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Infineon Technologies IPP60R099C7XKSA1
- Part No.:
- IPP60R099C7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP60R099C7XKSA1.pdf
- Description:
- MOSFET N-CH 600V 22A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,181
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Product details
Overview
IPP60R099C7XKSA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in TO-220 package, featuring 99 mΩ max RDS(on), 42 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching SMPS topologies including PFC and LLC resonant converters for server, telecom, and solar inverters.
For engineers reviewing the IPP60R099C7XKSA1 datasheet, IPP60R099C7XKSA1 pinout, IPP60R099C7XKSA1 application, or IPP60R099C7XKSA1 equivalent, key selection criteria include RDS(on)×Eoss figure-of-merit, body diode commutation speed (360 A/µs), and industrial-grade JEDEC qualification for high-reliability power conversion designs.
Technical Context
This CoolMOS™ C7 device implements a superjunction structure optimized for high-voltage switching with low conduction and switching losses. Its 600V VDS rating, 99 mΩ RDS(on) at 10V VGS, and 4.95 µJ Eoss at 400V enable efficient operation in continuous conduction mode PFC and high-frequency LLC half-bridge stages.
The MOSFET supports robust unclamped inductive switching with 97 mJ single-pulse avalanche energy and exhibits enhanced dv/dt immunity (120 V/ns) to reduce false triggering in noisy high-dV/dt environments. Its body diode delivers 350 ns reverse recovery time and 27 A peak reverse recovery current under standardized test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - Withstands transient overvoltage up to 650 V without breakdown, enabling 400 V bus designs with margin |
| RDS(on) max | 99 mΩ @ Tj=150°C - Low conduction loss at full operating temperature for thermal stability |
| Qg typ | 42 nC - Enables fast, low-loss gate driving with moderate drive strength requirements |
| Eoss @ 400 V | 4.95 µJ - Reduces turn-off energy loss and supports higher switching frequencies |
| dv/dt ruggedness | 120 V/ns - Resists parasitic turn-on during high-slew-rate switching transitions |
| ID,pulse | 83 A - Supports short-duration overload and inrush current handling in SMPS startup |
| Body diode dI/dt | 360 A/µs - Enables reliable zero-voltage switching (ZVS) in resonant topologies |
Pinout & Package
IPP60R099C7XKSA1 uses a standard TO-220 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring appropriate insulation when mounted on heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Lead) | Gate | High-impedance control input; requires low-inductance gate loop to minimize oscillation during fast switching |
| Pin 2 (Tab) | Drain | Main high-voltage power terminal; electrically connected to metal tab for thermal and electrical path |
| Pin 3 (Lead) | Source | Reference node for gate drive and current sensing; connects to power ground or low-side shunt |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables RDS(on)×A < 1 Ω·mm² - Delivers highest power density among 600V MOSFETs in TO-220 |
| Hard- and soft-switching compatibility | Validated in PFC and LLC topologies - Eliminates need for separate device families across SMPS stages |
| JEDEC industrial qualification | Complies with J-STD-20 and JESD22 - Ensures reliability in extended-temperature, long-life applications |
| Low Eoss/Qg FOM | Best-in-class RDS(on)×Eoss and RDS(on)×Qg - Directly reduces total switching loss in high-frequency designs |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering >1 kW output. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to intermediate bus. Use Value: 120 V/ns dv/dt ruggedness prevents spurious turn-on during fast transformer reset edges. | Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: Unidirectional conduction switch shaping input current waveform to match sinusoidal voltage. Use Value: 4.95 µJ Eoss enables >98% efficiency at full load while maintaining thermal margin. |
| Solar Inverter DC-DC Stage | Industrial UPS Inverter |
Use Scenario: Isolated DC-DC converter feeding battery charging circuit in string-level solar inverter. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS capability. Use Value: 360 A/µs body diode dI/dt ensures clean commutation during zero-voltage transitions. | Use Scenario: Half-bridge inverter stage converting 400 V DC bus to 230 V AC output in online UPS. IC Role / Device Role / Timing Role: High-reliability switching element handling continuous 36 A current at 150 °C junction temperature. Use Value: JEDEC industrial qualification guarantees 10+ year field life under cyclic thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R099C6XKSA1 | Same RDS(on) but higher Qg (49 nC) and Eoss (6.1 µJ); older C6 generation | Limited to lower-frequency PFC (<65 kHz) due to higher switching loss | Select only if legacy design reuse or cost sensitivity outweighs efficiency gain |
| IPW60R099C7FKSA1 | Same die, TO-247 package; lower RthJC (0.5 K/W vs. 1.135 K/W); identical electrical specs | Required for >100 W/cm² power density or forced-air cooling above 85 W dissipation | Choose for higher thermal headroom or upgrade paths beyond TO-220 limits |
Compared with IPP60R099C6XKSA1, the C7 offers measurable efficiency gains in high-frequency PFC; versus IPW60R099C7FKSA1, it trades thermal performance for lower cost and board space-ideal for cost-constrained, naturally cooled 50–85 W/in² designs.
Availability
IPP60R099C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverter DC-DC stages requiring stable component supply and long-term industrial qualification.
Supply support for IPP60R099C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The CoolMOS™ C7 product line targets high-efficiency, high-power-density AC-DC and DC-DC conversion systems where reduced switching loss and improved thermal behavior are critical design objectives.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IPP60R099C7XKSA1 supports 14 A continuous drain current at TC = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the 150°C maximum junction temperature limit.
Is the drain tab electrically isolated from the leads?
No-the metal tab is internally connected to the drain terminal (Pin 2), as confirmed in the "Package Outlines" section and pin assignment table. Electrical isolation must be implemented externally using insulating washers or pads when mounting to a heatsink.
Does this MOSFET require a gate resistor for stable operation?
Yes-a gate resistor (typically 5–10 Ω) is required to dampen ringing and control switching speed. The datasheet specifies timing parameters (e.g., td(on), tr) using RG = 5.3 Ω, confirming its necessity for reproducible switching behavior and EMI control.
Can IPP60R099C7XKSA1 replace IPP60R099C6XKSA1 without layout changes?
Yes-both share identical TO-220 package outline, pinout, and footprint. However, the C7's lower Eoss and Qg may reduce gate drive loss and improve efficiency, potentially allowing minor gate resistor adjustment to optimize switching speed and EMI.
IPP60R099C7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 99mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1819 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
IPP60R099C7XKSA1 FAQ
1.How can I place an order for IPP60R099C7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP60R099C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP60R099C7XKSA1 reliable?
The price and inventory of IPP60R099C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R099C7XKSA1 is usually 5 days.
3.What payment methods are accepted for IPP60R099C7XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R099C7XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP60R099C7XKSA1?
IPP60R099C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP60R099C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP60R099C7XKSA1?
For technical support, including IPP60R099C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R099C7XKSA1 requirements.
6.How does Aetrix verify that IPP60R099C7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP60R099C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R099C7XKSA1 meets industry standards.
7.What is the process for return or replacement of IPP60R099C7XKSA1?
All IPP60R099C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R099C7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP60R099C7XKSA1 part is unused and in its original packaging.
Return procedure for IPP60R099C7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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