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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R099P6XKSA1

Name: IPP60R099P6XKSA1
Brand: Infineon Technologies
SKU: IPP60R099P6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R099P6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R099P6XKSA1.pdf

Description:: MOSFET N-CH 600V 37.9A TO220-3

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Product details

Overview

IPP60R099P6XKSA1 from Infineon Technologies is a 600 V, 99 mΩ superjunction N-channel MOSFET in TO-220 package, optimized for high-efficiency hard-switching and resonant PFC/SMPS stages. It delivers 37.9 A continuous drain current at 25°C, 70 nC total gate charge, and 8.8 µJ output energy at 400 V-enabling compact, cooler-running server power supplies and industrial UPS systems.

For engineers reviewing the IPP60R099P6XKSA1 datasheet, IPP60R099P6XKSA1 pinout, IPP60R099P6XKSA1 application, or IPP60R099P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven switching loss trade-offs, dv/dt ruggedness in bridge configurations, and thermal resistance (0.45 °C/W) for heatsink-limited designs.

Technical Context

This CoolMOS™ P6 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping to achieve ultra-low FOM (R_DS(on) × Q_g = 6.93 Ω·nC). Its 6.1 V gate plateau voltage and 24 nC Q_gd support robust Miller immunity in high-dV/dt half-bridge topologies.

The MOSFET features 100 V/ns intrinsic dv/dt ruggedness and 300 A/µs body diode commutation capability-critical for ZVS/ZCS operation in LLC resonant converters and active clamp forward designs operating up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus with 50% safety margin in telecom rectifiers and industrial PFC stages
R_DS(on),max	99 mΩ @ T_j = 25°C - enables <1.5 W conduction loss at 38 A in 100 kHz hard-switched boost PFC
Q_g,typ	70 nC - determines gate drive power requirement (~1.4 W at 200 kHz, 13 V swing)
E_oss@400V	8.8 µJ - sets turn-off energy loss independent of load current in high-frequency PWM
R_thJC	0.45 °C/W - allows 278 W power dissipation with ≤125°C case temperature rise
I_D,pulse	109 A - supports short-circuit withstand in UPS inverters during fault conditions
V_GS(th)	3.5–4.5 V - ensures reliable turn-on with standard 5 V or 12 V gate drivers without overdrive risk

Pinout & Package

IPP60R099P6XKSA1 uses the standard TO-220 package with isolated tab (Drain-connected), rated for 60 Ncm mounting torque using M3 screws. Thermal resistance is optimized for vertical heatsink mounting with direct tab contact.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input requiring <1 Ω series gate resistor to damp ringing in high-dv/dt environments
Pin 2 (Drain)	Main current path anode	Internally connected to metal tab-must be electrically isolated from heatsink unless system ground reference permits
Pin 3 (Source)	Reference node / return path	Serves as local ground for gate driver; layout must minimize inductance to preserve switching speed and reduce overshoot

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with R_DS(on) 30% lower than planar MOSFETs of same die size, reducing conduction loss in high-power density designs
100 V/ns dv/dt ruggedness	Prevents false turn-on in high-side configurations without external snubbers, simplifying gate drive design in half-bridge PFC
300 A/µs body diode di/dt rating	Supports fast zero-voltage switching transitions in LLC resonant converters without reverse recovery failure
JEDEC industrial qualification	Validated per J-STD-20 and JESD22 for 150 °C continuous operation-suitable for uncooled industrial motor drives and solar inverters

Applications

Server Power Supply

Industrial UPS Inverter

Use Scenario: Primary-side switch in 3.3 kW active-clamp forward converter for rack-mounted servers.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 100–200 kHz with 50% duty cycle and 400 V DC bus.

Use Value: 99 mΩ R_DS(on) and 8.8 µJ E_oss reduce total losses by 12% versus prior-generation CoolMOS™ C3, enabling >96% efficiency at full load.

Use Scenario: Output H-bridge switch in 5 kVA online UPS delivering clean 230 VAC sine wave under battery backup.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT-assisted topology handling 109 A pulsed current during overload events.

Use Value: 100 V/ns dv/dt rating eliminates need for external gate clamping diodes, reducing BOM count and layout complexity.

