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Infineon Technologies IPP60R125P6XKSA1

Part No.:
IPP60R125P6XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP60R125P6XKSA1.pdf
Description:
MOSFET N-CH 600V 30A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,229

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Product details

Overview

IPP60R125P6XKSA1 from Infineon Technologies is a 600 V, 125 mΩ superjunction N-channel MOSFET in TO-220 package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 30 A continuous drain current at 25°C, 87 A pulsed current, and features ultra-low gate charge (56 nC) and output energy (7.2 µJ @ 400 V), enabling compact, cooler-running server power supplies and telecom rectifiers.

For engineers reviewing the IPP60R125P6XKSA1 datasheet, IPP60R125P6XKSA1 pinout, IPP60R125P6XKSA1 application, or IPP60R125P6XKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (300 A/µs), and thermal resistance (0.57 °C/W junction-to-case).

Technical Context

This CoolMOS™ P6 device implements a charge-balanced superjunction structure that reduces both conduction and switching losses simultaneously. Its low FOM (RDS(on) × Qg = 7.0 mΩ·nC typ.) and Eoss enable high-frequency operation without sacrificing robustness.

The MOSFET supports fast switching with 14 ns turn-on delay and 5 ns fall time under 400 V/14.5 A conditions, while maintaining high commutation ruggedness (300 A/µs di/dt) and 100 V/ns dv/dt immunity-critical for reliable operation in resonant LLC and asymmetric half-bridge topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max600 V - rated for primary-side switching in universal-input offline SMPS up to 400 V DC bus
RDS(on) max125 mΩ @ Tj = 25°C - enables low conduction loss in 30 A continuous PFC boost stages
Qg typ56 nC - reduces gate drive power and simplifies driver selection for 100–300 kHz operation
Eoss @ 400 V7.2 µJ - lowers turn-off loss and improves efficiency in hard-switched converters
dv/dt ruggedness100 V/ns - ensures noise immunity and prevents spurious turn-on in high-dV/dt environments
Body diode di/dt300 A/µs - supports reliable zero-voltage switching (ZVS) transitions in resonant topologies
Tj max150 °C - qualified for industrial-grade operation with extended thermal margin

Pinout & Package

IPP60R125P6XKSA1 is housed in a standard TO-220 package with isolated tab (drain-connected). The package provides mechanical robustness and thermal performance suitable for through-hole mounting on PCBs with heatsinking.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives voltage-controlled signal to modulate channel conductivity; requires <20 V absolute max rating
Pin 2 (Drain) / TabHigh-voltage power terminalElectrically connected to metal tab; must be insulated from heatsink unless referenced to same potential
Pin 3 (Source)Reference and return pathServes as common reference for gate drive and current sensing; connects to power ground or source node

Key Features

FeatureDesign Value
Superjunction architectureEnables simultaneous reduction of RDS(on) and Coss, improving figure-of-merit by >30% vs. prior CoolMOS™ generations
High dv/dt ruggedness100 V/ns rating eliminates need for external snubbers in noisy high-side switch configurations
Low Eoss and Qg7.2 µJ and 56 nC values allow efficient 200–300 kHz operation in PFC and LLC designs
Industrial qualificationComplies with JEDEC J-STD-20 and JESD22 standards for temperature cycling, humidity, and solderability

Applications

Server Power SupplyTelecom Rectifier

Use Scenario: High-density 1U/2U AC-DC front-end with active PFC and LLC resonant conversion.

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) PFC boost stage and LLC half-bridge power stage.

Use Value: 125 mΩ RDS(on) and 7.2 µJ Eoss reduce total losses by ~12% versus previous-gen 600 V MOSFETs, enabling 96%+ efficiency at full load.

Use Scenario: 48 V distributed power system rectifier with universal input (90–264 VAC) and hold-up time compliance.

IC Role / Device Role / Timing Role: High-voltage switch in hard-switched forward or phase-shifted full-bridge topology.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during line transients, improving system reliability in harsh telecom environments.

