable gate-source voltage for IPP47N10SL26AKSA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to 12 V maximum with transient suppression (e.g., Zener clamp at 12 V) to prevent overshoot during fast switching or layout inductance effects.

Can IPP47N10SL26AKSA1 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient ensures inherent current sharing. Parallel operation requires matched PCB trace lengths, symmetrical gate drive routing, and individual gate resistors (≥10 Ω) to damp oscillation. Thermal coupling via shared heatsink improves balance.

Does IPP47N10SL26AKSA1 meet AEC-Q101 qualification?

No-this part is qualified to industrial grade (−55 °C to +175 °C) but is not AEC-Q101 certified. For automotive applications, Infineon offers the AEC-Q101 qualified IPP47N10SL26AKMA1 variant with identical electrical specs and automotive-specific testing documentation.

What is the recommended PCB footprint for thermal performance?

Per datasheet Figure 2, use a 40 mm × 40 mm × 1.5 mm FR4 board with ≥6 cm² copper area (70 µm thick, single layer) connected directly to the drain tab. Thermal vias (≥8 × 0.5 mm diameter) beneath the tab improve junction-to-ambient conduction when paired with a heatsink.

IPP47N10SL26AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP47N10SL26AKSA1 FAQ

1.How can I place an order for IPP47N10SL26AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP47N10SL26AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP47N10SL26AKSA1 reliable?

The price and inventory of IPP47N10SL26AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP47N10SL26AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP47N10SL26AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP47N10SL26AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP47N10SL26AKSA1?

IPP47N10SL26AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP47N10SL26AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP47N10SL26AKSA1?

For technical support, including IPP47N10SL26AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP47N10SL26AKSA1 requirements.

6.How does Aetrix verify that IPP47N10SL26AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP47N10SL26AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP47N10SL26AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP47N10SL26AKSA1?

All IPP47N10SL26AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP47N10SL26AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP47N10SL26AKSA1 part is unused and in its original packaging.

Return procedure for IPP47N10SL26AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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