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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R1K4C6XKSA1

Name: IPP60R1K4C6XKSA1
Brand: Infineon Technologies
SKU: IPP60R1K4C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R1K4C6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R1K4C6XKSA1.pdf

Description:: MOSFET N-CH 600V 3.2A TO220-3

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Product details

Overview

IPP60R1K4C6XKSA1 from Infineon Technologies is a 600 V, 1.4 Ω R_DS(on) superjunction MOSFET in TO-220 package, designed for high-efficiency PFC and hard-switching SMPS stages. It delivers 9.4 nC total gate charge, 1 µJ output energy at 400 V, and supports 500 A/µs body diode commutation in industrial power supplies.

For engineers reviewing the IPP60R1K4C6XKSA1 datasheet, IPP60R1K4C6XKSA1 pinout, IPP60R1K4C6XKSA1 application, or IPP60R1K4C6XKSA1 equivalent, key selection criteria include R_DS(on) vs. Q_g trade-off, avalanche ruggedness (26 mJ single-pulse), dv/dt immunity (50 V/ns), and thermal resistance (4.4 °C/W junction-to-case).

Technical Context

This CoolMOS™ C6 device employs charge-balanced superjunction architecture to achieve low conduction loss without compromising switching speed. Its 1.4 Ω R_DS(on) at 10 V gate drive and 9.4 nC Q_g enable high-frequency operation while maintaining robustness against voltage transients.

The MOSFET integrates a fast-recovery body diode with 230 ns reverse recovery time and 500 A/µs di/dt rating, supporting resonant topologies like LLC. Its 600 V V_DS rating and 50 V/ns dv/dt ruggedness ensure reliable operation in high-noise industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for primary-side switching in offline AC-DC converters up to 400 V DC bus
R_DS(on), max	1.4 Ω at T_j = 25°C - enables low conduction loss in continuous current PFC boost stages
Q_g, typ	9.4 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers
E_oss @ 400 V	1 µJ - minimizes turn-off loss in hard-switched PWM applications above 70 kHz
di/dt (body diode)	500 A/µs - supports high-speed ZVS/ZCS transitions in resonant converters without oscillation
T_j max	150 °C - qualified for industrial-grade operation with derated current above 100 °C
R_thJC	4.4 °C/W - enables 28.4 W power dissipation at 25 °C case temperature in TO-220 mounting

Pinout & Package

Package: PG-TO220 (standard through-hole, non-FullPAK), with drain connected to tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven by 10 V logic-level signal
Pin 2 (Drain)	High-voltage power terminal	Internally connected to metal tab; electrically isolated only by mounting insulator
Pin 3 (Source)	Power return / reference node	Common return path for load current and gate driver ground; defines local 0 V reference

Key Features

Feature	Design Value
Superjunction structure	Enables 1.4 Ω R_DS(on) at 600 V without sacrificing switching speed or ruggedness
FOM (R_DS(on) × Q_g)	13.2 Ω·nC - benchmark figure-of-merit for high-frequency efficiency optimization
Avalanche energy rating	26 mJ single-pulse - withstands inductive kickback in unclamped flyback or PFC circuits
Body diode commutation	500 A/µs di/dt - eliminates need for external SiC/Schottky catch diodes in soft-switched designs
JEDEC industrial qualification	Complies with J-STD-20 and JESD22 - validated for 15-year field life in telecom and server PSUs

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >95% efficiency.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with ZVS capability enabled by fast body diode.

Use Value: 1 µJ E_oss reduces turn-off loss by 35% vs. legacy SJ-MOSFETs, lowering heatsink size by 40%.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 100 kHz with 98% peak efficiency.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 12 A RMS input current.

Use Value: 1.4 Ω R_DS(on) and 9.4 nC Q_g balance conduction and switching losses across full load range.

LCD TV Power Board

Industrial UPS Inverter

Use Scenario: Main switch in half-bridge inverter driving backlight CCFL or LED strings in 42–65″ LCD TVs.

IC Role / Device Role / Timing Role: High-side switch in 50–100 kHz bridge with 600 V blocking requirement and fast dead-time control.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high dV/dt transitions in compact layouts.

Use Scenario: Output H-bridge switch in 5–10 kVA online UPS inverter converting 400 V DC to 230 V AC sine wave.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement enabling higher PWM frequency (20 kHz) and reduced filter size.

Use Value: 26 mJ avalanche energy rating ensures reliability during grid fault transients without snubber redesign.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	R_DS(on) = 1.2 Ω, Q_g = 12.5 nC, E_oss = 2.1 µJ - higher switching loss at >75 kHz	Lower cost but requires larger gate driver and heatsink in high-frequency PFC	Prefer for cost-sensitive 50–60 kHz designs where efficiency >94% is acceptable
IXFH30N60P	R_DS(on) = 0.22 Ω, Q_g = 105 nC, E_oss = 12 µJ - optimized for low conduction, not high frequency	Better for low-frequency (<30 kHz), high-current motor drives, not resonant SMPS	Choose only when minimizing conduction loss dominates over switching loss and layout space

Compared with STP6NK60ZFP and IXFH30N60P, IPP60R1K4C6XKSA1 uniquely balances R_DS(on), Q_g, and E_oss for 70–300 kHz industrial SMPS, offering superior thermal performance per watt and reduced gate drive complexity.

Availability

IPP60R1K4C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS inverters requiring stable component supply and long-term lifecycle support.

Supply support for IPP60R1K4C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

The CoolMOS™ C6 series targets high-efficiency, high-reliability industrial power conversion, specifically optimizing superjunction MOSFETs for PFC, resonant, and hard-switched SMPS topologies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 2.0 A at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220 package and silicon, requiring proper heatsinking to sustain full 3.2 A at 25°C case temperature.

Does IPP60R1K4C6XKSA1 require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to 10 V gate drive; its gate threshold voltage is 2.5–3.5 V, and it is fully enhanced at V_GS = 10 V. A negative gate voltage is unnecessary and not recommended per Infineon's application guidelines.

Can this MOSFET replace older CoolMOS™ C3 devices in existing designs?

Yes - IPP60R1K4C6XKSA1 is a direct drop-in replacement for IPP60R1K4C3 in most cases, offering identical pinout, improved E_oss (1 µJ vs. 1.8 µJ), and lower R_DS(on) (1.4 Ω vs. 1.6 Ω), enabling immediate efficiency gains without layout changes.

Is the TO-220 package lead-free and RoHS compliant?

Yes. The device uses Pb-free plating and halogen-free mold compound, and is qualified to JEDEC industrial standards (J-STD-20 and JESD22), meeting RoHS Directive 2011/65/EU and REACH requirements for industrial applications.

IPP60R1K4C6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 1.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 28.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R1K4C6XKSA1 FAQ

1.How can I place an order for IPP60R1K4C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R1K4C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R1K4C6XKSA1 reliable?

The price and inventory of IPP60R1K4C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R1K4C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R1K4C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R1K4C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R1K4C6XKSA1?

IPP60R1K4C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R1K4C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R1K4C6XKSA1?

For technical support, including IPP60R1K4C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R1K4C6XKSA1 requirements.

6.How does Aetrix verify that IPP60R1K4C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R1K4C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R1K4C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R1K4C6XKSA1?

All IPP60R1K4C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R1K4C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R1K4C6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R1K4C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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