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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP530N15N3GXKSA1

Name: IPP530N15N3GXKSA1
Brand: Infineon Technologies
SKU: IPP530N15N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP530N15N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP530N15N3GXKSA1.pdf

Description:: MOSFET N-CH 150V 21A TO220-3

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Product details

Overview

IPP530N15N3GXKSA1 from Infineon Technologies is a 150 V, 21 A N-channel enhancement-mode power MOSFET in PG-TO220-3 package, featuring 53 mΩ max R_DS(on) at V_GS = 10 V, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-frequency switching in DC-DC converters and synchronous rectifiers.

For engineers reviewing the IPP530N15N3GXKSA1 datasheet, IPP530N15N3GXKSA1 pinout, IPP530N15N3GXKSA1 application, or IPP530N15N3GXKSA1 equivalent, key selection criteria include its 84 A pulsed drain current capability, 60 mJ single-pulse avalanche energy, 8.7–12 nC total gate charge, and thermal resistance of 2.2 K/W (junction-to-case), critical for thermally constrained industrial power stages.

Technical Context

This MOSFET employs Infineon's OptiMOSTM3 silicon process, delivering low conduction loss via 44–53 mΩ R_DS(on) and fast switching with 9 ns turn-on delay, 9 ns rise time, and 13 ns turn-off delay under standard 1.6 Ω gate drive. Its 667–887 pF input capacitance and 3.4 pF reverse transfer capacitance support stable high-speed gate control.

The integrated body diode exhibits 1.0–1.2 V forward voltage at 21 A and 229 nC reverse recovery charge, enabling efficient synchronous rectification. JEDEC-qualified for industrial applications, it sustains operation from –55 °C to +175 °C with Pb-free, halogen-free, RoHS-compliant plating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 120 V bus designs with 25 % safety margin against transients
R_DS(on), max	53 mΩ at V_GS = 10 V - enables ≤1.1 W conduction loss at 18 A continuous drain current
I_D, cont	21 A at T_C = 25 °C - defines thermal design baseline for heatsink sizing
E_AS	60 mJ - withstands single inductive switching events up to 18 A with 25 Ω gate resistor
Q_g	8.7–12 nC - determines gate driver peak current requirement (~1.2 A for 10 ns rise)
R_thJC	2.2 K/W - sets minimum thermal interface conductance needed for 175 °C T_j limit
t_r/t_f	9 ns / 3 ns - enables >1 MHz hard-switching in resonant topologies without excessive switching loss
V_GS(th)	2–4 V - ensures reliable turn-on with standard 5 V logic-level gate drivers

Pinout & Package

IPP530N15N3GXKSA1 uses the PG-TO220-3 through-hole package with isolated tab (drain-connected), offering mechanical robustness and direct heatsink mounting. Thermal performance relies on proper mounting torque and thermal compound application to the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage current and ESD protection
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless system ground referenced

Key Features

Feature	Design Value
N-channel normal-level gate threshold	2–4 V V_GS(th) enables compatibility with 3.3 V and 5 V microcontroller GPIOs without level-shifting
Optimized FOM (Q_g × R_DS(on))	~460–636 pC·Ω - balances switching speed and conduction loss for 300 kHz–1 MHz SMPS
175 °C rated junction temperature	Supports operation in sealed enclosures or high-ambient environments without derating below 100 °C ambient
Integrated robust body diode	229 nC Q_rr and 80 ns t_rr allow use in synchronous buck outputs without external Schottky
JEDEC qualification	Complies with J-STD-20 and JESD22 for industrial reliability, including temperature cycling and HAST

Applications

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 12 V input, 0.8–1.8 V output multiphase buck converters supplying CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase legs.

Use Value: 53 mΩ R_DS(on) and 8.7 nC Q_g minimize both conduction and gate drive losses at 500 kHz–1 MHz switching.

Use Scenario: 3-phase inverter stage for 0.5–2 kW brushless DC motors in PLC-controlled factory automation.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 15 A RMS motor phase current with PWM commutation.

