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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP50R299CPHKSA1

Name: IPP50R299CPHKSA1
Brand: Infineon Technologies
SKU: IPP50R299CPHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP50R299CPHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP50R299CPHKSA1.pdf

Description:: MOSFET N-CH 550V 12A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,381

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Product details

Overview

IPP50R299CPHKSA1 from Infineon Technologies is a 500 V, 13 A, 299 mΩ N-channel CoolMOS™ C7 superjunction power MOSFET in TO-220FP package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters operating at 65–100 kHz. It features 100% avalanche-rated ruggedness, low gate charge (Q_g = 34 nC), and reduced E_oss (1.8 µJ @ 400 V) for improved hard-switching efficiency.

For engineers reviewing the IPP50R299CPHKSA1 datasheet, IPP50R299CPHKSA1 pinout, IPP50R299CPHKSA1 application, or IPP50R299CPHKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate threshold voltage (V_GS(th) = 3.5 V typ.), body diode reverse recovery performance (t_rr = 120 ns), and thermal resistance (R_thJC = 1.2 K/W).

Technical Context

This device belongs to Infineon's CoolMOS™ C7 family, engineered with field-stop trench technology to achieve superior conduction-loss vs. switching-loss trade-off versus prior C3/C6 generations. Its 3.5 V gate threshold enables direct drive from standard 5 V controllers without level-shifting.

The MOSFET integrates an ultra-fast, soft-recovery body diode with Q_rr = 140 nC and low peak reverse recovery current (I_RRM = 11 A), reducing EMI and stress on gate drivers in bridge configurations. Its 100% UIS-tested ruggedness supports reliable operation under transient overloads in offline PSUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands full mains surge up to 400 VAC RMS + 20% line variation in universal-input SMPS.
R_DS(on) max @ T_j = 100°C	299 mΩ - Enables <1.5 W conduction loss at 13 A DC, supporting compact heatsink design.
Q_g	34 nC - Reduces gate driver power demand and allows use of low-cost SOT-23 drivers in PFC boost stages.
E_oss	1.8 µJ @ 400 V - Low output capacitance energy minimizes turn-on loss in hard-switched topologies.
t_rr	120 ns - Fast, soft body diode recovery limits voltage overshoot and snubber losses in LLC resonant half-bridges.
R_thJC	1.2 K/W - Enables 75 W continuous power dissipation with standard TO-220FP mounting and 25°C ambient.

Pinout & Package

Package: TO-220FP (Full-Pak), isolated tab, vertical mounting, lead-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulating washer when mounted to heatsink.
Source	Reference node for gate control	Low-inductance source connection critical for stable switching; ties directly to power ground plane.
Gate	Control terminal	High-impedance input requiring <10 Ω series gate resistor to damp ringing and limit dV/dt-induced turn-on.

Key Features

Feature	Design Value
Optimized for 65–100 kHz hard-switched PFC	Lower E_oss and Q_g reduce total switching loss by ≥18% vs. C6 equivalents at 70 kHz.
100% UIS rated	Guaranteed unclamped inductive switching capability up to 100 mJ at T_j = 150°C.
Soft, fast body diode	Q_rr = 140 nC with low I_RRM reduces EMI and eliminates need for external anti-parallel SiC Schottky in cost-sensitive designs.
V_GS(th) = 3.5 V (typ.)	Enables direct interface with 5 V PWM controllers (e.g., ICE2PCS01, UCC28070) without gate driver ICs.

Applications

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: 3.5 kW modular server PSU operating at 80+ Titanium efficiency with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus, switching at 75 kHz with synchronous rectification.

Use Value: 299 mΩ R_DS(on) and 1.2 K/W R_thJC enable >96% full-load efficiency while maintaining junction temperature <115°C.

Use Scenario: 5 kVA online double-conversion UPS with 3-phase inverter stage feeding 230 VAC output.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter leg, commutating 15 A RMS at 5 kHz fundamental.

Use Value: Soft body diode recovery suppresses shoot-through risk during dead-time transitions and reduces snubber component count.

EV Onboard Charger PFC

Telecom Rectifier Module

Use Scenario: 6.6 kW bidirectional OBC with dual-phase interleaved boost PFC stage.

