Infineon Technologies IPP65R074C6XKSA1

Overview

IPP65R074C6XKSA1 from Infineon Technologies is a 650 V, 57.7 A (T_C = 25°C) superjunction N-channel power MOSFET in PG-TO220 package, optimized for hard-switching and resonant PFC/PWM stages. It delivers R_DS(on) = 0.074 Ω (max), Q_g = 138 nC (typ), E_oss = 10.8 µJ @ 400 V, and supports 151 A pulsed drain current - enabling high-efficiency, compact 1–3 kW server PSU and telecom rectifier designs.

For engineers reviewing the IPP65R074C6XKSA1 datasheet, IPP65R074C6XKSA1 pinout, IPP65R074C6XKSA1 application, or IPP65R074C6XKSA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), 300 A/µs body diode dI/dt capability, 50 V/ns dv/dt ruggedness, and JEDEC industrial-grade qualification - critical for reliable operation in high-reliability AC-DC front-end converters.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial layer doping to minimize conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) and plateau voltage (5.5 V) support standard 12 V gate drivers without level-shifting, while the low C_iss (3020 pF) and C_oss (170 pF) enable fast, controllable switching at 100–300 kHz.

The integrated body diode exhibits trr = 560 ns and Q_rr = 12 µC under 400 V reverse bias and 100 A/µs di/dt, enabling robust commutation in continuous-conduction-mode PFC. Thermal resistance R_thJC = 0.26 °C/W ensures efficient heat transfer to heatsinks in TO-220 mounting configurations.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, non-isolated, screw-mountable). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW65N60DM6 and IXTH60N65X2, IPP65R074C6XKSA1 offers balanced trade-offs: JEDEC industrial qualification up to 150°C, proven 300 A/µs diode commutation, and optimized FOM for mixed hard-/resonant-switching use - making it the default choice for telecom and server front-end designs requiring long-term reliability.

Availability

IPP65R074C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverter DC-DC stages requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IPP65R074C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ C6 series was engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial and communications infrastructure - emphasizing ruggedness, ease of drive, and predictable switching behavior across temperature and load.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG = 1.8 Ω for timing measurements, but practical design uses 5–15 Ω to balance switching speed and gate ringing. At 12 V drive, 10 Ω limits peak gate current to ~1.2 A and keeps turn-off delay within 60 ns - sufficient for 200 kHz operation while maintaining noise immunity in noisy PSU environments.

Is the drain tab electrically isolated from the package mount surface?

No - Pin 2 (Drain) is internally bonded to the metal tab, which serves as the primary thermal path. When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory if the heatsink is grounded or referenced to a different potential than the drain node.

Does this MOSFET require a negative gate turn-off voltage?

No - the device is fully compatible with 0 V to +12 V gate drive. Its V_GS(th) (2.5–3.5 V) and low Miller plateau (5.5 V) ensure clean turn-on with standard logic-level drivers; negative voltage is unnecessary and not specified in the absolute maximum ratings.

How does the body diode performance compare to discrete ultrafast diodes in PFC designs?

The integrated body diode achieves trr = 560 ns and Q_rr = 12 µC - comparable to 600 V ultrafast diodes like MUR1660CT. Its 300 A/µs dI/dt rating allows direct replacement without snubber redesign in CrCM boost, though discrete diodes may offer slightly lower V_F at high T_j.