LCD TV Power BoardUPS Inverter Stage

Use Scenario: Slim-form-factor backlight and main power supply for 4K LCD panels with dynamic dimming.

IC Role / Device Role / Timing Role: Switching element in quasi-resonant flyback and PFC circuits operating at variable frequency up to 120 kHz.

Use Value: Low Qg (56 nC) allows direct drive from low-power controllers, eliminating external gate drivers and reducing BOM count.

Use Scenario: Online double-conversion UPS with bidirectional DC-AC inverter and battery charging circuitry.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET bridge driving motor/generator loads.

Use Value: 300 A/µs body diode di/dt rating supports clean commutation during regenerative braking and grid-synchronization events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW60R125P6Same die, TO-247 package; lower RthJC (0.45 °C/W) and higher Ptot (272 W)Better suited for high-power (>300 W), forced-air-cooled systems where thermal headroom is criticalSelect when board space permits larger package and thermal design targets <85°C case temperature
IPA60R125P6Same die, FullPAK TO-220FP package; integrated isolation; RthJC = 3.65 °C/W; Ptot = 34 WDesigned for compact, low-profile designs with reinforced insulation (2500 Vrms) and wave-solder compatibilitySelect when safety isolation, automated assembly, or height constraints (<10 mm) dominate over thermal performance

Compared with IPW60R125P6 and IPA60R125P6, IPP60R125P6XKSA1 offers the optimal balance of thermal performance (0.57 °C/W), cost, and footprint for mid-power (100–300 W) industrial and consumer power supplies requiring manual or selective soldering.

Availability

IPP60R125P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV power boards requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPP60R125P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ P6 product line was engineered to deliver best-in-class efficiency and ruggedness for high-frequency, high-voltage switching in industrial and computing power supplies-replacing older SJ-MOSFET generations with improved FOM and ease of use.

FAQ

What is the maximum recommended gate resistor value for IPP60R125P6XKSA1 in a 200 kHz PFC application?

A 10 Ω gate resistor is recommended for stable switching at 200 kHz with minimal overshoot and adequate dv/dt immunity. This value balances switching speed (14 ns td(on), 5 ns tf) against EMI and gate oscillation risk, as validated in Infineon's P6 application notes for boost PFC stages.

Does IPP60R125P6XKSA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +15 V gate drive and does not require negative turn-off bias. Its 4.0 V typical VGS(th) and 20 V absolute maximum VGS rating support standard single-supply gate drivers like the 1EDN7512B or IRS21844.

Can IPP60R125P6XKSA1 be paralleled with identical units in a high-current PFC stage?

Yes, but gate ferrite beads (100–330 Ω @ 100 MHz) are required on each gate to suppress oscillation and ensure current sharing. Parallel operation is validated in Infineon's AN2015-05 for P6 devices, with derating to 80% of total rated current per unit.

What is the safe operating area (SOA) limitation at Tc = 100°C?

At Tc = 100°C, the continuous drain current is limited to 19.0 A per datasheet Table 2. The SOA is bounded by RDS(on) heating and second breakdown; pulse operation up to 87 A is permitted only for tp ≤ 10 µs with duty cycle ≤ 1% to avoid thermal runaway.

IPP60R125P6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P6
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2660 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
219W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP60R125P6XKSA1 FAQ

1.How can I place an order for IPP60R125P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R125P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R125P6XKSA1 reliable?

The price and inventory of IPP60R125P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R125P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R125P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R125P6XKSA1 transactions.

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4.How is shipping managed for IPP60R125P6XKSA1?

IPP60R125P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R125P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R125P6XKSA1?

For technical support, including IPP60R125P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R125P6XKSA1 requirements.

6.How does Aetrix verify that IPP60R125P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R125P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R125P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R125P6XKSA1?

All IPP60R125P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R125P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R125P6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R125P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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