Infineon Technologies IPP60R230P6XKSA1

Overview

IPP60R230P6XKSA1 from Infineon Technologies is a 600 V, 230 mΩ superjunction N-channel MOSFET in TO-220 package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 16.8 A continuous drain current at 25°C, 31 nC total gate charge, and 4.2 µJ output energy at 400 V - enabling compact, cooler-running server power supplies and industrial UPS systems.

For engineers reviewing the IPP60R230P6XKSA1 datasheet, IPP60R230P6XKSA1 pinout, IPP60R230P6XKSA1 application, or IPP60R230P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (500 A/µs), and thermal resistance (0.99 °C/W junction-to-case).

Technical Context

This CoolMOS™ P6 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping profile to simultaneously reduce conduction loss (R_DS(on) = 230 mΩ max at 150°C) and switching loss (E_oss = 4.2 µJ @ 400 V). Its gate plateau voltage of 6.1 V ensures robust turn-on margin under noisy gate drive conditions.

The MOSFET supports high-speed switching with 12 ns turn-on delay and 6 ns fall time at 400 V/8 A, while maintaining 150°C maximum junction temperature and 352 mJ single-pulse avalanche energy. Its body diode exhibits 282 ns reverse recovery time and 3.4 µC Q_rr, suitable for discontinuous conduction mode (DCM) PFC operation.

Key Specifications

Pinout & Package

IPP60R230P6XKSA1 is housed in a standard TO-220 package with isolated tab (drain-connected), featuring three leads and mechanical mounting hole compatibility with industry-standard heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R230P6, IPP60R230P6XKSA1 trades slightly higher thermal resistance (same R_thJC but smaller TO-220 footprint) for lower assembly cost and board space; versus IPP60R230C6, it prioritizes ruggedness and reliability over marginal R_DS(on) gain in harsh industrial environments.

Availability

IPP60R230P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-lifecycle support, and JEDEC-qualified industrial-grade reliability.

Supply support for IPP60R230P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the CoolMOS™ P6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in industrial, computing, and telecom infrastructure where thermal robustness and switching consistency are critical.

FAQ

What is the maximum continuous drain current for IPP60R230P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 10.7 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This value accounts for thermal derating due to junction-to-case thermal resistance (0.99 °C/W) and maximum allowable junction temperature (150°C), ensuring safe operation under sustained load conditions.

Does IPP60R230P6XKSA1 require a gate resistor for reliable operation in a half-bridge configuration?

Yes - a gate resistor (typically 3.4 Ω, per datasheet test condition) is required to control dv/dt during switching and prevent oscillation. The device's 4.4 Ω internal gate resistance alone is insufficient to dampen ringing; external series resistance ensures stable turn-on/turn-off timing and mitigates shoot-through risk in bridge topologies.

Can IPP60R230P6XKSA1 replace older CoolMOS™ P5 devices in existing PFC designs?

Yes - IPP60R230P6XKSA1 is a direct drop-in replacement for IPP60R230P5 in most PFC circuits, offering identical pinout, voltage rating, and R_DS(on), plus improved E_oss (4.2 µJ vs. 5.1 µJ) and dv/dt ruggedness (100 V/ns vs. 85 V/ns), resulting in measurable efficiency gains without layout changes.

Is the TO-220 tab of IPP60R230P6XKSA1 electrically isolated from the PCB mount surface?

No - the metal tab is internally connected to the drain terminal and is not electrically isolated. When mounted to a heatsink, the tab must be insulated using a mica or polymer pad unless the heatsink is floating or referenced to high-voltage rail; creepage and clearance distances must comply with IEC 62368-1 for safety-critical applications.