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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP50R350CPXKSA1

Name: IPP50R350CPXKSA1
Brand: Infineon Technologies
SKU: IPP50R350CPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP50R350CPXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP50R350CPXKSA1.pdf

Description:: MOSFET N-CH 550V 10A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP50R350CPXKSA1 from Infineon Technologies is a 500 V, 0.35 Ω (max) CoolMOS™ CP superjunction power MOSFET in PG-TO220 package, optimized for hard- and soft-switching SMPS topologies with ultra-low gate charge (19 nC typ), extreme dv/dt ruggedness (400 V/ns), and industrial-grade qualification per JEDEC. It delivers high peak current capability (22 A pulsed) and integrated fast-recovery body diode (t_rr = 250 ns) for PFC and PWM stages in lamp ballasts and flat-panel TV power supplies.

For engineers reviewing the IPP50R350CPXKSA1 datasheet, IPP50R350CPXKSA1 pinout, IPP50R350CPXKSA1 application, or IPP50R350CPXKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_gd ratio for switching loss optimization, avalanche energy rating (246 mJ single-pulse), and TO-220 thermal resistance (R_thJC = 1.4 K/W) for conduction-limited designs.

Technical Context

This superjunction MOSFET employs charge-compensation cell architecture to achieve low R_DS(on) × Q_g figure-of-merit (0.35 Ω × 19 nC), enabling high-efficiency operation in continuous conduction mode (CCM) PFC and resonant LLC converters. Its 500 V V_(BR)DSS rating supports 400 V DC-link applications with margin, while dv/dt ruggedness up to 400 V/ns ensures robustness against parasitic ringing in high-frequency layouts.

The integrated body diode features low reverse recovery charge (Q_rr = 2.3 µC) and peak reverse recovery current (I_rrm = 19 A), reducing commutation losses in bridge configurations. Thermal performance is defined by R_thJC = 1.4 K/W and T_j range of –55 °C to 150 °C, supporting industrial ambient conditions without derating at T_C ≤ 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - Supports 400 V DC-link with 25% voltage margin for surge and ripple
R_DS(on) max @ 25 °C	0.35 Ω - Enables <5.6 A continuous conduction with <11 W conduction loss at T_C = 25 °C
Q_g typ	19 nC - Reduces gate drive power and enables >100 kHz switching in hard-switched topologies
E_AS single-pulse	246 mJ - Withstands unclamped inductive switching events up to I_D = 3.7 A at V_DD = 50 V
t_rr	250 ns - Limits diode commutation loss and EMI generation during ZVS transitions
R_thJC	1.4 K/W - Allows 100 W power dissipation with ≤140 K junction-to-case temperature rise
dv/dt ruggedness	400 V/ns - Prevents false turn-on in high-di/dt half-bridge and phase-shifted full-bridge circuits

Pinout & Package

Package: PG-TO220 (3-pin, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. Drain-connected metal tab provides low-inductance, high-current path and direct thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; low input capacitance (C_iss = 1020 pF) minimizes driver stress
Pin 2 (Drain / Tab)	High-side power terminal	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and load current; critical for stable switching waveform integrity

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	Optimizes total switching + conduction loss in 65–300 kHz SMPS, reducing heatsink size by ≥30% vs. standard MOSFETs
Ultra-low Q_gd/Q_g ratio	~32% (6 nC/19 nC) - Shortens Miller plateau duration, improving dV/dt immunity and reducing cross-conduction risk
Industrial-grade qualification	Qualified per JEDEC JESD22-A108 for 150 °C operating junction temperature and 1000-hr HTRB reliability
Halogen-free mold compound	Complies with IPC-4101D/126 and RoHS 2011/65/EU, enabling use in environmentally regulated consumer electronics
Fast body diode	Q_rr = 2.3 µC and t_rr = 250 ns - Enables efficient synchronous rectification replacement in flyback and LLC secondaries

Applications

Lamp Ballast Power Stage

LCD TV Main Switching Supply

Use Scenario: High-efficiency electronic ballast driving CCFL or LED backlight with CCM boost PFC followed by half-bridge inverter.

IC Role / Device Role / Timing Role: Primary-side switching device in PFC boost stage and resonant inverter half-bridge leg.

Use Value: Low Q_g and high dv/dt ruggedness enable stable 70 kHz PFC operation with <0.9% THD; R_DS(on) stability over temperature maintains efficiency across 0–50 °C ambient.

