Infineon Technologies IPP60R330P6XKSA1
- Part No.:
- IPP60R330P6XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP60R330P6XKSA1.pdf
- Description:
- MOSFET N-CH 600V 12A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,380
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Product details
Overview
IPP60R330P6XKSA1 from Infineon Technologies is a 600 V, 12 A (TC=25°C) superjunction N-channel power MOSFET in TO-220 package, featuring 330 mΩ max RDS(on), 22 nC typical gate charge, and 3 µJ Eoss at 400 V. It delivers high dv/dt ruggedness (100 V/ns), 500 A/µs body diode commutation speed, and is optimized for PFC and hard-switching PWM stages in server PSUs and telecom rectifiers.
For engineers reviewing the IPP60R330P6XKSA1 datasheet, IPP60R330P6XKSA1 pinout, IPP60R330P6XKSA1 application, or IPP60R330P6XKSA1 equivalent, key selection criteria include RDS(on)/Qg FOM, avalanche energy rating (247 mJ), thermal resistance (1.35 °C/W j-c), gate drive simplicity, and industrial-grade JEDEC qualification.
Technical Context
This CoolMOS™ P6 device implements a charge-compensated superjunction structure enabling simultaneous low conduction loss (330 mΩ @ 10 V, 4.5 A, 25°C) and fast switching (td(on)=12 ns, tf=7 ns @ 400 V). Its 6.1 V gate plateau voltage and 6.7 Ω internal gate resistance simplify gate driver design without external damping.
The MOSFET supports robust unclamped inductive switching with 247 mJ single-pulse avalanche energy and 150°C maximum junction temperature. Its body diode exhibits 257 ns reverse recovery time and 18 A peak reverse recovery current under 400 V, 5.6 A, 100 A/µs conditions - critical for ZVS/ZCS resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus designs with 50% safety margin for transient overvoltage |
| RDS(on) max | 330 mΩ @ 10 V, 4.5 A, 25°C - enables <1.5 W conduction loss at 12 A in PFC boost stage |
| Qg typ | 22 nC - reduces gate drive power and allows use of low-cost 1-A drivers in 100 kHz designs |
| Eoss @ 400 V | 3 µJ - lowers turn-on loss in hard-switched converters operating above 65 kHz |
| dV/dt ruggedness | 100 V/ns - prevents false turn-on in high-noise half-bridge configurations |
| Body diode dI/dt | 500 A/µs - sustains fast commutation in LLC resonant converters without snubbing |
| RthJC | 1.35 °C/W - permits 93 W continuous dissipation at 25°C case temperature |
Pinout & Package
IPP60R330P6XKSA1 uses a standard TO-220 package with isolated tab (drain-connected), 3-pin configuration, and JEDEC MS-001AC outline. Mounting torque: 60 N·cm (M3/M3.5 screws).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires 10 V min for full enhancement; 6.7 Ω internal resistance limits ringing |
| Pin 2 / Tab | Drain | Main high-side power path; tab is electrically connected to drain and serves as primary thermal interface |
| Pin 3 | Source | Reference node for gate drive; connects to PCB ground plane for low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 330 mΩ RDS(on) at 600 V while maintaining <100 ns switching times |
| Low Eoss (3 µJ @ 400 V) | Reduces turn-on loss by ~40% vs. prior P5 generation in 100 kHz hard-switched PFC |
| 150°C rated junction temperature | Supports compact heatsink design in sealed server power supplies with ambient up to 70°C |
| JEDEC industrial qualification | Validated per J-STD-20 (reflow) and JESD22 (HTOL, TC, HAST) for 10+ year field life |
| High dv/dt immunity (100 V/ns) | Eliminates need for gate resistors >10 Ω in bridge-leg layouts with shared source routing |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
Use Scenario: Boost PFC front-end in 1–3 kW redundant AC/DC units operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost converter; handles 12 A RMS input current. Use Value: 330 mΩ RDS(on) and 22 nC Qg enable >96% efficiency at full load while reducing heatsink volume by 30% vs. P5 devices. | Use Scenario: Primary-side switch in 48 V output telecom rectifiers with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Hard-switched PWM transistor in forward or half-bridge topology; operates at 100 kHz with 400 V DC link. Use Value: 247 mJ avalanche energy rating ensures reliable operation during line surges without external clamping. |
| LCD TV Backlight Inverter | Industrial UPS Inverter Stage |
