Infineon Technologies IPP60R380P6XKSA1

Overview

IPP60R380P6XKSA1 from Infineon Technologies is a 600 V, 380 mΩ superjunction N-channel power MOSFET in PG-TO220-3 package, featuring 19 nC total gate charge, 29 A pulsed drain current, and integrated body diode with 500 A/µs commutation capability-designed for high-efficiency PFC and hard-switching SMPS in server power supplies.

For engineers reviewing the IPP60R380P6XKSA1 datasheet, IPP60R380P6XKSA1 pinout, IPP60R380P6XKSA1 application, or IPP60R380P6XKSA1 equivalent, key selection criteria include R_DS(on) at 150°C, E_oss @ 400 V, dv/dt ruggedness (100 V/ns), and thermal resistance (R_thJC = 1.5 °C/W) for thermal design validation in high-density AC-DC converters.

Technical Context

This CoolMOS™ P6 device implements a superjunction cell structure optimized for low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss (2.7 µJ @ 400 V), enabling high-frequency operation without sacrificing voltage robustness or switching ruggedness. Its gate plateau voltage is 6.1 V, and turn-off delay time is 33 ns under standard test conditions (V_DD = 400 V, I_D = 4.8 A, R_G = 3.4 Ω).

The internal body diode supports fast commutation (dI_F/dt up to 500 A/µs) and exhibits 232 ns reverse recovery time with 2.1 µC Q_rr at 400 V. It is fully qualified per JEDEC JESD47 for industrial temperature range (–55 °C to +150 °C) and rated for 650 V V_DS maximum at T_j,max.

Key Specifications

Pinout & Package

IPP60R380P6XKSA1 uses the PG-TO220-3 (TO-220AB) package with isolated tab. The drain connects to the metal tab for direct heatsinking; gate and source are on leads 1 and 3 respectively.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Compared with IPP60R380C6 and STP60N3LLH6, IPP60R380P6XKSA1 delivers superior high-frequency efficiency via lowest E_oss and highest dv/dt immunity, making it optimal for compact, high-power-density 100–300 kHz AC-DC converters where thermal and EMI constraints are critical.

Availability

IPP60R380P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverter stages requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IPP60R380P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication infrastructure.

The CoolMOS™ P6 series was developed to deliver best-in-class efficiency and ruggedness for high-frequency, high-voltage SMPS in datacenter, telecom, and industrial power systems-targeting 80 PLUS Titanium and similar ultra-high-efficiency standards.

FAQ

What is the maximum continuous drain current for IPP60R380P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 6.7 A at T_C = 100°C, as specified in Table 2 of the official Infineon datasheet Rev. 2.4. This rating is limited by junction temperature (T_j ≤ 150°C) and assumes proper heatsinking with R_thJC = 1.5 °C/W. Derating is linear between 25°C and 100°C.

Does IPP60R380P6XKSA1 have an isolated package, and what is its insulation rating?

No-it uses a standard PG-TO220-3 package with electrically connected drain tab. The drain (tab) is not insulated from the die; isolation must be implemented externally via insulating washer or pad. This part has no rated V_ISO; only the FullPAK variant (IPA60R380P6) specifies 2500 V_rms insulation.

Can IPP60R380P6XKSA1 be paralleled, and what layout guidance applies?

Yes, but Infineon recommends gate ferrite beads or individual totem-pole drivers per device to suppress oscillation and ensure current sharing. Layout must balance gate loop inductance and minimize source inductance asymmetry; use Kelvin-source connections and symmetrical PCB routing per FET.

What is the typical reverse recovery charge (Q_rr) of the body diode, and under what conditions is it measured?

The typical Q_rr is 2.1 µC, measured at V_R = 400 V, I_F = 4.8 A, and dI_F/dt = 100 A/µs, per Table 9 in the datasheet. This value reflects stored charge during diode commutation and directly impacts turn-on loss when used in synchronous or totem-pole configurations.