Use Scenario: 150–200 W main power supply for LCD TV with active clamp forward or LLC resonant topology.

IC Role / Device Role / Timing Role: High-side switch in primary-side LLC half-bridge, handling 400 V DC-link and 100–300 kHz switching.

Use Value: 246 mJ E_AS withstands transformer leakage inductance spikes; low C_oss (46 pF) reduces capacitive turn-off loss and improves ZVS initiation.

PDP TV Sustain Circuit

Industrial AC-DC Adapter

Use Scenario: Sustain driver module generating 200–300 V pulses at 100–200 kHz to maintain plasma cell discharge in PDP panels.

IC Role / Device Role / Timing Role: Fast-switching power switch in H-bridge sustain output stage with bidirectional current flow.

Use Value: Body diode t_rr = 250 ns and I_rrm = 19 A support clean current reversal without tail current; TO-220 tab enables direct mounting to aluminum chassis for thermal management.

Use Scenario: 100–150 W universal-input AC-DC adapter for industrial control systems requiring long-term reliability and wide temperature operation.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback converter operating from –25 °C to 70 °C ambient.

Use Value: R_DS(on) increase only 2.5× from 25 °C to 150 °C (0.32 Ω → 0.80 Ω), ensuring consistent efficiency across full industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 0.95 Ω (max), Q_g = 22 nC, V_DS = 500 V, TO-220FP package (isolated drain)	Higher conduction loss limits use to <3 A continuous; lower dv/dt rating (200 V/ns) restricts high-frequency hard-switching	Select when cost sensitivity outweighs efficiency targets and layout parasitics are tightly controlled
IXFH50N50P	R_DS(on) = 0.12 Ω (max), Q_g = 120 nC, V_DS = 500 V, TO-247 package	Lower R_DS(on) but 6× higher Q_g increases gate drive loss and EMI; larger footprint requires PCB redesign	Select for high-current (<15 A), low-frequency (<65 kHz) applications where thermal mass dominates over switching loss

Compared with STP5NK50ZFP and IXFH50N50P, IPP50R350CPXKSA1 offers optimal balance of low R_DS(on), ultra-low Q_g, and industry-proven ruggedness-making it preferred for compact, high-frequency, high-reliability CCM PFC and resonant converters where thermal and EMI constraints are critical.

Availability

IPP50R350CPXKSA1 is available at Aetrix Electronics and suitable for lamp ballast power stages, LCD TV main switching supplies, and industrial AC-DC adapters requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP50R350CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CP family-designed specifically for high-efficiency, high-power-density switched-mode power supplies targeting consumer electronics, lighting, and industrial power conversion where low gate charge and ruggedness are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) for IPP50R350CPXKSA1 is 6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced R_DS(on) temperature coefficient and safe operating area (SOA) limitations at elevated temperatures.

Does this MOSFET require negative gate voltage for reliable turn-off?

No. The IPP50R350CPXKSA1 has a gate threshold voltage (V_GS(th)) of 2.5–3.5 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for guaranteed turn-off; applying –5 V is unnecessary and not recommended per datasheet guidelines.

Can the body diode be used for synchronous rectification in a flyback converter?

Yes-the integrated body diode exhibits t_rr = 250 ns and Q_rr = 2.3 µC, enabling usable performance in discontinuous conduction mode (DCM) flyback secondaries up to 100 kHz. However, for high-efficiency synchronous rectification above 65 kHz, an external Schottky or MOSFET-based SR controller is recommended.

Is the PG-TO220 package lead-free and RoHS compliant?

Yes. The IPP50R350CPXKSA1 uses Pb-free lead plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. Lead-free soldering is supported with peak wave-soldering temperature of 260 °C at 1.6 mm from case for 10 s.

IPP50R350CPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 370µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP50R350CPXKSA1 FAQ

1.How can I place an order for IPP50R350CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP50R350CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP50R350CPXKSA1 reliable?

The price and inventory of IPP50R350CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP50R350CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP50R350CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP50R350CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP50R350CPXKSA1?

IPP50R350CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP50R350CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP50R350CPXKSA1?

For technical support, including IPP50R350CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP50R350CPXKSA1 requirements.

6.How does Aetrix verify that IPP50R350CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP50R350CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP50R350CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP50R350CPXKSA1?

All IPP50R350CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP50R350CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP50R350CPXKSA1 part is unused and in its original packaging.

Return procedure for IPP50R350CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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