Use Value: 60 mJ E_AS and 175 °C T_j rating ensure fault tolerance during short-circuit events and sustained overload conditions.

Solar Microinverters

Telecom DC-DC Modules

Use Scenario: Isolated full-bridge secondary-side synchronous rectification in 250–500 W photovoltaic inverters.

IC Role / Device Role / Timing Role: Output rectifier in center-tapped or active-clamp forward topology.

Use Value: 1.0–1.2 V V_SD and low Q_rr reduce reverse recovery loss and improve efficiency above 96 % at full load.

Use Scenario: 48 V input, 12 V/24 V output non-isolated buck converters powering base station RF modules.

IC Role / Device Role / Timing Role: Primary power switch in high-efficiency POL (point-of-load) regulators.

Use Value: 2.2 K/W R_thJC allows direct heatsink attachment for compact 25 mm × 25 mm board space constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF640NPBF	R_DS(on) = 150 mΩ @ 10 V; higher Q_g (44 nC); lower V_DS (200 V)	Less suitable for high-current, high-frequency SMPS due to higher conduction and switching loss	Prefer only where cost sensitivity outweighs efficiency targets and 200 V rating is mandatory
STP16NF15	R_DS(on) = 120 mΩ @ 10 V; 150 V rating; 16 A I_D; no JEDEC industrial qualification	Limited to consumer-grade or non-safety-critical 12–24 V systems	Select when lower current (<16 A) and relaxed reliability requirements apply

Compared with IRF640NPBF and STP16NF15, IPP530N15N3GXKSA1 delivers 2.8× lower R_DS(on), 5.6× lower Q_g, and certified industrial qualification-making it optimal for thermally dense, high-reliability 150 V power stages where efficiency and lifetime are prioritized over unit cost.

Availability

IPP530N15N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and telecom DC-DC modules requiring stable component supply across multi-year production cycles.

Supply support for IPP530N15N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM3 power transistor family, engineered specifically for high-efficiency, high-frequency switching applications in industrial power supplies, motor controls, and renewable energy systems.

FAQ

What is the maximum allowable gate-source voltage for IPP530N15N3GXKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 0 V to 15 V being typical for robust switching. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast transitions.

Does IPP530N15N3GXKSA1 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 21 A continuous forward current rating, 1.0–1.2 V forward voltage at 21 A and 25 °C, 229 nC reverse recovery charge, and 80 ns reverse recovery time. These values are measured at V_GS = 0 V and enable use in synchronous rectification without external diodes in many topologies.

Can IPP530N15N3GXKSA1 be used in avalanche mode, and what is its rated energy capability?

Yes, it is rated for repetitive and single-pulse avalanche operation. The datasheet specifies 60 mJ single-pulse avalanche energy at I_D = 18 A and R_GS = 25 Ω. This rating assumes proper PCB layout, heatsinking, and gate drive to avoid thermal runaway during transient overvoltage events.

What is the thermal resistance from junction to case, and how should it be applied in thermal design?

Junction-to-case thermal resistance is 2.2 K/W. This value applies when the metal tab (drain) is mounted to a heatsink with defined interface conditions (e.g., thermal paste, 0.5 N·m torque). It does not include junction-to-ambient path; designers must add heatsink thermal resistance and interface resistance to calculate total T_j.

IPP530N15N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 53mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 887 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP530N15N3GXKSA1 FAQ

1.How can I place an order for IPP530N15N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP530N15N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP530N15N3GXKSA1 reliable?

The price and inventory of IPP530N15N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP530N15N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP530N15N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP530N15N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP530N15N3GXKSA1?

IPP530N15N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP530N15N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP530N15N3GXKSA1?

For technical support, including IPP530N15N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP530N15N3GXKSA1 requirements.

6.How does Aetrix verify that IPP530N15N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP530N15N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP530N15N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP530N15N3GXKSA1?

All IPP530N15N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP530N15N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP530N15N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP530N15N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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