Use Scenario: Resonant half-bridge driver for CCFL or LED backlight inverters in 32–65 inch displays. IC Role / Device Role / Timing Role: High-side switch in ZVS-configured LLC resonant converter; commutates at 200–500 kHz. Use Value: 500 A/µs body diode dI/dt and 257 ns trr support clean zero-voltage switching without added snubbers. | Use Scenario: Output H-bridge switch in 1–5 kVA online UPS systems with battery backup and pure sine wave output. IC Role / Device Role / Timing Role: Low-loss switching element in 16 kHz SPWM inverter leg; handles bidirectional current during regeneration. Use Value: 10.4 A continuous diode current rating and 150°C Tj allow derating-free operation in forced-air-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW60R330P6 | TO-247 package; lower RthJC (1.35 °C/W same); higher Ptot (93 W); identical electrical specs | Better thermal performance in high-power (>2 kW) open-frame PSUs with active cooling | Select when board space allows TO-247 and thermal margin is constrained |
| IPA60R330P6 | FullPAK (TO-220FP) package; higher RthJC (3.95 °C/W); lower Ptot (32 W); same die | Suitable for space-constrained, lower-power (<800 W) adapters with minimal heatsinking | Select when footprint and height are critical, and power dissipation ≤30 W |
Compared with IPW60R330P6 and IPA60R330P6, IPP60R330P6 offers optimal balance of thermal performance (1.35 °C/W), mechanical compatibility (standard TO-220 mounting), and cost for mid-power industrial PFC and telecom rectifier designs.
Availability
IPP60R330P6XKSA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, LCD TV backlight inverters, and industrial UPS inverter stages requiring stable component supply and long-term industrial qualification.
Supply support for IPP60R330P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.
The CoolMOS™ P6 product line was engineered specifically for high-efficiency, high-reliability AC/DC conversion in industrial and telecom power supplies - emphasizing low Eoss, high dv/dt immunity, and JEDEC industrial qualification.
FAQ
What is the maximum continuous drain current for IPP60R330P6XKSA1 at 100°C case temperature?
The maximum continuous drain current is 7.6 A at TC = 100°C, as specified in Table 2 of the datasheet. This rating is thermally limited by junction temperature (Tj ≤ 150°C) and assumes proper heatsinking with RthJC = 1.35 °C/W. At TC = 25°C, the rating rises to 12.0 A.
Does IPP60R330P6XKSA1 require a gate resistor for stability in hard-switching applications?
Yes - although its internal gate resistance is 6.7 Ω, a series gate resistor (typically 5–15 Ω) is recommended to dampen ringing and control di/dt during turn-on. The datasheet notes that ferrite beads or separate totem-pole drivers are advised for paralleling, confirming external gate control is necessary for robust operation.
Is IPP60R330P6XKSA1 suitable for resonant LLC topologies?
Yes - its 500 A/µs body diode dI/dt rating, 257 ns reverse recovery time, and low Qrr (3 µC) make it well-suited for ZVS-enabled LLC converters. The low Eoss (3 µJ) further minimizes turn-on loss during soft-switching transitions, especially at 200–500 kHz operating frequencies.
What is the insulation withstand voltage rating for IPP60R330P6XKSA1?
IPP60R330P6XKSA1 is packaged in standard TO-220 (not TO-220FP), so it does not carry an isolation voltage rating like the FullPAK variant (2500 Vrms). Its TO-220 construction provides basic creepage/clearance per IEC 60747-9 but no certified reinforced insulation - external isolation must be implemented at system level.
IPP60R330P6XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P6
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 330mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1010 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 93W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP60R330P6XKSA1 FAQ
1.How can I place an order for IPP60R330P6XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP60R330P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP60R330P6XKSA1 reliable?
The price and inventory of IPP60R330P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R330P6XKSA1 is usually 5 days.
3.What payment methods are accepted for IPP60R330P6XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R330P6XKSA1 transactions.
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4.How is shipping managed for IPP60R330P6XKSA1?
IPP60R330P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP60R330P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP60R330P6XKSA1?
For technical support, including IPP60R330P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R330P6XKSA1 requirements.
6.How does Aetrix verify that IPP60R330P6XKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP60R330P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R330P6XKSA1 meets industry standards.
7.What is the process for return or replacement of IPP60R330P6XKSA1?
All IPP60R330P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R330P6XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP60R330P6XKSA1 part is unused and in its original packaging.
Return procedure for IPP60R330P6XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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