Infineon Technologies IPP65R099C6XKSA1

Overview

IPP65R099C6XKSA1 from Infineon Technologies is a 650 V, 38 A (T_C = 25°C), 0.099 Ω R_DS(on) superjunction MOSFET in TO-220 package, optimized for high-efficiency PFC and hard-switching PWM stages in industrial SMPS, server power supplies, and telecom rectifiers.

For engineers reviewing the IPP65R099C6XKSA1 datasheet, IPP65R099C6XKSA1 pinout, IPP65R099C6XKSA1 application, or IPP65R099C6XKSA1 equivalent, key selection criteria include its 127 nC total gate charge, 10 µJ E_oss at 400 V, 300 A/µs body diode di/dt rating, and industrial-grade JEDEC qualification for stable operation up to 150°C junction temperature.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its 2.5–3.5 V gate threshold voltage and 5.5 V gate plateau support robust gate drive with standard 12 V controllers.

The MOSFET delivers 845 mJ single-pulse avalanche energy and withstands 50 V/ns dv/dt in MOSFET mode and 15 V/ns in reverse diode mode-critical for reliable operation in high-noise, fast-switching topologies like LLC resonant converters and active clamp forward designs.

Key Specifications

Pinout & Package

IPP65R099C6XKSA1 is housed in a TO-220 package (PG-TO220) with isolated mounting flange, rated for 278 W power dissipation at T_C = 25°C and thermal resistance R_thJC = 0.45 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R099C6, IPP65R099C6XKSA1 trades 0.05 °C/W higher R_thJC for lower assembly cost and smaller footprint, while IPP65R190C6 offers 45% lower gate drive demand at the expense of 91% higher conduction loss-making each suitable for distinct power density and thermal management priorities.

Availability

IPP65R099C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IPP65R099C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices since 1999.

The CoolMOS™ C6 product line was engineered to deliver best-in-class R_DS(on) × Q_g figure-of-merit for 600–650 V applications in industrial SMPS, renewable energy inverters, and high-density computing power supplies.

FAQ

What is the maximum recommended gate drive voltage for IPP65R099C6XKSA1?

The absolute maximum gate-source voltage is ±20 V for DC and ±30 V for AC (f > 1 Hz). For reliable operation, Infineon recommends 10–15 V gate drive with a series gate resistor to limit peak current and suppress oscillation. Exceeding 15 V does not improve R_DS(on) significantly but increases Miller charge injection risk during hard switching.

Does IPP65R099C6XKSA1 require a gate driver with negative turn-off capability?

No. The device's 3.5 V maximum gate threshold voltage and low 1.7 Ω internal gate resistance allow clean turn-off using standard 0 V to 12 V gate drivers. Negative turn-off is unnecessary unless operating in ultra-high dv/dt environments (>30 V/ns) with parasitic inductance >15 nH in the gate loop.

How does the body diode performance compare to discrete ultrafast diodes in PFC applications?

Its 615 ns reverse recovery time and 14.8 µC Q_rr are comparable to 600 V ultrafast diodes (e.g., STTH8R06D), but the integrated body diode eliminates layout parasitics and reduces component count. However, for critical zero-current switching PFC, an external SiC Schottky may still be preferred for <30 ns t_rr.

Can IPP65R099C6XKSA1 be used in synchronous rectification topologies?

No. It is a unidirectional N-channel enhancement-mode MOSFET designed for high-side or low-side switching-not bidirectional conduction. Synchronous rectification requires dedicated SR controllers and logic-level MOSFETs with optimized body diode characteristics and gate drive timing margins not provided here.