Infineon Technologies IPP50R350CPHKSA1
- Part No.:
- IPP50R350CPHKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP50R350CPHKSA1.pdf
- Description:
- MOSFET N-CH 500V 10A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:2,363
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Product details
Overview
IPP50R350CPHKSA1 from Infineon Technologies is a 500 V, 0.35 Ω RDS(on) CoolMOS™ CPl series superjunction N-channel power MOSFET in PG-TO220 package, featuring 19 nC typical gate charge, 5.6 A continuous drain current at TC = 25 °C, and extreme dv/dt ruggedness up to 400 V/ns - optimized for hard- and soft-switching SMPS in industrial lamp ballasts and LCD/PDP TV power supplies.
For engineers reviewing the IPP50R350CPHKSA1 datasheet, IPP50R350CPHKSA1 pinout, IPP50R350CPHKSA1 application, or IPP50R350CPHKSA1 equivalent, key selection criteria include RDS(on) × Qg figure-of-merit, avalanche energy rating (246 mJ), diode reverse recovery performance (Qrr = 2.3 µC), thermal resistance (RthJC = 1.4 K/W), and JEDEC industrial-grade qualification.
Technical Context
This device implements Infineon's 4th-generation CoolMOS™ CP technology with optimized charge distribution for reduced conduction and switching losses. Its ultra-low gate charge (Qg = 19 nC typ.) and low output capacitance (Coss = 46 pF) enable high-frequency operation in PFC and PWM stages while maintaining robust avalanche capability (EAS = 246 mJ).
The integrated body diode exhibits fast reverse recovery (trr = 250 ns) and low Qrr, supporting ZVS/ZCS topologies. Gate threshold voltage (VGS(th) = 2.5–3.5 V) ensures stable turn-on under wide VGS margin, and dv/dt immunity (≥400 V/ns) prevents spurious turn-on in noisy high-voltage environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports 400 V DC-link applications with 25% safety margin for transient overvoltage |
| RDS(on) max @ 25 °C | 0.35 Ω - enables low conduction loss in 5.6 A continuous current SMPS designs |
| Qg typ. | 19 nC - reduces gate drive power and allows use of smaller, lower-cost drivers |
| EAS | 246 mJ - provides single-pulse avalanche robustness without external snubbers in PFC circuits |
| trr | 250 ns - limits diode switching loss and EMI in bridge-leg configurations |
| RthJC | 1.4 K/W - enables efficient heat transfer to heatsink in TO-220 mounting |
| dv/dt ruggedness | ≥400 V/ns - suppresses false triggering in high-slew-rate hard-switched converters |
Pinout & Package
Package: PG-TO220 (3-pin, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. Drain connected to metal tab for direct heatsinking; gate-source isolation rated per JEDEC industrial standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Low-impedance control input; requires <20 V absolute max rating; sensitive to ESD |
| Pin 2 (D) | Drain terminal / heatsink interface | High-voltage power node; electrically connected to metal tab; must be insulated from chassis unless referenced to same potential |
| Pin 3 (S) | Source terminal | Return path for load current; reference for gate drive; common node for current sensing in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Lowest RDS(on) × Qg FoM | 0.35 Ω × 19 nC = 6.65 Ω·nC - minimizes combined conduction + switching loss in 65–300 kHz SMPS |
| Extreme dv/dt rating | ≥400 V/ns - eliminates need for gate resistors or RC snubbers in high-dV/dt PFC boost stages |
| Industrial-grade qualification | JEDEC JESD22-A108 qualified - ensures reliability across –55 °C to +150 °C ambient in lamp ballast and display power systems |
| Ultra-low Qrr diode | 2.3 µC - reduces reverse recovery loss and EMI generation in synchronous rectification and half-bridge topologies |
Applications
| Lamp Ballast Power Supply | LCD TV Main Switching PSU |
|---|---|
Use Scenario: High-efficiency electronic ballast for fluorescent lamps operating at 25–100 kHz with active PFC stage. IC Role / Device Role / Timing Role: Primary-side switch in boost PFC and resonant half-bridge inverter stages. Use Value: Low Qg and high dv/dt immunity ensure stable operation during lamp ignition transients and line surges. | Use Scenario: Main 12–24 V DC output supply in LCD TV backlights and logic boards. IC Role / Device Role / Timing Role: Primary-side MOSFET in LLC resonant converter delivering >100 W with <1% THD. Use Value: 246 mJ avalanche energy protects against output short-circuit events without derating. |
| PDP TV Power Module | Industrial AC-DC Adapter |