PFC Stage (PC Silverbox)

Telecom Rectifier

Use Scenario: Boost switch in 80 PLUS Titanium-certified desktop PC power supply with 380 V DC link.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch with variable frequency up to 250 kHz and peak current of 32.9 A.

Use Value: 70 nC Q_g and low Q_gd/Q_gs ratio ensure stable zero-current switching across universal AC input range (90–264 VAC).

Use Scenario: Primary switch in 3 kW telecom rectifier converting -48 VDC battery backup to 380 VDC intermediate bus.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in phase-shifted full-bridge topology operating at 100 kHz with 600 V blocking requirement.

Use Value: 0.45 °C/W R_thJC enables 278 W dissipation with minimal heatsink volume-critical for space-constrained 19-inch rack modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R170P6	R_DS(on) = 170 mΩ, Q_g = 45 nC, E_oss = 5.2 µJ - higher conduction loss but faster switching	Better suited for >300 kHz resonant topologies where switching loss dominates	Select when optimizing for light-load efficiency in LLC converters rather than full-load conduction loss
IPW60R099P6	Same die, TO-247 package - R_thJC = 0.45 °C/W, P_tot = 278 W, but larger footprint and higher parasitic inductance	Preferred in high-power (>5 kW) industrial SMPS where thermal headroom outweighs layout constraints	Choose for designs requiring maximum thermal margin and compatibility with legacy TO-247 heatsinks

Compared with IPP60R170P6, IPP60R099P6XKSA1 trades higher gate charge for lower R_DS(on), favoring high-current, medium-frequency PFC; versus IPW60R099P6, it offers identical electrical performance in a smaller TO-220 form factor-ideal for space-constrained server power modules.

Availability

IPP60R099P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS inverters, telecom rectifiers, and PC Silverbox PFC stages requiring stable component supply and long-term industrial-grade availability.

Supply support for IPP60R099P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ P6 product line targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems-designed to replace older superjunction generations while maintaining pin compatibility and easing design migration.

FAQ

What is the maximum recommended gate resistor value for IPP60R099P6XKSA1 in a 150 kHz hard-switched PFC?

A 1.7 Ω gate resistor is validated in the datasheet for 150 kHz operation with 13 V drive, yielding 20 ns turn-on delay and 10 ns rise time. Increasing beyond 2.2 Ω risks excessive switching loss and thermal stress due to extended Miller plateau duration-especially at 150 °C junction temperature.

Does IPP60R099P6XKSA1 require external gate clamping for use in a high-side configuration?

No external gate clamping is required. The device's 100 V/ns intrinsic dv/dt ruggedness and 6.1 V gate plateau voltage provide sufficient noise immunity in high-side half-bridge PFC stages operating at 400 V DC bus, provided PCB layout minimizes source inductance and gate loop area.

Can IPP60R099P6XKSA1 be paralleled with identical units without current-balancing components?

Parallel operation requires individual gate ferrite beads or separate totem-pole drivers per unit, as stated in the datasheet. Without these, unequal dynamic current sharing occurs due to parameter spread in Q_g and threshold voltage-even within the same batch-leading to thermal runaway above 25 A per device.

What is the safe operating area (SOA) limitation at T_j = 125°C for single-pulse avalanche conditions?

At 125°C, the SOA is limited by 796 mJ single-pulse avalanche energy (E_AS) with I_D = 6.6 A and V_DD = 50 V. This corresponds to a maximum V_DS × I_D × t_p product of 39.3 mJ·s-exceeding this risks localized die failure even if average power remains within P_tot limits.

IPP60R099P6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 37.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.21mA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3330 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R099P6XKSA1 FAQ

1.How can I place an order for IPP60R099P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R099P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R099P6XKSA1 reliable?

The price and inventory of IPP60R099P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R099P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R099P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R099P6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R099P6XKSA1?

IPP60R099P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R099P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R099P6XKSA1?

For technical support, including IPP60R099P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R099P6XKSA1 requirements.

6.How does Aetrix verify that IPP60R099P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R099P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R099P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R099P6XKSA1?

All IPP60R099P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R099P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R099P6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R099P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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