My Inquiry
My Account
Infineon Technologies IPP60R360P7XKSA1
- Part No.:
- IPP60R360P7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP60R360P7XKSA1.pdf
- Description:
- MOSFET N-CH 650V 9A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,627
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPP60R360P7XKSA1 from Infineon Technologies is a 600 V, 360 mΩ superjunction N-channel power MOSFET in PG-TO220 package, designed for high-efficiency hard- and soft-switching PFC and LLC stages. It delivers 26 A pulsed drain current, 13 nC total gate charge, and 900 A/µs body diode commutation speed, enabling compact, cooler-running server PSUs and industrial adapters.
For engineers reviewing the IPP60R360P7XKSA1 datasheet, IPP60R360P7XKSA1 pinout, IPP60R360P7XKSA1 application, or IPP60R360P7XKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, ESD robustness (>2 kV HBM), low Eoss (1.6 µJ @ 400 V), and body diode ruggedness under hard commutation.
Technical Context
This CoolMOS™ P7 generation device implements superjunction architecture with optimized charge balancing for reduced conduction and switching losses. Its 5.2 V gate plateau voltage and 6.2 Ω intrinsic gate resistance support stable, low-ringing turn-on/off behavior without external gate damping in most PFC topologies.
The MOSFET features a fully qualified industrial-grade body diode with 145 ns reverse recovery time and 0.74 µC Qrr, enabling reliable operation in resonant converters where diode commutation stress is critical. Thermal resistance RthJC is 3.04 °C/W, supporting high-power density thermal design at TC = 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Rated blocking voltage for universal-input offline SMPS up to 400 V DC bus |
| RDS(on),max | 360 mΩ @ Tj = 150 °C - Enables <9 A continuous conduction at 100 °C case temperature with minimal conduction loss |
| Qg,typ | 13 nC @ VDD = 400 V - Low gate drive energy reduces driver IC loading and enables higher switching frequencies |
| Eoss | 1.6 µJ @ 400 V - Minimizes turn-off loss in ZVS/ZCS circuits like LLC resonant converters |
| diF/dt | 900 A/µs - Supports fast, unclamped inductive turn-off without diode failure in hard-commutated PFC |
| Tj,max | 150 °C - Industrial-grade junction rating allows sustained operation in enclosed, convection-cooled enclosures |
| VGS(th) | 3.5 V typ - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers |
Pinout & Package
Package: PG-TO220-3 (leadframe-based through-hole), with exposed drain tab for direct heatsink mounting. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Low-impedance input requiring ≤13 nC drive; 6.2 Ω internal RG limits ringing without external series resistor in many designs |
| Pin 2 (Drain) | High-voltage power terminal | Internally bonded to metal tab - must be electrically isolated from heatsink unless system ground-referenced |
| Pin 3 (Source) | Reference and return path | Provides Kelvin connection for gate drive return; critical for accurate VGS control in high-dv/dt environments |
Key Features
| Feature | Design Value |
|---|---|
| Hard/soft switching ruggedness | Validated 900 A/µs diF/dt and 27 mJ single-pulse avalanche energy enable reliable operation in both PFC and LLC without snubbers |
| ESD robustness | HBM >2 kV eliminates need for external ESD protection in assembly and handling |
| Low switching loss | 1.6 µJ Eoss at 400 V reduces turn-off loss by ~35% vs. prior P6 generation, enabling 100+ kHz operation in 1 kW PFC |
| RDS(on) × area efficiency | Sub-1 Ω·mm² figure of merit allows smaller die size without sacrificing conduction loss - improves power density in space-constrained adapters |
Applications
| Server Power Supply | Industrial AC-DC Adapter |
|---|---|
Use Scenario: 1–2 kW front-end PFC stage in redundant server PSUs operating at 100–240 VAC input. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost PFC, switching at 65–100 kHz. Use Value: 360 mΩ RDS(on) and low Eoss reduce conduction + switching loss by 12% vs. P6 equivalents, lowering heatsink mass by 25 g per phase. | Use Scenario: 300–600 W open-frame industrial adapter for PLC I/O modules with wide ambient range (−40 to +70 °C). IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback or asymmetric half-bridge topology. Use Value: 150 °C Tj,max and 3.04 °C/W RthJC sustain full load at 70 °C ambient without derating, eliminating forced air cooling. |
| LCD TV Backlight Inverter | Telecom Rectifier Module |
