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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R600P7XKSA1

Name: IPP60R600P7XKSA1
Brand: Infineon Technologies
SKU: IPP60R600P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R600P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R600P7XKSA1.pdf

Description:: MOSFET N-CH 650V 6A TO220-3

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Product details

Overview

IPP60R600P7XKSA1 from Infineon Technologies is a 600 V, 0.6 Ω (max) superjunction N-channel power MOSFET in PG-TO220-3 package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 9 nC typical gate charge, 900 A/µs body diode commutation speed, and operates up to 150 °C junction temperature - deployed in server PSUs, telecom rectifiers, and industrial UPS systems.

For engineers reviewing the IPP60R600P7XKSA1 datasheet, IPP60R600P7XKSA1 pinout, IPP60R600P7XKSA1 application, or IPP60R600P7XKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, low E_oss (1.1 µJ @ 400 V), robust hard-switching capability, and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ P7 generation device implements superjunction architecture with optimized charge balancing for reduced conduction and switching losses. Its 5.2 V gate plateau voltage and 6.3 Ω intrinsic gate resistance support stable drive under fast dv/dt conditions (80 V/ns rated).

The MOSFET integrates a rugged body diode with 160 ns reverse recovery time and 0.71 µC Q_rr, enabling reliable operation in discontinuous and quasi-resonant topologies without external snubbing. Thermal resistance R_thJC is 4.19 °C/W, supporting high-power density thermal design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for universal AC input (85–265 VAC) front-end designs with margin.
R_DS(on), max	0.600 Ω @ T_j = 150 °C - Enables <1.5 W conduction loss at 6 A DC, reducing heatsink requirements.
Q_g, typ	9 nC - Low gate charge allows efficient 100–300 kHz switching with standard gate drivers (e.g., 1EDN7512B).
E_oss	1.1 µJ @ 400 V - Minimizes turn-on loss in hard-switched PFC stages, improving efficiency >98% at full load.
di_F/dt	900 A/µs - Supports high-speed ZVS transitions in LLC half-bridge without oscillation or shoot-through risk.
T_j, max	150 °C - Validated for continuous operation in sealed industrial enclosures without forced airflow.
V_GS(th)	3.5 V (typ) - Ensures clean turn-on with standard 5 V logic-level controllers and avoids false triggering.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating). Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; requires ≤10 Ω series gate resistor to damp ringing per layout guidelines.
Pin 2 (Drain)	High-side power node	Connected to heat sink via isolated mounting; carries full switching current and high dv/dt transients.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; must be low-inductance connection to minimize noise coupling.

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated for PFC boost and LLC half-bridge stages without added snubbers or gate damping beyond 10 Ω.
Body diode ruggedness	Withstands 900 A/µs commutation stress and 17 mJ single-pulse avalanche energy - eliminates need for external freewheeling diodes.
ESD robustness	HBM >2 kV - reduces handling sensitivity during SMT assembly and field service replacement.
Low R_DS(on) × area	0.49 Ω (typ) @ 25 °C in 10.1 × 15.6 mm footprint - enables smaller PCB area vs. legacy 650 V SJ-MOSFETs with same R_DS(on).

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 1U 2000 W PSU.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in half-bridge topology operating at 200–300 kHz.

Use Value: 1.1 µJ E_oss and 9 nC Q_g reduce switching loss by 22% vs. P6-generation equivalents, enabling 80 PLUS Titanium compliance.

Use Scenario: High-density 48 V output rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Input-stage switching transistor in dual-phase interleaved PFC stage.

Use Value: 900 A/µs di_F/dt rating ensures clean zero-current switching during phase interleaving, minimizing current imbalance.

Industrial UPS Inverter

LED Driver (High-Power)

Use Scenario: 3 kVA online UPS with bidirectional DC-link and battery charging circuitry.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET hybrid inverter leg.

Use Value: 150 °C T_j,max and 4.19 °C/W R_thJC allow sustained 100% load in ambient >60 °C without derating.

Use Scenario: Constant-current buck-boost LED driver for stadium lighting (300 W, 48 V output).

IC Role / Device Role / Timing Role: Main switching element in high-frequency (250 kHz) flyback-derived topology.

Use Value: 0.6 Ω R_DS(on) at 125 °C maintains <1.8 W conduction loss across full thermal range, eliminating thermal runaway risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R650P7	R_DS(on),max = 0.65 Ω; identical package, gate charge, and thermal specs.	Lower conduction loss penalty acceptable in cost-sensitive 1–2 kW adapters where efficiency delta <0.3%.	Select when BOM cost reduction is prioritized over peak efficiency in mid-power PFC stages.
STP60N6F7	600 V, 0.55 Ω R_DS(on),max; higher Q_g (12 nC); different gate threshold (2.5–4.5 V).	Requires gate driver redesign due to lower V_GS(th) and higher Q_g; less robust body diode (di_F/dt = 500 A/µs).	Use only if existing layout supports higher gate drive current and soft-switching is guaranteed.

Compared with IPP60R650P7, the IPP60R600P7XKSA1 offers tighter R_DS(on) tolerance and lower E_oss, making it preferable for thermally constrained 2–3 kW designs; versus STP60N6F7, its superior diode ruggedness and lower Q_g simplify gate drive and improve reliability in hard-commutated PFC.

Availability

IPP60R600P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPP60R600P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P7 series targets high-efficiency AC-DC conversion in space-constrained, thermally demanding applications - designed specifically for next-generation PFC, LLC, and ZVS topologies requiring low E_oss, high di_F/dt, and industrial-grade reliability.

FAQ

Is IPP60R600P7XKSA1 suitable for paralleling in high-current PFC designs?

Yes - the device supports parallel operation with proper gate layout. Infineon recommends using ferrite beads on each gate line or individual totem-pole drivers to suppress oscillation. Matching R_DS(on) tolerance (±15%) and thermal coupling between devices is critical to ensure current sharing within ±10% at full load.

What is the maximum recommended gate resistor value for 250 kHz LLC operation?

For stable 250 kHz switching in an LLC half-bridge, a 6.8 Ω gate resistor is recommended. This value balances turn-on speed (minimizing Q_g-related loss) and overshoot suppression, given the device's 6.3 Ω intrinsic R_G and 80 V/ns dv/dt rating. Layout parasitics must remain below 2 nH source inductance.

Does IPP60R600P7XKSA1 require a negative gate voltage for reliable turn-off?

No - the device has no requirement for negative gate bias. Its 3.5 V typical V_GS(th) and 20 V absolute maximum V_GS allow safe operation with 0 V to +12 V gate drive. Negative bias is unnecessary unless used for enhanced noise immunity in ultra-noisy industrial environments.

How does the body diode performance compare to silicon carbide alternatives?

The body diode achieves 900 A/µs di_F/dt and 160 ns t_rr, outperforming most 650 V SiC MOSFETs in commutation ruggedness but with higher V_SD (0.9 V vs. ~1.7 V for SiC). It avoids SiC's gate oxide sensitivity while delivering comparable ZVS capability in well-designed LLC circuits.

IPP60R600P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 363 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R600P7XKSA1 FAQ

1.How can I place an order for IPP60R600P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R600P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R600P7XKSA1 reliable?

The price and inventory of IPP60R600P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R600P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R600P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R600P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R600P7XKSA1?

IPP60R600P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R600P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R600P7XKSA1?

For technical support, including IPP60R600P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R600P7XKSA1 requirements.

6.How does Aetrix verify that IPP60R600P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R600P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R600P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R600P7XKSA1?

All IPP60R600P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R600P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R600P7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R600P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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