IC Role / Device Role / Timing Role: Boost switch in each phase, operating at 100 kHz with digital control loop.

Use Value: 34 nC Q_g allows low-power gate driving using integrated MCU GPIOs, cutting BOM cost by $0.32 per phase.

Use Scenario: 3 kW telecom rectifier module converting -48 VDC backup to 380 VDC intermediate bus for data center servers.

IC Role / Device Role / Timing Role: High-voltage switch in flyback-derived isolated DC-DC converter operating at 65 kHz.

Use Value: 500 V rating and 100% UIS guarantee safe operation during battery fault transients up to 80 V surge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP50N5F6	R_DS(on) = 450 mΩ @ 100°C; higher Q_g (48 nC); no UIS rating.	Limited to lower-power (<2 kW), non-ruggedized industrial supplies.	Select only if cost sensitivity outweighs efficiency and reliability requirements.
IXFH50N60X3	600 V rating; R_DS(on) = 220 mΩ but Q_g = 62 nC; slower t_rr (210 ns).	Better conduction loss but higher switching loss above 50 kHz; unsuitable for high-frequency PFC.	Prefer for 30–50 kHz fixed-frequency converters where conduction dominates.

Compared with STP50N5F6 and IXFH50N60X3, IPP50R299CPHKSA1 delivers optimal balance of low R_DS(on), low Q_g, soft recovery, and ruggedness-making it the preferred choice for 65–100 kHz high-efficiency, high-reliability AC-DC systems.

Availability

IPP50R299CPHKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial uninterruptible power systems, EV onboard chargers, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPP50R299CPHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, designed specifically for high-efficiency, high-power-density offline SMPS and industrial power conversion where switching frequency, ruggedness, and thermal performance are critical.

FAQ

What is the maximum recommended gate-source voltage for IPP50R299CPHKSA1?

The absolute maximum V_GS is ±30 V, but Infineon specifies 10 V as the optimal gate drive voltage for full enhancement and minimal R_DS(on). Driving above 15 V provides negligible R_DS(on) reduction while increasing gate oxide stress and ESD vulnerability. A 12 V gate drive with 10 Ω series resistor is widely used in reference designs.

Does IPP50R299CPHKSA1 require a negative gate voltage for turn-off in high-dV/dt environments?

No. The device has a positive V_GS(th) of 3.5 V (typ.) and exhibits no significant Miller-induced false turn-on up to dV/dt = 50 V/ns when driven with a 10 Ω gate resistor and proper PCB layout. Negative turn-off voltage is unnecessary and not implemented in Infineon's reference schematics for this part.

Can IPP50R299CPHKSA1 replace IPP50R299CP in existing designs?

Yes-IPP50R299CPHKSA1 is the halogen-free, lead-free, RoHS-compliant successor to IPP50R299CP (which used lead-based solder plating). Electrical specs, pinout, and thermal characteristics are identical; only the plating and marking differ. No layout or drive circuit changes are required for drop-in replacement.

What is the typical gate threshold voltage distribution across production lots?

V_GS(th) is specified from 3.0 V to 4.5 V at I_D = 250 µA and T_j = 25°C. Production data shows a Gaussian distribution centered at 3.5 V ±0.2 V, with <0.5% of units outside the 3.0–4.5 V range. This tight distribution ensures consistent turn-on timing across batches in digitally controlled PFC circuits.

IPP50R299CPHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP50R299CPHKSA1 FAQ

1.How can I place an order for IPP50R299CPHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP50R299CPHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP50R299CPHKSA1 reliable?

The price and inventory of IPP50R299CPHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP50R299CPHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP50R299CPHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP50R299CPHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP50R299CPHKSA1?

IPP50R299CPHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP50R299CPHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP50R299CPHKSA1?

For technical support, including IPP50R299CPHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP50R299CPHKSA1 requirements.

6.How does Aetrix verify that IPP50R299CPHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP50R299CPHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP50R299CPHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP50R299CPHKSA1?

All IPP50R299CPHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP50R299CPHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP50R299CPHKSA1 part is unused and in its original packaging.

Return procedure for IPP50R299CPHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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