Use Scenario: Sustaining and address driver power supply in plasma display panels requiring tight voltage regulation and low noise. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge isolated DC-DC stage feeding sustain circuitry. Use Value: 0.35 Ω RDS(on) at 150 °C maintains efficiency at elevated ambient temperatures inside sealed enclosures. | Use Scenario: Universal-input 100–240 VAC, 50–60 Hz industrial adapter powering PLC I/O modules and sensors. IC Role / Device Role / Timing Role: Primary switch in flyback topology with 85–264 VAC input range and 15 kV ESD immunity requirement. Use Value: RoHS-compliant, halogen-free mold compound meets IPC-1752A material declaration requirements for industrial OEMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | RDS(on) = 0.95 Ω, Qg = 22 nC, VDS = 500 V, Zener-protected avalanche | Higher conduction loss; lower switching speed; less suitable for >100 kHz PFC | Prefer where cost sensitivity outweighs efficiency targets and thermal headroom exists |
| IXTP50N10P | RDS(on) = 0.1 Ω, VDS = 100 V, Qg = 65 nC - not voltage-compatible | Cannot replace in 400 V DC-link systems due to insufficient breakdown rating | Not recommended as direct alternative; only viable in low-voltage (<150 V) industrial motor drives |
Compared with STP5NK50ZFP and IXTP50N10P, IPP50R350CPHKSA1 delivers superior FoM (6.65 vs. 20.9 Ω·nC) and higher voltage margin, making it optimal for compact, high-efficiency 400 V PFC and resonant converters where thermal management and EMI control are critical.
Availability
IPP50R350CPHKSA1 is available at Aetrix Electronics and suitable for lamp ballast power supplies, LCD TV main switching PSUs, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.
Supply support for IPP50R350CPHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The CoolMOS™ CP product line targets high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial lighting, consumer displays, and server power supplies - engineered for lowest RDS(on) × Qg and robust avalanche behavior.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The IPP50R350CPHKSA1 supports 6 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 10 A rating at 25 °C due to thermal resistance (RthJC = 1.4 K/W) and junction temperature limit of 150 °C.
Does this MOSFET require a gate resistor for safe operation?
A gate resistor is recommended to control dV/dt and prevent oscillation, though not strictly required due to its intrinsic dv/dt ruggedness (≥400 V/ns). Typical values range from 10 Ω to 47 Ω depending on driver strength and layout parasitics - confirmed by Infineon's application note AN2015-04 for CoolMOS™ CP devices.
Is the drain-source breakdown voltage tested at elevated temperature?
Yes, V(BR)DSS is characterized from –60 °C to +150 °C, with minimum 440 V at Tj = 150 °C. The datasheet Figure 12 shows VBR(DSS) decreasing linearly with temperature at ~0.5 V/°C, ensuring 500 V rating at room temperature and sufficient margin at full operating range.
Can the integrated body diode replace an external fast recovery diode in a buck converter?
No - while the body diode has trr = 250 ns and Qrr = 2.3 µC, its forward voltage (VSD = 0.9–1.2 V) is higher than Schottky alternatives, and its reverse recovery behavior is not optimized for unidirectional freewheeling. External diodes remain preferred for high-efficiency buck topologies.
IPP50R350CPHKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 350mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1020 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 89W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
IPP50R350CPHKSA1 FAQ
1.How can I place an order for IPP50R350CPHKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP50R350CPHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP50R350CPHKSA1 reliable?
The price and inventory of IPP50R350CPHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP50R350CPHKSA1 is usually 5 days.
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IPP50R350CPHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP50R350CPHKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP50R350CPHKSA1?
For technical support, including IPP50R350CPHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP50R350CPHKSA1 requirements.
6.How does Aetrix verify that IPP50R350CPHKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP50R350CPHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP50R350CPHKSA1 meets industry standards.
7.What is the process for return or replacement of IPP50R350CPHKSA1?
All IPP50R350CPHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP50R350CPHKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP50R350CPHKSA1 part is unused and in its original packaging.
Return procedure for IPP50R350CPHKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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