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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R090CFD7XKSA1

Name: IPP65R090CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP65R090CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R090CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R090CFD7XKSA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP65R090CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET with 90 mΩ max R_DS(on), ultra-fast body diode (di_F/dt = 1300 A/µs), and optimized for zero-voltage switching in LLC and phase-shift full-bridge topologies. It delivers 107 A pulsed drain current, 7.4 µJ E_oss at 400 V, and operates up to 150 °C junction temperature - deployed in server power supplies, telecom rectifiers, and EV charging modules.

For engineers reviewing the IPP65R090CFD7XKSA1 datasheet, IPP65R090CFD7XKSA1 pinout, IPP65R090CFD7XKSA1 application, or IPP65R090CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, low R_DS(on) temperature coefficient, soft-switching E_oss performance, and PG-TO220-3 package thermal resistance of 0.98 °C/W.

Technical Context

This CoolMOS™ CFD7 device uses charge-compensation superjunction architecture with integrated fast-recovery body diode. Its gate plateau voltage is 5.7 V, total gate charge is 53 nC, and output capacitance is energy-related Co(er) = 92 pF - enabling precise timing control in resonant converters.

The MOSFET supports high dv/dt ruggedness (120 V/ns) and reverse diode dv/dt rating of 70 V/ns. Thermal design is enabled by validated junction-to-case resistance of 0.98 °C/W and JEDEC industrial qualification per JESD47.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - rated for 400 V bus operation with 1.6× safety margin in industrial SMPS
R_DS(on) max @ 150°C	90 mΩ - stable conduction loss across full operating temperature range
E_oss @ 400 V	7.4 µJ - enables efficient ZVS turn-on in LLC converters above 100 kHz
Q_g typ	53 nC - determines gate drive power and switching speed in high-frequency designs
di_F/dt max	1300 A/µs - ensures robust hard commutation without oscillation or failure
T_j max	150 °C - supports continuous operation in sealed telecom and server enclosures
R_thJC	0.98 °C/W - enables direct heatsink mounting with predictable thermal budget

Pinout & Package

Delivered in PG-TO220-3 package with isolated tab (Drain-connected), standard through-hole mounting, and 60 Ncm screw torque rating. The case serves as Drain terminal, enabling low-inductance high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	Control input requiring <53 nC charge; sensitive to ringing - needs local gate resistor and ferrite bead for paralleling
Pin 2 (Tab)	Drain	High-side switching node; electrically connected to metal tab - requires isolation from heatsink unless floating topology
Pin 3 (Lead)	Source	Reference return path for gate drive and current sensing; shared with internal body diode cathode

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs commutation rate enables reliable hard-switched transitions without snubbers
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25°C to 150°C - improves current sharing in parallel configurations
Reduced E_oss	7.4 µJ at 400 V - cuts turn-on losses by >30% vs. prior CFD2 generation in LLC phase-shift designs
JEDEC industrial qualification	Validated per JESD47 - guarantees reliability in 10+ year server and telecom deployments
Optimized for ZVS	Co(er) = 92 pF and Q_gd/Q_gs ratio support clean zero-voltage turn-on down to 50 kHz

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW CRPS-compliant AC-DC front-end using dual-phase LLC resonant converter.

IC Role / Device Role / Timing Role: Primary-side high-side switch in resonant half-bridge leg; handles 400 V bus with ZVS turn-on.

Use Value: 90 mΩ R_DS(on) and 7.4 µJ E_oss reduce conduction + switching losses by 12% versus CFD2, improving 230 V efficiency to 96.3%.

Use Scenario: -48 V distributed power system rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Isolation switch in secondary-side synchronous rectification stage; leverages fast body diode for freewheeling.

Use Value: 1300 A/µs di_F/dt prevents diode snap-off during transient load steps, eliminating voltage spikes >10 V.

EV DC Fast Charger

Solar String Inverter

Use Scenario: 20 kW modular PFC + DC-DC stage with interleaved totem-pole and phase-shift full-bridge.

IC Role / Device Role / Timing Role: High-side switch in phase-shift full-bridge output stage; operated with 100–200 ns dead time.

Use Value: 120 V/ns dv/dt ruggedness withstands bus transients during grid fault recovery without false triggering.

Use Scenario: 15 kW string inverter with two-level NPC topology and 1000 V PV input.

IC Role / Device Role / Timing Role: Low-side switch in NPC clamping leg; conducts 25 A continuous with body diode freewheeling.

Use Value: 1.0 V V_SD at 12.5 A reduces conduction loss in bidirectional clamping path by 28% vs. standard SJ MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R099C7	99 mΩ R_DS(on), 48 nC Q_g, same CFD7 platform	Lower switching loss but higher conduction loss - better for light-load-dominated telecom PSUs	Select when optimizing for standby efficiency over full-load thermal margin
IPW65R090CFD	Legacy CFD2 generation; 90 mΩ R_DS(on), 62 nC Q_g, 11.2 µJ E_oss	Higher E_oss limits usable frequency to ≤150 kHz in LLC; less robust di_F/dt	Acceptable for cost-sensitive industrial SMPS where 96% efficiency is sufficient

Compared with IPP65R099C7 and IPW65R090CFD, IPP65R090CFD7XKSA1 provides best-in-class balance of conduction loss, switching energy, and commutation hardness - making it optimal for high-density, high-reliability ZVS systems demanding >96% efficiency at 200 kHz.

Availability

IPP65R090CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV DC fast chargers requiring stable component supply, long lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPP65R090CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for single-device operation?

The datasheet specifies RG = 5.3 Ω for characterization, but practical designs use 10–22 Ω to dampen gate ringing while maintaining <100 ns turn-off delay. Values above 33 Ω increase switching losses disproportionately due to 53 nC Q_g; below 5 Ω risks overshoot and shoot-through in bridge configurations.

Can IPP65R090CFD7XKSA1 be paralleled, and what layout precautions apply?

Yes - Infineon explicitly qualifies this part for paralleling. Required measures include individual gate resistors (≥10 Ω), ferrite beads on each gate lead, symmetrical PCB routing, and separate source Kelvin connections to avoid current imbalance caused by common-source inductance.

How does its body diode performance compare to standard silicon MOSFETs in hard-commutation scenarios?

This device achieves 1300 A/µs di_F/dt - over 3× higher than typical 650 V SJ MOSFETs - due to optimized carrier lifetime control and tailored doping profile. That enables reliable operation in asymmetric half-bridge and totem-pole PFC without external SiC diodes or complex snubbers.

Is thermal derating required above 100°C case temperature?

Yes - power dissipation must be linearly derated above TC = 25°C using R_thJC = 0.98 °C/W. At TC = 100°C, maximum allowed P_tot drops to 78 W (vs. 127 W at 25°C); full derating curve is provided in Figure 1 of the datasheet, confirming safe operation up to T_j = 150°C.

IPP65R090CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2513 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 127W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R090CFD7XKSA1 FAQ

1.How can I place an order for IPP65R090CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R090CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R090CFD7XKSA1 reliable?

The price and inventory of IPP65R090CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R090CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R090CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R090CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R090CFD7XKSA1?

IPP65R090CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R090CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R090CFD7XKSA1?

For technical support, including IPP65R090CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R090CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP65R090CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R090CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R090CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R090CFD7XKSA1?

All IPP65R090CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R090CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R090CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R090CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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