Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R074C6XKSA1

Name: IPP60R074C6XKSA1
Brand: Infineon Technologies
SKU: IPP60R074C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP60R074C6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R074C6XKSA1.pdf

Description:: MOSFET N-CH 600V 57.7A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,659

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP60R074C6XKSA1 from Infineon Technologies is a 600 V, 57.7 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-220 package, featuring R_DS(on) = 0.074 Ω (max), Q_g = 138 nC (typ), and E_oss = 10.8 µJ @ 400 V. It delivers high commutation ruggedness (di/dt = 300 A/µs) and low switching losses for hard-switched PFC and PWM stages in industrial SMPS.

For engineers reviewing the IPP60R074C6XKSA1 datasheet, IPP60R074C6XKSA1 pinout, IPP60R074C6XKSA1 application, or IPP60R074C6XKSA1 equivalent, key selection criteria include its 600 V blocking voltage, 0.074 Ω conduction resistance at 10 V gate drive, 138 nC total gate charge, and validated operation up to 150°C junction temperature in TO-220 mounting.

Technical Context

This CoolMOS™ C6 device implements a superjunction cell structure optimized for high-voltage switching efficiency. Its gate threshold voltage (V_GS(th)) ranges 2.5–3.5 V, and plateau voltage is 5.5 V - enabling robust gate drive compatibility with standard 12 V controllers while maintaining low EMI during transitions.

Dynamic performance is defined by t_d(on) = 11 ns, t_r = 7 ns, t_d(off) = 56 ns, and t_f = 4 ns under 400 V / 21 A conditions. The body diode supports 50 A continuous forward current and exhibits t_rr = 560 ns with Q_rr = 12 µC, making it suitable for resonant topologies requiring controlled reverse recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., PFC, telecom rectifiers)
R_DS(on), max	0.074 Ω @ V_GS = 10 V, T_J = 25°C - enables <1.5 W conduction loss at 50 A, reducing heatsink requirements
Q_g, typ	138 nC - determines gate driver current demand (~1.4 A peak for 100 ns rise time), critical for ZVS/ZCS timing control
E_oss	10.8 µJ @ 400 V - quantifies output capacitance energy loss per switching cycle, directly impacting efficiency above 100 kHz
I_D,pulse	151 A - supports short-duration overload conditions in UPS and solar inverters without thermal runaway
di/dt rating	300 A/µs - ensures reliable commutation in hard-switched bridge legs without parasitic turn-on or oscillation

Pinout & Package

Package: PG-TO220 (standard through-hole, non-FullPAK), with drain connected to tab (pin 2), gate on pin 1, and source on pin 3. Mounting torque: 60 Ncm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires low-inductance layout due to 138 nC Q_g and fast switching edges
Pin 2 (Drain)	High-voltage power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating pad
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and main current; layout must minimize source inductance to preserve dv/dt ruggedness

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with R_DS(on) × Q_g figure-of-merit of 10.2 Ω·nC - 30% lower than prior C3 generation
High commutation ruggedness	Validated 300 A/µs di/dt capability with no secondary breakdown - essential for LLC and phase-shifted full-bridge designs
Industrial-grade qualification	Qualified per JEDEC J-STD-20 and JESD22 - supports 15-year field life in server PSUs and telecom rectifiers
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets IPC-J-STD-609A Class 1 and IEC 61249-2-21

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW front-end PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus and 50 A RMS input current.

Use Value: 0.074 Ω R_DS(on) reduces conduction loss by 22% vs. legacy 650 V MOSFETs, enabling 96.2% PFC efficiency at full load.

Use Scenario: Active clamp forward converter primary switch in -48 V telecom system.

IC Role / Device Role / Timing Role: Main power switch with 600 V blocking and 138 nC Q_g supporting 200 kHz operation.

Use Value: Low E_oss (10.8 µJ) minimizes dead-time loss, improving light-load regulation and reducing snubber dissipation.

Solar Inverter DC-DC Stage

Industrial UPS Inverter

Use Scenario: Isolated DC-DC stage stepping 1000 V PV string down to 400 V intermediate bus.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology with bidirectional soft-switching.

Use Value: 300 A/µs di/dt rating ensures reliable body diode commutation during zero-voltage switching transitions.

Use Scenario: H-bridge in 10 kVA online UPS inverter output stage.

IC Role / Device Role / Timing Role: Hard-switched power switch handling 151 A pulsed current during overload events.

Use Value: Avalanche energy rating (E_AS = 923 mJ) provides margin against inductive kickback during grid fault interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 0.065 Ω, Q_g = 120 nC, but V_DS = 600 V only at T_J ≤ 125°C; no specified di/dt rating	Lacks validated 300 A/µs commutation ruggedness - unsuitable for resonant topologies requiring fast body diode recovery	Select when gate drive strength is limited and avalanche robustness is secondary to conduction loss
IXFH60N60X3	R_DS(on) = 0.072 Ω, Q_g = 145 nC, E_oss = 15.2 µJ @ 400 V - higher switching loss than IPP60R074C6XKSA1	Higher E_oss increases turn-off loss in >150 kHz designs - limits usable frequency range in compact adapters	Select when legacy design uses IXYS footprint and thermal management accommodates +12% switching loss

Compared with STP60N6F6 and IXFH60N60X3, IPP60R074C6XKSA1 offers superior balance of low R_DS(on), low E_oss, and industry-leading di/dt ruggedness - making it optimal for high-efficiency, high-reliability industrial SMPS where both conduction and switching losses must be minimized across wide load and temperature ranges.

Availability

IPP60R074C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverter DC-DC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP60R074C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 product line was engineered to extend superjunction MOSFET performance into high-frequency, high-efficiency industrial power conversion - targeting PFC, resonant converters, and UPS systems demanding low E_oss and robust commutation.

FAQ

What is the maximum continuous drain current for IPP60R074C6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 31.6 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limitations of the TO-220 package with R_thJC = 0.26 °C/W - actual current capability depends on heatsink design and ambient airflow.

Does IPP60R074C6XKSA1 require a negative gate voltage for safe turn-off?

No. The device operates reliably with 0 V to 10 V gate drive and has no requirement for negative turn-off bias. Its V_GS(th) of 2.5–3.5 V and gate plateau at 5.5 V ensure clean turn-on even with standard 12 V controllers and resistive gate networks.

How does the body diode performance compare to standard silicon diodes in synchronous rectification?

The integrated body diode has V_F = 0.9 V at 21 A and t_rr = 560 ns, which is slower and less efficient than discrete Schottky or SiC diodes. It is intended for commutation-not steady-state conduction-so synchronous rectification requires external FETs or diodes for optimal efficiency.

Is IPP60R074C6XKSA1 compatible with lead-free reflow soldering processes?

No - this part uses a TO-220 package qualified only for wave soldering at leads (260°C for 10 s at 1.6 mm from case). Reflow is not recommended due to internal wirebond and die attach limitations; hand-soldering or wave processes must be used per Infineon's packaging guidelines.

IPP60R074C6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 57.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 74mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.4mA

Gate Charge (Qg) (Max) @ Vgs:: 138 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3020 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 480.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R074C6XKSA1 FAQ

1.How can I place an order for IPP60R074C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R074C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R074C6XKSA1 reliable?

The price and inventory of IPP60R074C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R074C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R074C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R074C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R074C6XKSA1?

IPP60R074C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R074C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R074C6XKSA1?

For technical support, including IPP60R074C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R074C6XKSA1 requirements.

6.How does Aetrix verify that IPP60R074C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R074C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R074C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R074C6XKSA1?

All IPP60R074C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R074C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R074C6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R074C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…