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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R280P6XKSA1

Name: IPP60R280P6XKSA1
Brand: Infineon Technologies
SKU: IPP60R280P6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R280P6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R280P6XKSA1.pdf

Description:: MOSFET N-CH 600V 13.8A TO220-3

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Product details

Overview

IPP60R280P6XKSA1 from Infineon Technologies is a 600 V, 280 mΩ superjunction N-channel power MOSFET in TO-220 package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 13.8 A continuous drain current at 25°C, 39 A pulsed current, and features ultra-low gate charge (25.5 nC) and output switching energy (3.5 µJ @ 400 V), enabling compact, cooler-running SMPS designs in server PSUs and industrial adapters.

For engineers reviewing the IPP60R280P6XKSA1 datasheet, IPP60R280P6XKSA1 pinout, IPP60R280P6XKSA1 application, or IPP60R280P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (500 A/µs), and thermal resistance (1.2 °C/W junction-to-case) for reliable high-power density implementation.

Technical Context

This CoolMOS™ P6 device employs superjunction architecture to achieve simultaneous low conduction loss (R_DS(on) = 280 mΩ max at T_j = 150°C) and fast switching (t_d(off) = 36 ns, Q_g = 25.5 nC). Its gate threshold voltage (4.0 V typ) and plateau voltage (6.1 V) support robust 10–13 V gate drive without overdrive risk.

The integrated body diode exhibits 263 ns reverse recovery time and 2.8 µC Q_rr, with validated 500 A/µs di/dt capability-critical for ZVS/ZCS resonant topologies. Thermal design is anchored by 1.2 °C/W R_thJC, enabling high-power operation with standard heatsinking on TO-220 mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus applications with 50% safety margin against transients in telecom/server PFC stages.
R_DS(on)	280 mΩ max @ T_j = 150°C - Enables <1.5 W conduction loss at 13.8 A, reducing heatsink size in 300–500 W SMPS.
Q_g	25.5 nC typ - Low gate drive power requirement allows use of cost-effective 1-A gate drivers in high-frequency (>100 kHz) converters.
E_oss	3.5 µJ @ 400 V - Reduces turn-off loss by >40% vs. prior-generation SJ-MOSFETs, improving efficiency in hard-switched LLC/PWM.
dv/dt ruggedness	100 V/ns - Ensures reliable operation under fast voltage transients in high-dV/dt environments like motor drives and UPS inverters.
Body diode dI/dt	500 A/µs - Supports high-speed commutation in bridge-leg configurations without oscillation or shoot-through risk.
R_thJC	1.2 °C/W - Allows 104 W power dissipation at T_C = 25°C, simplifying thermal interface design for TO-220-based PCB layouts.

Pinout & Package

IPP60R280P6XKSA1 is housed in a standard TO-220 package with isolated tab (drain-connected), suitable for through-hole mounting and direct heatsink attachment. The plastic body meets RoHS and halogen-free requirements per JEDEC J-STD-20.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires 10–13 V drive for full enhancement; RG = 5.5 Ω internal gate resistance limits ringing.
Pin 2 / Tab	Drain	Main high-voltage power terminal; electrically connected to metal tab for low-inductance heatsink coupling and thermal path.
Pin 3	Source	Power return and gate reference node; must be routed with low inductance to minimize switching overshoot and EMI.

Key Features

Feature	Design Value
Superjunction structure	Enables 600 V rating with R_DS(on) × Q_g figure-of-merit < 7.2 Ω·nC-reducing total switching + conduction loss by ~22% vs. P5 series.
Enhanced dv/dt ruggedness	100 V/ns rating eliminates need for external snubbers in 400 V bus applications, lowering BOM count and layout complexity.
Industrial-grade qualification	Qualified per JEDEC JESD22-A108 (temperature cycling) and J-STD-20 (reflow), supporting 15-year field life in industrial power supplies.
Optimized body diode	263 ns t_rr and 500 A/µs dI/dt enable zero-voltage switching in asymmetric half-bridge PFC without external diode replacement.
Pb-free & halogen-free	Meets RoHS Directive 2011/65/EU and IEC 61249-2-21, enabling compliance in EU, China, and Korea environmental regulations.