Use Scenario: Resonant half-bridge driving CCFL or LED backlight in 40–65 inch LCD TVs. IC Role / Device Role / Timing Role: High-side switch in LLC resonant converter operating at 250–500 kHz with ZVS. Use Value: 145 ns trr and 0.74 µC Qrr minimize diode recovery loss during dead-time, improving efficiency by 0.8% at full load. | Use Scenario: 3 kW telecom rectifier module with dual active-clamp forward or phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Synchronous rectification switch or primary-side PWM switch in high-reliability -48 V DC output system. Use Value: JEDEC-qualified industrial reliability and 26 A ID,pulse support peak-current overload handling during brownout recovery without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R360P6XKSA1 | Same RDS(on) but higher Eoss (2.4 µJ), 18 nC Qg, and lower diF/dt (600 A/µs) | Less suitable for high-frequency LLC due to higher switching loss and weaker body diode ruggedness | Select only if legacy P6 qualification or cost sensitivity outweighs 8–10% efficiency gain in new designs |
| STP60N3LLH6 | 650 V rating, 3.3 mΩ RDS(on) at 10 V, but 22 nC Qg and no industrial temp qualification | Not rated for >125 °C Tj; unsuitable for sealed industrial enclosures or telecom rectifiers | Consider only for consumer-grade lighting or low-cost adapters with active cooling and <85 °C ambient |
Compared with IPP60R360P6XKSA1 and STP60N3LLH6, IPP60R360P7XKSA1 offers superior efficiency in high-frequency PFC/LLC via lower Eoss and Qg, broader industrial temperature compliance, and proven body diode ruggedness-making it the preferred choice for thermally constrained, high-reliability power systems.
Availability
IPP60R360P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.
Supply support for IPP60R360P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The CoolMOS™ P7 product line targets high-efficiency, high-density offline power conversion - specifically engineered to replace older superjunction MOSFETs in PFC, resonant, and hard-switched SMPS where thermal headroom and EMI reduction are critical.
FAQ
What is the maximum recommended gate drive voltage for IPP60R360P7XKSA1?
The absolute maximum static gate-source voltage is ±20 V, and dynamic (AC) rating extends to ±30 V for f > 1 Hz. For reliable operation, gate drive should be clamped between 0 V and +12 V to avoid overstressing the oxide while ensuring full enhancement. Exceeding +13 V provides negligible RDS(on) improvement but increases gate oxide wear over lifetime.
Can IPP60R360P7XKSA1 be paralleled with identical units?
Yes, but gate drive must be individually buffered: use separate totem-pole drivers or ferrite beads (≥100 Ω impedance at 10–50 MHz) on each gate line to suppress oscillation. Matching layout symmetry, thermal coupling, and source inductance is mandatory - mismatch >5% in gate loop inductance risks current imbalance and thermal runaway above 10 A per device.
Does IPP60R360P7XKSA1 require a gate resistor, and what value is recommended?
A gate resistor is required to dampen ringing and control dV/dt. With its 6.2 Ω intrinsic RG, a 5–10 Ω external resistor is typical for 65–100 kHz PFC. For LLC >300 kHz, reduce to 2–5 Ω to maintain fast turn-on while retaining sufficient damping - verified via oscilloscope measurement of VGS overshoot (<10% of Vdrive) and VDS ringing amplitude (<15% of bus voltage).
Is the drain tab electrically isolated from the PCB mounting holes in PG-TO220 package?
No - the drain (Pin 2) is directly connected to the metal tab, which is not internally insulated. When mounted to a heatsink, the tab must be electrically isolated using mica or polymer insulator kits unless the heatsink is referenced to drain potential. PCB mounting holes must not contact the tab; clearance and creepage distances must comply with IEC 62368-1 for 600 V working voltage.
IPP60R360P7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P7
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 360mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 555 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 41W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP60R360P7XKSA1 FAQ
1.How can I place an order for IPP60R360P7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP60R360P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP60R360P7XKSA1 reliable?
The price and inventory of IPP60R360P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R360P7XKSA1 is usually 5 days.
3.What payment methods are accepted for IPP60R360P7XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R360P7XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP60R360P7XKSA1?
IPP60R360P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP60R360P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP60R360P7XKSA1?
For technical support, including IPP60R360P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R360P7XKSA1 requirements.
6.How does Aetrix verify that IPP60R360P7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP60R360P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R360P7XKSA1 meets industry standards.
7.What is the process for return or replacement of IPP60R360P7XKSA1?
All IPP60R360P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R360P7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP60R360P7XKSA1 part is unused and in its original packaging.
Return procedure for IPP60R360P7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPP60R360P7XKSA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