Applications

Server Power Supply

Industrial AC-DC Adapter

Use Scenario: Active PFC front-end in 80 PLUS Titanium 1.5 kW server PSU operating at 100–125 kHz.

IC Role / Device Role / Timing Role: High-side switch in boost converter topology handling 12 A RMS input current at 230 VAC.

Use Value: 280 mΩ R_DS(on) and 3.5 µJ E_oss reduce conduction + switching losses by 1.8 W vs. legacy 650 V MOSFETs, enabling fanless operation below 65°C ambient.

Use Scenario: Primary-side switch in 300 W industrial adapter with universal input (85–264 VAC) and 400 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in flyback or LLC resonant converter running at 65–150 kHz.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during line surges; 1.2 °C/W R_thJC allows 104 W dissipation with minimal heatsink volume.

Telecom Rectifier Module

UPS Inverter Stage

Use Scenario: Output rectification and isolation in 3 kW telecom rectifier with distributed power architecture.

IC Role / Device Role / Timing Role: Synchronous rectifier driver in secondary-side synchronous buck stage, controlled via dedicated gate driver IC.

Use Value: Body diode's 500 A/µs dI/dt and 2.8 µC Q_rr ensure clean commutation during phase-shifted transitions, minimizing cross-conduction loss.

Use Scenario: Half-bridge leg in online double-conversion UPS inverter delivering 2 kVA at 50/60 Hz with PWM modulation.

IC Role / Device Role / Timing Role: High-frequency switching element in H-bridge output stage, switching at 16–20 kHz to synthesize sine wave.

Use Value: 285 mJ single-pulse avalanche energy rating provides inherent short-circuit robustness during load dump events without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R280P6	Same die, TO-247 package; lower R_thJC (1.2 °C/W) but larger footprint and higher parasitic inductance.	Better thermal performance in high-power (>500 W) open-frame PSUs; less suitable for space-constrained board layouts.	Select when junction temperature margin is critical and board area permits TO-247 mounting.
IPP60R380P6	Higher R_DS(on) (380 mΩ), lower Q_g (18.5 nC); reduced conduction loss penalty at light load due to lower C_iss.	Preferred for variable-load applications (e.g., LED drivers) where light-load efficiency dominates system spec.	Choose when average load is <40% rated power and thermal headroom exceeds 25°C.

Compared with IPW60R280P6, IPP60R280P6 trades package size and mounting flexibility for identical electrical performance; versus IPP60R380P6, it prioritizes full-load efficiency and thermal headroom at the cost of slightly higher gate drive demand.

Availability

IPP60R280P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IPP60R280P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ P6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, industrial, and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current for IPP60R280P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 8.8 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the 150°C maximum junction temperature limit.

Does IPP60R280P6XKSA1 require a gate resistor for stable switching?

Yes-a 3.4 Ω external gate resistor is used in the datasheet's switching characterization (Table 7), and application guidance recommends ferrite beads or separate totem-pole drivers when paralleling devices to suppress oscillation and ensure uniform current sharing.

Can IPP60R280P6XKSA1 replace older CoolMOS™ P5 devices in existing designs?

Yes, with minor layout review: the P6 offers lower R_DS(on), Q_g, and E_oss than P5 counterparts, but gate threshold (4.0 V typ) and plateau voltage (6.1 V) are nearly identical, ensuring compatibility with existing 12 V gate drive circuits and controller timing.

Is the TO-220 tab electrically isolated in IPP60R280P6XKSA1?

No-the metal tab is internally connected to the drain terminal, as confirmed in the "Package Outlines" section and pin assignment (Pin 2 / Tab = Drain). Electrical isolation must be implemented externally using insulating washers or shoulder washers when mounting to grounded heatsinks.

IPP60R280P6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 430µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R280P6XKSA1 FAQ

1.How can I place an order for IPP60R280P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R280P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R280P6XKSA1 reliable?

The price and inventory of IPP60R280P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R280P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R280P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R280P6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R280P6XKSA1?

IPP60R280P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R280P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R280P6XKSA1?

For technical support, including IPP60R280P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R280P6XKSA1 requirements.

6.How does Aetrix verify that IPP60R280P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R280P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R280P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R280P6XKSA1?

All IPP60R280P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R280P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R280P6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R280P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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